FR2315785A1 - Laser a injection comprenant une diode a heterostructure enterree - Google Patents

Laser a injection comprenant une diode a heterostructure enterree

Info

Publication number
FR2315785A1
FR2315785A1 FR7615955A FR7615955A FR2315785A1 FR 2315785 A1 FR2315785 A1 FR 2315785A1 FR 7615955 A FR7615955 A FR 7615955A FR 7615955 A FR7615955 A FR 7615955A FR 2315785 A1 FR2315785 A1 FR 2315785A1
Authority
FR
France
Prior art keywords
laser including
injection laser
buried heterostructure
heterostructure diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7615955A
Other languages
English (en)
French (fr)
Other versions
FR2315785B1 (nl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/589,277 external-priority patent/US4033796A/en
Priority claimed from US05/589,120 external-priority patent/US3978428A/en
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of FR2315785A1 publication Critical patent/FR2315785A1/fr
Application granted granted Critical
Publication of FR2315785B1 publication Critical patent/FR2315785B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
FR7615955A 1975-06-23 1976-05-26 Laser a injection comprenant une diode a heterostructure enterree Granted FR2315785A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/589,277 US4033796A (en) 1975-06-23 1975-06-23 Method of making buried-heterostructure diode injection laser
US05/589,120 US3978428A (en) 1975-06-23 1975-06-23 Buried-heterostructure diode injection laser

Publications (2)

Publication Number Publication Date
FR2315785A1 true FR2315785A1 (fr) 1977-01-21
FR2315785B1 FR2315785B1 (nl) 1983-03-25

Family

ID=27080453

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615955A Granted FR2315785A1 (fr) 1975-06-23 1976-05-26 Laser a injection comprenant une diode a heterostructure enterree

Country Status (7)

Country Link
JP (1) JPS523392A (nl)
AU (1) AU501061B2 (nl)
CA (1) CA1065460A (nl)
DE (1) DE2626775C2 (nl)
FR (1) FR2315785A1 (nl)
GB (1) GB1546729A (nl)
NL (1) NL7606798A (nl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2336797A1 (fr) * 1975-12-22 1977-07-22 Int Standard Electric Corp Methode de fabrication de guides d'ondes semi-conducteurs a heterojonctions
FR2529399A1 (fr) * 1982-06-29 1983-12-30 Int Standard Electric Corp Methode de fabrication d'un laser a injection

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234686A (en) * 1975-09-10 1977-03-16 Sumitomo Electric Ind Ltd Double hetero junction type semiconductor laser element and its manufa cturing process
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
DE2757470A1 (de) * 1977-12-22 1979-07-05 Siemens Ag Verfahren zum herstellen einer halbleiteranordnung
CA1127282A (en) * 1978-05-22 1982-07-06 Takashi Sugino Semiconductor laser and method of making the same
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
JPS55158691A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device manufacture thereof
JPS56161688A (en) * 1980-05-16 1981-12-12 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS5910039Y2 (ja) * 1980-03-18 1984-03-29 大日本印刷株式会社 商品展示函
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
JPS5763885A (en) * 1980-10-06 1982-04-17 Mitsubishi Electric Corp Semiconductor laser device
JPS5791574A (en) * 1980-11-28 1982-06-07 Nec Corp Light emitting diode
JPS5792880A (en) * 1980-12-02 1982-06-09 Toshiba Corp Light emitting diode
JPS57162484A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor luminous device
JPS58225683A (ja) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp 半導体レーザの製造方法
JPS599990A (ja) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp 半導体レ−ザの製造方法
JPS6042890A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 面発光形半導体レ−ザ及びその製造方法
JP2553580B2 (ja) * 1987-08-19 1996-11-13 三菱電機株式会社 半導体レ−ザ装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2147322A1 (nl) * 1971-07-29 1973-03-09 Licentia Gmbh
US3780358A (en) * 1970-10-13 1973-12-18 Int Standard Electric Corp Gallium arsenide lasers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2859178A (en) * 1955-12-19 1958-11-04 Exxon Research Engineering Co Method of lubricating bearings
JPS51114887A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780358A (en) * 1970-10-13 1973-12-18 Int Standard Electric Corp Gallium arsenide lasers
FR2147322A1 (nl) * 1971-07-29 1973-03-09 Licentia Gmbh

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV320/75 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2336797A1 (fr) * 1975-12-22 1977-07-22 Int Standard Electric Corp Methode de fabrication de guides d'ondes semi-conducteurs a heterojonctions
FR2529399A1 (fr) * 1982-06-29 1983-12-30 Int Standard Electric Corp Methode de fabrication d'un laser a injection

Also Published As

Publication number Publication date
DE2626775A1 (de) 1976-12-30
FR2315785B1 (nl) 1983-03-25
JPS523392A (en) 1977-01-11
DE2626775C2 (de) 1983-04-21
CA1065460A (en) 1979-10-30
JPS5653237B2 (nl) 1981-12-17
NL7606798A (nl) 1976-12-27
AU1521076A (en) 1978-01-05
GB1546729A (en) 1979-05-31
AU501061B2 (en) 1979-06-07

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Legal Events

Date Code Title Description
ST Notification of lapse