IT1124756B - Diodo a laser ad eterogiunzione - Google Patents

Diodo a laser ad eterogiunzione

Info

Publication number
IT1124756B
IT1124756B IT7624575A IT2457576A IT1124756B IT 1124756 B IT1124756 B IT 1124756B IT 7624575 A IT7624575 A IT 7624575A IT 2457576 A IT2457576 A IT 2457576A IT 1124756 B IT1124756 B IT 1124756B
Authority
IT
Italy
Prior art keywords
heterjunction
laser diode
diode
laser
heterjunction laser
Prior art date
Application number
IT7624575A
Other languages
English (en)
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of IT1124756B publication Critical patent/IT1124756B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
IT7624575A 1975-06-23 1976-06-22 Diodo a laser ad eterogiunzione IT1124756B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/589,277 US4033796A (en) 1975-06-23 1975-06-23 Method of making buried-heterostructure diode injection laser

Publications (1)

Publication Number Publication Date
IT1124756B true IT1124756B (it) 1986-05-14

Family

ID=24357341

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7624575A IT1124756B (it) 1975-06-23 1976-06-22 Diodo a laser ad eterogiunzione

Country Status (2)

Country Link
US (1) US4033796A (it)
IT (1) IT1124756B (it)

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US4099305A (en) * 1977-03-14 1978-07-11 Bell Telephone Laboratories, Incorporated Fabrication of mesa devices by MBE growth over channeled substrates
US4099999A (en) * 1977-06-13 1978-07-11 Xerox Corporation Method of making etched-striped substrate planar laser
DE2757470A1 (de) * 1977-12-22 1979-07-05 Siemens Ag Verfahren zum herstellen einer halbleiteranordnung
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser
CA1127282A (en) * 1978-05-22 1982-07-06 Takashi Sugino Semiconductor laser and method of making the same
JPS5522807A (en) * 1978-06-30 1980-02-18 Hitachi Ltd Semiconductor laser element and manufacturing of the same
DE3065856D1 (en) * 1979-02-13 1984-01-19 Fujitsu Ltd A semiconductor light emitting device
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
US4249967A (en) * 1979-12-26 1981-02-10 International Telephone And Telegraph Corporation Method of manufacturing a light-emitting diode by liquid phase epitaxy
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
DE3105786A1 (de) * 1981-02-17 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Herstellung von lumineszenz- oder laserdioden mit intern begrenzter leuchtflaeche
US4383320A (en) * 1981-04-27 1983-05-10 Rca Corporation Positive index lateral waveguide semiconductor laser
US4371968A (en) * 1981-07-01 1983-02-01 The United States Of America As Represented By The Secretary Of The Army Monolithic injection laser arrays formed by crystal regrowth techniques
GB2111743B (en) * 1981-08-25 1985-11-27 Handotai Kenkyu Shinkokai Semiconductor laser
JPS58176991A (ja) * 1982-04-09 1983-10-17 Sanyo Electric Co Ltd 半導体レ−ザ
US4479222A (en) * 1982-04-27 1984-10-23 The United States Of America As Represented By The Secretary Of The Air Force Diffusion barrier for long wavelength laser diodes
US4484332A (en) * 1982-06-02 1984-11-20 The United States Of America As Represented By The Secretary Of The Air Force Multiple double heterojunction buried laser device
US4509996A (en) * 1982-11-05 1985-04-09 International Standard Electric Corporation Injection laser manufacture
US4547396A (en) * 1983-06-17 1985-10-15 Rca Corporation Method of making a laser array
US4623427A (en) * 1983-08-12 1986-11-18 Hewlett-Packard Company Means and method for a self-aligned multilayer laser epitaxy structure device
JPS60102790A (ja) * 1983-11-09 1985-06-06 Mitsubishi Electric Corp 半導体発光装置の製造方法
JPS6129189A (ja) * 1984-07-19 1986-02-10 Sanyo Electric Co Ltd 半導体レ−ザ
JPS6174388A (ja) * 1984-09-19 1986-04-16 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
US4803691A (en) * 1985-05-07 1989-02-07 Spectra Diode Laboratories, Inc. Lateral superradiance suppressing diode laser bar
GB8618373D0 (en) * 1986-07-28 1986-09-03 British Telecomm Fabrication technique
US4888085A (en) * 1986-09-18 1989-12-19 Eastman Kodak Company Processes for their manufacture of monolithically integrated planar lasers differing in emission wavelengths
US4891093A (en) * 1986-09-18 1990-01-02 Eastman Kodak Company Processes for the manufacture of laser including monolithically integrated planar devices
US6577658B1 (en) * 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
EP3640009B1 (en) * 2017-06-14 2023-04-26 Kuraray Noritake Dental Inc. Container for optical stereoscopic shaping device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489613A (it) * 1965-08-19 1967-11-13
US3465159A (en) * 1966-06-27 1969-09-02 Us Army Light amplifying device
US3579055A (en) * 1968-08-05 1971-05-18 Bell & Howell Co Semiconductor laser device and method for it{3 s fabrication
US3764409A (en) * 1969-09-29 1973-10-09 Hitachi Ltd Method for fabricating a semiconductor component for a semiconductor circuit
JPS502235B1 (it) * 1970-09-07 1975-01-24
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
IT963303B (it) * 1971-07-29 1974-01-10 Licentia Gmbh Laser a semiconduttore
US3824493A (en) * 1972-09-05 1974-07-16 Bell Telephone Labor Inc Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror
US3865646A (en) * 1972-09-25 1975-02-11 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3893044A (en) * 1973-04-12 1975-07-01 Ibm Laser device having enclosed laser cavity
US3859178A (en) * 1974-01-17 1975-01-07 Bell Telephone Labor Inc Multiple anodization scheme for producing gaas layers of nonuniform thickness

Also Published As

Publication number Publication date
US4033796A (en) 1977-07-05

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