FR2309980A1 - Dispositif semi-conducteur ht a tension de claquage collecteur-base elevee et procede de fabrication - Google Patents

Dispositif semi-conducteur ht a tension de claquage collecteur-base elevee et procede de fabrication

Info

Publication number
FR2309980A1
FR2309980A1 FR7612536A FR7612536A FR2309980A1 FR 2309980 A1 FR2309980 A1 FR 2309980A1 FR 7612536 A FR7612536 A FR 7612536A FR 7612536 A FR7612536 A FR 7612536A FR 2309980 A1 FR2309980 A1 FR 2309980A1
Authority
FR
France
Prior art keywords
semiconductor
manufacturing process
breakdown voltage
high collector
base breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7612536A
Other languages
English (en)
French (fr)
Other versions
FR2309980B1 (cg-RX-API-DMAC10.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2309980A1 publication Critical patent/FR2309980A1/fr
Application granted granted Critical
Publication of FR2309980B1 publication Critical patent/FR2309980B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR7612536A 1975-04-28 1976-04-28 Dispositif semi-conducteur ht a tension de claquage collecteur-base elevee et procede de fabrication Granted FR2309980A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7504990,A NL185484C (nl) 1975-04-28 1975-04-28 Halfgeleiderinrichting met een halfgeleiderlichaam bevattende tenminste een transistor.

Publications (2)

Publication Number Publication Date
FR2309980A1 true FR2309980A1 (fr) 1976-11-26
FR2309980B1 FR2309980B1 (cg-RX-API-DMAC10.html) 1981-09-18

Family

ID=19823659

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7612536A Granted FR2309980A1 (fr) 1975-04-28 1976-04-28 Dispositif semi-conducteur ht a tension de claquage collecteur-base elevee et procede de fabrication

Country Status (11)

Country Link
JP (1) JPS51139782A (cg-RX-API-DMAC10.html)
AU (1) AU497831B2 (cg-RX-API-DMAC10.html)
BE (1) BE841135A (cg-RX-API-DMAC10.html)
CA (1) CA1057412A (cg-RX-API-DMAC10.html)
CH (1) CH600572A5 (cg-RX-API-DMAC10.html)
DE (1) DE2616925C2 (cg-RX-API-DMAC10.html)
FR (1) FR2309980A1 (cg-RX-API-DMAC10.html)
GB (1) GB1541067A (cg-RX-API-DMAC10.html)
IT (1) IT1064230B (cg-RX-API-DMAC10.html)
NL (1) NL185484C (cg-RX-API-DMAC10.html)
SE (1) SE414095B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0286117A1 (en) * 1987-04-10 1988-10-12 Sony Corporation Bipolar Transistor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3030564A1 (de) * 1980-08-13 1982-03-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement fuer hohe sperrspannungen
DE4119904A1 (de) * 1991-06-17 1992-12-24 Telefunken Electronic Gmbh Halbleiteranordnung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439417B2 (de) * 1964-07-21 1976-09-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer halbleiteranordnung
US3442723A (en) * 1964-12-30 1969-05-06 Sony Corp Method of making a semiconductor junction by diffusion
US3772577A (en) * 1972-02-10 1973-11-13 Texas Instruments Inc Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same
JPS5026477A (cg-RX-API-DMAC10.html) * 1973-07-09 1975-03-19

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0286117A1 (en) * 1987-04-10 1988-10-12 Sony Corporation Bipolar Transistor
US4984053A (en) * 1987-04-10 1991-01-08 Sony Corporation Bipolar transistor with reduced parasitic capacitance

Also Published As

Publication number Publication date
BE841135A (fr) 1976-10-26
NL7504990A (nl) 1976-11-01
SE7601693L (sv) 1976-10-29
DE2616925C2 (de) 1983-04-14
IT1064230B (it) 1985-02-18
NL185484B (nl) 1989-11-16
AU497831B2 (en) 1979-01-11
SE414095B (sv) 1980-07-07
DE2616925A1 (de) 1976-11-11
CA1057412A (en) 1979-06-26
GB1541067A (en) 1979-02-21
NL185484C (nl) 1990-04-17
JPS5724933B2 (cg-RX-API-DMAC10.html) 1982-05-26
FR2309980B1 (cg-RX-API-DMAC10.html) 1981-09-18
AU1333676A (en) 1977-11-03
CH600572A5 (cg-RX-API-DMAC10.html) 1978-06-15
JPS51139782A (en) 1976-12-02

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Legal Events

Date Code Title Description
ST Notification of lapse