FR2309980A1 - SEMICONDUCTOR HT DEVICE WITH HIGH COLLECTOR-BASE BREAKDOWN VOLTAGE AND MANUFACTURING PROCESS - Google Patents

SEMICONDUCTOR HT DEVICE WITH HIGH COLLECTOR-BASE BREAKDOWN VOLTAGE AND MANUFACTURING PROCESS

Info

Publication number
FR2309980A1
FR2309980A1 FR7612536A FR7612536A FR2309980A1 FR 2309980 A1 FR2309980 A1 FR 2309980A1 FR 7612536 A FR7612536 A FR 7612536A FR 7612536 A FR7612536 A FR 7612536A FR 2309980 A1 FR2309980 A1 FR 2309980A1
Authority
FR
France
Prior art keywords
semiconductor
manufacturing process
breakdown voltage
high collector
base breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7612536A
Other languages
French (fr)
Other versions
FR2309980B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2309980A1 publication Critical patent/FR2309980A1/en
Application granted granted Critical
Publication of FR2309980B1 publication Critical patent/FR2309980B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
FR7612536A 1975-04-28 1976-04-28 SEMICONDUCTOR HT DEVICE WITH HIGH COLLECTOR-BASE BREAKDOWN VOLTAGE AND MANUFACTURING PROCESS Granted FR2309980A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7504990,A NL185484C (en) 1975-04-28 1975-04-28 SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST A TRANSISTOR.

Publications (2)

Publication Number Publication Date
FR2309980A1 true FR2309980A1 (en) 1976-11-26
FR2309980B1 FR2309980B1 (en) 1981-09-18

Family

ID=19823659

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7612536A Granted FR2309980A1 (en) 1975-04-28 1976-04-28 SEMICONDUCTOR HT DEVICE WITH HIGH COLLECTOR-BASE BREAKDOWN VOLTAGE AND MANUFACTURING PROCESS

Country Status (11)

Country Link
JP (1) JPS51139782A (en)
AU (1) AU497831B2 (en)
BE (1) BE841135A (en)
CA (1) CA1057412A (en)
CH (1) CH600572A5 (en)
DE (1) DE2616925C2 (en)
FR (1) FR2309980A1 (en)
GB (1) GB1541067A (en)
IT (1) IT1064230B (en)
NL (1) NL185484C (en)
SE (1) SE414095B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0286117A1 (en) * 1987-04-10 1988-10-12 Sony Corporation Bipolar Transistor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3030564A1 (en) * 1980-08-13 1982-03-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Semiconductor device for high inverse voltages - with outer layer of pn junction enclosed by peripheral zone
DE4119904A1 (en) * 1991-06-17 1992-12-24 Telefunken Electronic Gmbh SEMICONDUCTOR ARRANGEMENT

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439417B2 (en) * 1964-07-21 1976-09-23 Siemens AG, 1000 Berlin und 8000 München METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT
US3442723A (en) * 1964-12-30 1969-05-06 Sony Corp Method of making a semiconductor junction by diffusion
US3772577A (en) * 1972-02-10 1973-11-13 Texas Instruments Inc Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same
JPS5026477A (en) * 1973-07-09 1975-03-19

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0286117A1 (en) * 1987-04-10 1988-10-12 Sony Corporation Bipolar Transistor
US4984053A (en) * 1987-04-10 1991-01-08 Sony Corporation Bipolar transistor with reduced parasitic capacitance

Also Published As

Publication number Publication date
SE414095B (en) 1980-07-07
DE2616925C2 (en) 1983-04-14
AU497831B2 (en) 1979-01-11
JPS5724933B2 (en) 1982-05-26
CA1057412A (en) 1979-06-26
IT1064230B (en) 1985-02-18
SE7601693L (en) 1976-10-29
AU1333676A (en) 1977-11-03
BE841135A (en) 1976-10-26
CH600572A5 (en) 1978-06-15
FR2309980B1 (en) 1981-09-18
DE2616925A1 (en) 1976-11-11
NL7504990A (en) 1976-11-01
JPS51139782A (en) 1976-12-02
NL185484C (en) 1990-04-17
GB1541067A (en) 1979-02-21
NL185484B (en) 1989-11-16

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Legal Events

Date Code Title Description
ST Notification of lapse