FR2303382A1 - Monolithic integrated semiconductor circuit - uses electron flux reduction from substrate to epitaxial tank resulting in current flow reduction - Google Patents

Monolithic integrated semiconductor circuit - uses electron flux reduction from substrate to epitaxial tank resulting in current flow reduction

Info

Publication number
FR2303382A1
FR2303382A1 FR7606262A FR7606262A FR2303382A1 FR 2303382 A1 FR2303382 A1 FR 2303382A1 FR 7606262 A FR7606262 A FR 7606262A FR 7606262 A FR7606262 A FR 7606262A FR 2303382 A1 FR2303382 A1 FR 2303382A1
Authority
FR
France
Prior art keywords
substrate
reduction
current flow
electron flux
semiconductor circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7606262A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of FR2303382A1 publication Critical patent/FR2303382A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The integrated circuit has a substrate of semiconductor material with an epitaxial layer of opposite conductivity and insulating strips of the substrate conductivity which are provided in the epitaxial layer to form several tanks, in the first of which is provided a first circuit. Between the material of the tank and its surrounding insulating strip is formed a locking diode. The second tank contains an output circuit coupled to the first one. Arrangement for reducing the electron flux from the substrate (23) into the second tank (27), and thus of the resulting current flow in the output circuit (A), contains a third epitaxial tank (36, 42) between the first two tanks (26, 27).
FR7606262A 1975-03-07 1976-03-05 Monolithic integrated semiconductor circuit - uses electron flux reduction from substrate to epitaxial tank resulting in current flow reduction Withdrawn FR2303382A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55627675A 1975-03-07 1975-03-07

Publications (1)

Publication Number Publication Date
FR2303382A1 true FR2303382A1 (en) 1976-10-01

Family

ID=24220654

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7606262A Withdrawn FR2303382A1 (en) 1975-03-07 1976-03-05 Monolithic integrated semiconductor circuit - uses electron flux reduction from substrate to epitaxial tank resulting in current flow reduction

Country Status (3)

Country Link
JP (1) JPS51115783A (en)
DE (1) DE2609700A1 (en)
FR (1) FR2303382A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008106A1 (en) * 1978-08-08 1980-02-20 Siemens Aktiengesellschaft Semiconductor device with a plurality of semiconductor elements comprising pn junctions combined in a semiconductor crystal and forming an integrated circuit
EP0040125A1 (en) * 1980-05-14 1981-11-18 Thomson-Csf Protection device against parasitic currents in integrated circuits
EP0478793A1 (en) * 1990-04-13 1992-04-08 Kabushiki Kaisha Toshiba Substrate structure of a semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008106A1 (en) * 1978-08-08 1980-02-20 Siemens Aktiengesellschaft Semiconductor device with a plurality of semiconductor elements comprising pn junctions combined in a semiconductor crystal and forming an integrated circuit
EP0040125A1 (en) * 1980-05-14 1981-11-18 Thomson-Csf Protection device against parasitic currents in integrated circuits
FR2492165A1 (en) * 1980-05-14 1982-04-16 Thomson Csf DEVICE FOR PROTECTION AGAINST LEAKAGE CURRENTS IN INTEGRATED CIRCUITS
EP0040125B1 (en) 1980-05-14 1983-11-30 Thomson-Csf Protection device against parasitic currents in integrated circuits
US4466011A (en) * 1980-05-14 1984-08-14 Thomson-Csf Device for protection against leakage currents in integrated circuits
EP0478793A1 (en) * 1990-04-13 1992-04-08 Kabushiki Kaisha Toshiba Substrate structure of a semiconductor device
EP0478793A4 (en) * 1990-04-13 1995-06-28 Tokyo Shibaura Electric Co
US6104233A (en) * 1990-04-13 2000-08-15 Kabushiki Kaisha Toshiba Substrate structure of semi-conductor device

Also Published As

Publication number Publication date
DE2609700A1 (en) 1976-09-16
JPS51115783A (en) 1976-10-12

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Legal Events

Date Code Title Description
ST Notification of lapse