FR2275888A1 - Structure a transistors a effet de champ complementaires a porte isolee et procede pour sa fabrication - Google Patents

Structure a transistors a effet de champ complementaires a porte isolee et procede pour sa fabrication

Info

Publication number
FR2275888A1
FR2275888A1 FR7516972A FR7516972A FR2275888A1 FR 2275888 A1 FR2275888 A1 FR 2275888A1 FR 7516972 A FR7516972 A FR 7516972A FR 7516972 A FR7516972 A FR 7516972A FR 2275888 A1 FR2275888 A1 FR 2275888A1
Authority
FR
France
Prior art keywords
manufacturing
effect transistor
transistor structure
insulated door
complementary field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7516972A
Other languages
English (en)
French (fr)
Other versions
FR2275888B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of FR2275888A1 publication Critical patent/FR2275888A1/fr
Application granted granted Critical
Publication of FR2275888B1 publication Critical patent/FR2275888B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H01L21/76218—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers introducing both types of electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers, e.g. for isolation of complementary doped regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR7516972A 1974-06-03 1975-05-30 Structure a transistors a effet de champ complementaires a porte isolee et procede pour sa fabrication Granted FR2275888A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47535874A 1974-06-03 1974-06-03

Publications (2)

Publication Number Publication Date
FR2275888A1 true FR2275888A1 (fr) 1976-01-16
FR2275888B1 FR2275888B1 (de) 1981-08-21

Family

ID=23887225

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7516972A Granted FR2275888A1 (fr) 1974-06-03 1975-05-30 Structure a transistors a effet de champ complementaires a porte isolee et procede pour sa fabrication

Country Status (8)

Country Link
JP (1) JPS5619746B2 (de)
CA (1) CA1017073A (de)
DE (1) DE2523379C2 (de)
FR (1) FR2275888A1 (de)
GB (1) GB1499548A (de)
HK (1) HK27981A (de)
IT (1) IT1032951B (de)
NL (1) NL185591C (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0028786A1 (de) * 1979-11-13 1981-05-20 Deutsche ITT Industries GmbH Ionenimplantationsverfahren
EP0063578A1 (de) * 1980-10-20 1982-11-03 Ncr Co Verfahren zur bildung eines integrierten kreises mit polysilikon-türen.

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160466A (en) * 1974-11-22 1976-05-26 Hitachi Ltd Handotaisochino seizohoho
JPS5286083A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
JPS5955054A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置の製造方法
JPH0636425B2 (ja) * 1983-02-23 1994-05-11 テキサス インスツルメンツ インコ−ポレイテツド Ｃｍｏｓ装置の製造方法
EP0123384A1 (de) * 1983-02-25 1984-10-31 Western Digital Corporation Struktur eines integrierten komplementären Feldeffektstromkreises mit isolierten Toren und Verfahren zur Herstellung dieser Struktur
JP2572653B2 (ja) * 1989-12-29 1997-01-16 セイコーエプソン株式会社 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1104070B (de) * 1959-01-27 1961-04-06 Siemens Ag Verfahren zur Herstellung einer eine eigenleitende oder nahezu eigenleitende Zone aufweisenden Halbleitertriode
US3356858A (en) * 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
US3648225A (en) * 1969-12-04 1972-03-07 Sperry Rand Corp Digital sonar doppler navigator
NL160988C (nl) * 1971-06-08 1979-12-17 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting.
JPS49123287A (de) * 1973-03-28 1974-11-26

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0028786A1 (de) * 1979-11-13 1981-05-20 Deutsche ITT Industries GmbH Ionenimplantationsverfahren
EP0063578A1 (de) * 1980-10-20 1982-11-03 Ncr Co Verfahren zur bildung eines integrierten kreises mit polysilikon-türen.
EP0063578A4 (de) * 1980-10-20 1984-07-06 Ncr Corp Verfahren zur bildung eines integrierten kreises mit polysilikon-türen.

Also Published As

Publication number Publication date
JPS515969A (de) 1976-01-19
JPS5619746B2 (de) 1981-05-09
GB1499548A (en) 1978-02-01
IT1032951B (it) 1979-06-20
FR2275888B1 (de) 1981-08-21
CA1017073A (en) 1977-09-06
DE2523379A1 (de) 1975-12-11
DE2523379C2 (de) 1986-10-02
NL7506288A (nl) 1975-12-05
NL185591C (nl) 1990-05-16
HK27981A (en) 1981-07-03

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