BE860064A - Transistor microminiature a effet de champ et a arseniure de gallium et son procede de realisation - Google Patents
Transistor microminiature a effet de champ et a arseniure de gallium et son procede de realisationInfo
- Publication number
- BE860064A BE860064A BE182016A BE182016A BE860064A BE 860064 A BE860064 A BE 860064A BE 182016 A BE182016 A BE 182016A BE 182016 A BE182016 A BE 182016A BE 860064 A BE860064 A BE 860064A
- Authority
- BE
- Belgium
- Prior art keywords
- microminiature
- transistor
- effect
- field
- gallium arsenide
- Prior art date
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/736,731 US4104672A (en) | 1976-10-29 | 1976-10-29 | High power gallium arsenide schottky barrier field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
BE860064A true BE860064A (fr) | 1978-02-15 |
Family
ID=24961079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE182016A BE860064A (fr) | 1976-10-29 | 1977-10-25 | Transistor microminiature a effet de champ et a arseniure de gallium et son procede de realisation |
Country Status (11)
Country | Link |
---|---|
US (1) | US4104672A (fr) |
JP (1) | JPS592384B2 (fr) |
BE (1) | BE860064A (fr) |
CA (1) | CA1092254A (fr) |
DE (1) | DE2748103C3 (fr) |
ES (1) | ES463648A1 (fr) |
FR (1) | FR2369689A1 (fr) |
GB (1) | GB1573775A (fr) |
IT (1) | IT1091703B (fr) |
NL (1) | NL7711887A (fr) |
SE (1) | SE7711676L (fr) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4202003A (en) * | 1978-04-21 | 1980-05-06 | Texas Instruments Incorporated | MESFET Semiconductor device and method of making |
US4201997A (en) * | 1978-04-21 | 1980-05-06 | Texas Instruments Incorporated | MESFET semiconductor device and method of making |
US4202001A (en) * | 1978-05-05 | 1980-05-06 | Rca Corporation | Semiconductor device having grid for plating contacts |
GB1601059A (en) * | 1978-05-31 | 1981-10-21 | Secr Defence | Fet devices and their fabrication |
FR2431768A1 (fr) * | 1978-07-20 | 1980-02-15 | Labo Electronique Physique | Perfectionnement au procede de fabrication de dispositifs semi-conducteurs par auto-alignement et dispositifs obtenus |
US4266333A (en) * | 1979-04-27 | 1981-05-12 | Rca Corporation | Method of making a Schottky barrier field effect transistor |
JPS566476A (en) * | 1979-06-28 | 1981-01-23 | Nec Corp | Ultrahigh frequency field effect transistor |
FR2461358A1 (fr) * | 1979-07-06 | 1981-01-30 | Thomson Csf | Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede |
JPS5696657U (fr) * | 1979-12-21 | 1981-07-31 | ||
ATE56107T1 (de) * | 1980-11-17 | 1990-09-15 | Ball Corp | Integrierter monolithischer mikrowellenschaltkreis mit integraler antennenanordnung. |
US4380022A (en) * | 1980-12-09 | 1983-04-12 | The United States Of America As Represented By The Secretary Of The Navy | Monolithic fully integrated class B push-pull microwave GaAs MESFET with differential inputs and outputs with reduced Miller effect |
CA1200017A (fr) * | 1981-12-04 | 1986-01-28 | Ho C. Huang | Transistor a effet de champ micro-ondes |
JPS58100462A (ja) * | 1981-12-10 | 1983-06-15 | Fujitsu Ltd | 電界効果形トランジスタ |
US4583107A (en) * | 1983-08-15 | 1986-04-15 | Westinghouse Electric Corp. | Castellated gate field effect transistor |
US4495431A (en) * | 1983-08-22 | 1985-01-22 | United Technologies Corporation | Low reflectivity surface-mounted electrodes on semiconductive saw devices |
FR2558647B1 (fr) * | 1984-01-23 | 1986-05-09 | Labo Electronique Physique | Transistor a effet de champ de type schottky pour applications hyperfrequences et procede de realisation permettant d'obtenir un tel transistor |
JPH0682686B2 (ja) * | 1987-03-20 | 1994-10-19 | 日本ビクター株式会社 | 電界効果トランジスタ |
US4899201A (en) * | 1987-08-14 | 1990-02-06 | Regents Of The University Of Minnesota | Electronic and optoelectric devices utilizing light hole properties |
US4947062A (en) * | 1988-05-19 | 1990-08-07 | Adams Russell Electronics Co., Inc. | Double balanced mixing |
JPH04171734A (ja) * | 1990-11-02 | 1992-06-18 | Mitsubishi Electric Corp | 半導体装置 |
JPH04252036A (ja) * | 1991-01-10 | 1992-09-08 | Fujitsu Ltd | 半導体装置 |
JP2580966B2 (ja) * | 1993-08-05 | 1997-02-12 | 日本電気株式会社 | 半導体装置 |
US5698870A (en) * | 1996-07-22 | 1997-12-16 | The United States Of America As Represented By The Secretary Of The Air Force | High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal |
JP3499103B2 (ja) * | 1997-02-21 | 2004-02-23 | 三菱電機株式会社 | 半導体装置 |
US6127272A (en) * | 1998-01-26 | 2000-10-03 | Motorola, Inc. | Method of electron beam lithography on very high resistivity substrates |
IT1392321B1 (it) * | 2008-12-15 | 2012-02-24 | St Microelectronics Srl | Sistema sensore/attuatore interamente in materiale organico |
US11929408B2 (en) * | 2020-05-14 | 2024-03-12 | Macom Technology Solutions Holdings, Inc. | Layout techniques and optimization for power transistors |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2120388A1 (de) * | 1970-04-28 | 1971-12-16 | Agency Ind Science Techn | Verbindungshalbleitervorrichtung |
US3737743A (en) * | 1971-12-23 | 1973-06-05 | Gen Electric | High power microwave field effect transistor |
US3855613A (en) * | 1973-06-22 | 1974-12-17 | Rca Corp | A solid state switch using an improved junction field effect transistor |
JPS5631751B2 (fr) * | 1973-08-28 | 1981-07-23 | ||
US3969745A (en) * | 1974-09-18 | 1976-07-13 | Texas Instruments Incorporated | Interconnection in multi element planar structures |
US4016643A (en) * | 1974-10-29 | 1977-04-12 | Raytheon Company | Overlay metallization field effect transistor |
US4015278A (en) * | 1974-11-26 | 1977-03-29 | Fujitsu Ltd. | Field effect semiconductor device |
US3988619A (en) * | 1974-12-27 | 1976-10-26 | International Business Machines Corporation | Random access solid-state image sensor with non-destructive read-out |
-
1976
- 1976-10-29 US US05/736,731 patent/US4104672A/en not_active Expired - Lifetime
-
1977
- 1977-10-06 CA CA288,254A patent/CA1092254A/fr not_active Expired
- 1977-10-17 SE SE7711676A patent/SE7711676L/ not_active Application Discontinuation
- 1977-10-24 FR FR7731920A patent/FR2369689A1/fr active Granted
- 1977-10-25 BE BE182016A patent/BE860064A/fr unknown
- 1977-10-27 DE DE2748103A patent/DE2748103C3/de not_active Expired
- 1977-10-28 NL NL7711887A patent/NL7711887A/xx not_active Application Discontinuation
- 1977-10-28 GB GB44939/77A patent/GB1573775A/en not_active Expired
- 1977-10-28 ES ES463648A patent/ES463648A1/es not_active Expired
- 1977-10-28 IT IT69428/77A patent/IT1091703B/it active
- 1977-10-29 JP JP52129253A patent/JPS592384B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE7711676L (sv) | 1978-04-30 |
FR2369689A1 (fr) | 1978-05-26 |
DE2748103B2 (de) | 1980-09-18 |
DE2748103A1 (de) | 1978-05-11 |
JPS5356978A (en) | 1978-05-23 |
IT1091703B (it) | 1985-07-06 |
ES463648A1 (es) | 1978-07-16 |
CA1092254A (fr) | 1980-12-23 |
NL7711887A (nl) | 1978-05-03 |
JPS592384B2 (ja) | 1984-01-18 |
DE2748103C3 (de) | 1981-05-14 |
US4104672A (en) | 1978-08-01 |
FR2369689B1 (fr) | 1982-04-09 |
GB1573775A (en) | 1980-08-28 |
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