JPS52122471A - Schottky barier semiconductor device - Google Patents

Schottky barier semiconductor device

Info

Publication number
JPS52122471A
JPS52122471A JP2974177A JP2974177A JPS52122471A JP S52122471 A JPS52122471 A JP S52122471A JP 2974177 A JP2974177 A JP 2974177A JP 2974177 A JP2974177 A JP 2974177A JP S52122471 A JPS52122471 A JP S52122471A
Authority
JP
Japan
Prior art keywords
barier
schottky
semiconductor device
semiconductor
schottky barier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2974177A
Other languages
Japanese (ja)
Other versions
JPS616556B2 (en
Inventor
Emiru Kaaruson Deebitsudo
Rooman Uronsuki Kurisutofua
Robaato Toriano J Arufuretsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/710,186 external-priority patent/US4142195A/en
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS52122471A publication Critical patent/JPS52122471A/en
Publication of JPS616556B2 publication Critical patent/JPS616556B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
JP2974177A 1976-03-22 1977-03-16 Schottky barier semiconductor device Granted JPS52122471A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66890876A 1976-03-22 1976-03-22
US05/710,186 US4142195A (en) 1976-03-22 1976-07-30 Schottky barrier semiconductor device and method of making same

Publications (2)

Publication Number Publication Date
JPS52122471A true JPS52122471A (en) 1977-10-14
JPS616556B2 JPS616556B2 (en) 1986-02-27

Family

ID=27100017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2974177A Granted JPS52122471A (en) 1976-03-22 1977-03-16 Schottky barier semiconductor device

Country Status (6)

Country Link
JP (1) JPS52122471A (en)
CA (1) CA1078078A (en)
DE (1) DE2711365A1 (en)
FR (1) FR2345810A1 (en)
GB (1) GB1572846A (en)
HK (1) HK72084A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145537A (en) * 1978-05-04 1979-11-13 Canon Inc Preparation of electrophotographic image forming material
JPS5645083A (en) * 1979-07-16 1981-04-24 Rca Corp Improving amorphous silicon film conductivity
JPS5728368A (en) * 1980-07-28 1982-02-16 Hitachi Ltd Manufacture of semiconductor film
JPS604273A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPS604274A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPS6088955A (en) * 1983-10-21 1985-05-18 Stanley Electric Co Ltd Plasma cvd device
JPS62142374A (en) * 1986-11-29 1987-06-25 Shunpei Yamazaki Manufacture of photoelectric conversion semiconductor device
JPH05251340A (en) * 1991-06-28 1993-09-28 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH077168A (en) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd Photoeletcric conversion semiconductor device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394173A1 (en) * 1977-06-06 1979-01-05 Thomson Csf METHOD OF MANUFACTURING ELECTRONIC DEVICES WHICH INCLUDE A THIN LAYER OF AMORPHIC SILICON AND AN ELECTRONIC DEVICE OBTAINED BY SUCH A PROCESS
CA1123525A (en) * 1977-10-12 1982-05-11 Stanford R. Ovshinsky High temperature amorphous semiconductor member and method of making same
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
DE2836911C2 (en) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivation layer for semiconductor components
DE2904171A1 (en) * 1979-02-05 1980-08-14 Siemens Ag METHOD FOR PRODUCING SEMICONDUCTOR BODIES MADE OF AMORPHOUS SILICON BY GLIMMER DISCHARGE
US4200473A (en) * 1979-03-12 1980-04-29 Rca Corporation Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
AU535443B2 (en) * 1979-03-20 1984-03-22 Sanyo Electric Co., Ltd. Sunlight into energy conversion apparatus
FR2462782A1 (en) * 1979-08-03 1981-02-13 Thomson Csf PROCESS FOR PRODUCING A LAYER CONTAINING SILICON AND PHOTOELECTRIC CONVERSION DEVICE USING THE SAME
FR2463508A1 (en) * 1979-08-16 1981-02-20 Anvar Ohmic contact mfr. on hydrogenated amorphous silicon - using intermediate layer starved of hydrogen
DE2946108C2 (en) * 1979-11-15 1985-02-14 Koch & Sterzel Gmbh & Co, 4300 Essen Radiation detector
US4412900A (en) * 1981-03-13 1983-11-01 Hitachi, Ltd. Method of manufacturing photosensors

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
AMORPHOUS AND LIGVID SEMICONDVCTORS=1974 *
APPLIED PHYSICS LETTERS=1976 *
JOURNAL OF APPLIED PHYSICS=1974 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212509B2 (en) * 1978-05-04 1987-03-19 Canon Kk
JPS54145537A (en) * 1978-05-04 1979-11-13 Canon Inc Preparation of electrophotographic image forming material
JPH0131315B2 (en) * 1979-07-16 1989-06-26 Rca Corp
JPS5645083A (en) * 1979-07-16 1981-04-24 Rca Corp Improving amorphous silicon film conductivity
JPS5728368A (en) * 1980-07-28 1982-02-16 Hitachi Ltd Manufacture of semiconductor film
JPH0234192B2 (en) * 1980-07-28 1990-08-01 Hitachi Ltd
JPS604273A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPS604274A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPH0473312B2 (en) * 1983-06-22 1992-11-20 Tokyo Shibaura Electric Co
JPH0473311B2 (en) * 1983-06-22 1992-11-20 Tokyo Shibaura Electric Co
JPS6088955A (en) * 1983-10-21 1985-05-18 Stanley Electric Co Ltd Plasma cvd device
JPH0114998B2 (en) * 1983-10-21 1989-03-15 Stanley Electric Co Ltd
JPS62142374A (en) * 1986-11-29 1987-06-25 Shunpei Yamazaki Manufacture of photoelectric conversion semiconductor device
JPH05251340A (en) * 1991-06-28 1993-09-28 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH077168A (en) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd Photoeletcric conversion semiconductor device

Also Published As

Publication number Publication date
DE2711365A1 (en) 1977-09-29
JPS616556B2 (en) 1986-02-27
FR2345810B1 (en) 1982-04-09
DE2711365C2 (en) 1988-09-01
GB1572846A (en) 1980-08-06
FR2345810A1 (en) 1977-10-21
HK72084A (en) 1984-09-28
CA1078078A (en) 1980-05-20

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