HK72084A - A schottky barrier semiconductor device and method of making same - Google Patents

A schottky barrier semiconductor device and method of making same

Info

Publication number
HK72084A
HK72084A HK720/84A HK72084A HK72084A HK 72084 A HK72084 A HK 72084A HK 720/84 A HK720/84 A HK 720/84A HK 72084 A HK72084 A HK 72084A HK 72084 A HK72084 A HK 72084A
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
schottky barrier
making same
barrier semiconductor
making
Prior art date
Application number
HK720/84A
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/710,186 external-priority patent/US4142195A/en
Application filed by Rca Corp filed Critical Rca Corp
Publication of HK72084A publication Critical patent/HK72084A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Electrodes Of Semiconductors (AREA)
HK720/84A 1976-03-22 1984-09-20 A schottky barrier semiconductor device and method of making same HK72084A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66890876A 1976-03-22 1976-03-22
US05/710,186 US4142195A (en) 1976-03-22 1976-07-30 Schottky barrier semiconductor device and method of making same

Publications (1)

Publication Number Publication Date
HK72084A true HK72084A (en) 1984-09-28

Family

ID=27100017

Family Applications (1)

Application Number Title Priority Date Filing Date
HK720/84A HK72084A (en) 1976-03-22 1984-09-20 A schottky barrier semiconductor device and method of making same

Country Status (6)

Country Link
JP (1) JPS52122471A (en)
CA (1) CA1078078A (en)
DE (1) DE2711365A1 (en)
FR (1) FR2345810A1 (en)
GB (1) GB1572846A (en)
HK (1) HK72084A (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394173A1 (en) * 1977-06-06 1979-01-05 Thomson Csf METHOD OF MANUFACTURING ELECTRONIC DEVICES WHICH INCLUDE A THIN LAYER OF AMORPHIC SILICON AND AN ELECTRONIC DEVICE OBTAINED BY SUCH A PROCESS
CA1123525A (en) * 1977-10-12 1982-05-11 Stanford R. Ovshinsky High temperature amorphous semiconductor member and method of making same
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
JPS54145537A (en) * 1978-05-04 1979-11-13 Canon Inc Preparation of electrophotographic image forming material
DE2836911C2 (en) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivation layer for semiconductor components
DE2904171A1 (en) * 1979-02-05 1980-08-14 Siemens Ag METHOD FOR PRODUCING SEMICONDUCTOR BODIES MADE OF AMORPHOUS SILICON BY GLIMMER DISCHARGE
US4200473A (en) * 1979-03-12 1980-04-29 Rca Corporation Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
AU535443B2 (en) * 1979-03-20 1984-03-22 Sanyo Electric Co., Ltd. Sunlight into energy conversion apparatus
US4226643A (en) * 1979-07-16 1980-10-07 Rca Corporation Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film
FR2462782A1 (en) * 1979-08-03 1981-02-13 Thomson Csf PROCESS FOR PRODUCING A LAYER CONTAINING SILICON AND PHOTOELECTRIC CONVERSION DEVICE USING THE SAME
FR2463508A1 (en) * 1979-08-16 1981-02-20 Anvar Ohmic contact mfr. on hydrogenated amorphous silicon - using intermediate layer starved of hydrogen
DE2946108C2 (en) * 1979-11-15 1985-02-14 Koch & Sterzel Gmbh & Co, 4300 Essen Radiation detector
JPS5728368A (en) * 1980-07-28 1982-02-16 Hitachi Ltd Manufacture of semiconductor film
US4412900A (en) * 1981-03-13 1983-11-01 Hitachi, Ltd. Method of manufacturing photosensors
JPS604273A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPS604274A (en) * 1983-06-22 1985-01-10 Toshiba Corp Photoelectric conversion member
JPS6088955A (en) * 1983-10-21 1985-05-18 Stanley Electric Co Ltd Plasma cvd device
JPS62142374A (en) * 1986-11-29 1987-06-25 Shunpei Yamazaki Manufacture of photoelectric conversion semiconductor device
JP2704569B2 (en) * 1991-06-28 1998-01-26 株式会社半導体エネルギー研究所 Semiconductor device manufacturing method
JPH077168A (en) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd Photoeletcric conversion semiconductor device

Also Published As

Publication number Publication date
JPS52122471A (en) 1977-10-14
FR2345810B1 (en) 1982-04-09
DE2711365C2 (en) 1988-09-01
CA1078078A (en) 1980-05-20
JPS616556B2 (en) 1986-02-27
FR2345810A1 (en) 1977-10-21
GB1572846A (en) 1980-08-06
DE2711365A1 (en) 1977-09-29

Similar Documents

Publication Publication Date Title
HK72084A (en) A schottky barrier semiconductor device and method of making same
JPS5310284A (en) Semiconductor device with schottky barrier electrode and method of producing same
DE2964082D1 (en) A semiconductor device having a layered structure and a method of making it
GB1548520A (en) Method of manufacturing a semiconductor device
JPS52134338A (en) Programmable readdonly semiconductor memory device and method of manufacturing same
AU508451B2 (en) Method of manufacturing a semiconductor device
GB1538370A (en) Method for forming a schottky barrier device
JPS5384464A (en) Schottky barrier contacting device
GB2081010B (en) Semiconductor device with a pn junction and its method of manufacture
DE2965786D1 (en) Semiconductor device and a method of producing the same
DE3164835D1 (en) Method of manufacturing a semiconductor device containing a schottky barrier, and device
JPS5369137A (en) Foilltube * its manufacturing method and its device
EP0002472A3 (en) Device and method for making doped semiconductor layers
DE3070994D1 (en) A semiconductor device and a method of manufacturing a semiconductor device
JPS52139386A (en) Method of producing semiconductor device and semiconductor device
JPS52114276A (en) Method of manufacturing semiconductor device
JPS5329666A (en) Method of making semiconductor device
DE3068271D1 (en) A semiconductor device and a method of manufacturing a semiconductor device
DE3071489D1 (en) Method of manufacturing a semiconductor device with a schottky junction
JPS52153176A (en) Case sealing device and its method
GB2000372B (en) Method of manufacturing a semiconductor device
JPS5321589A (en) Hetero junction semiconductor device and method of producing same
JPS5356973A (en) Semiconductor device and method of manufacture thereof
HK25484A (en) Semiconductor device and fabrication method
GB1548067A (en) Method of manufacturing a two-phase chargetransfer semi-conductor device and a device obtained by said method