FR2273375A1 - FET with drain and source electrodes coupled by semiconductor zone - has channel zone adjacent gate zone with specified impurities concentration - Google Patents

FET with drain and source electrodes coupled by semiconductor zone - has channel zone adjacent gate zone with specified impurities concentration

Info

Publication number
FR2273375A1
FR2273375A1 FR7508281A FR7508281A FR2273375A1 FR 2273375 A1 FR2273375 A1 FR 2273375A1 FR 7508281 A FR7508281 A FR 7508281A FR 7508281 A FR7508281 A FR 7508281A FR 2273375 A1 FR2273375 A1 FR 2273375A1
Authority
FR
France
Prior art keywords
zone
semiconductor
channel
impurities concentration
semiconductor zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7508281A
Other languages
English (en)
Other versions
FR2273375B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2961674A external-priority patent/JPS50123280A/ja
Priority claimed from JP3847374A external-priority patent/JPS50132877A/ja
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Publication of FR2273375A1 publication Critical patent/FR2273375A1/fr
Application granted granted Critical
Publication of FR2273375B1 publication Critical patent/FR2273375B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66416—Static induction transistors [SIT]
    • H01L29/66424—Permeable base transistors [PBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
FR7508281A 1974-03-16 1975-03-17 FET with drain and source electrodes coupled by semiconductor zone - has channel zone adjacent gate zone with specified impurities concentration Granted FR2273375A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2961674A JPS50123280A (fr) 1974-03-16 1974-03-16
JP3847374A JPS50132877A (fr) 1974-04-06 1974-04-06

Publications (2)

Publication Number Publication Date
FR2273375A1 true FR2273375A1 (en) 1975-12-26
FR2273375B1 FR2273375B1 (fr) 1978-02-03

Family

ID=26367834

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7508281A Granted FR2273375A1 (en) 1974-03-16 1975-03-17 FET with drain and source electrodes coupled by semiconductor zone - has channel zone adjacent gate zone with specified impurities concentration

Country Status (3)

Country Link
DE (1) DE2511487C2 (fr)
FR (1) FR2273375A1 (fr)
NL (1) NL163898C (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3976512A (en) * 1975-09-22 1976-08-24 Signetics Corporation Method for reducing the defect density of an integrated circuit utilizing ion implantation
GB2151844A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3497777A (en) * 1967-06-13 1970-02-24 Stanislas Teszner Multichannel field-effect semi-conductor device
JPS5217720B1 (fr) * 1971-07-31 1977-05-17

Also Published As

Publication number Publication date
DE2511487C2 (de) 1986-07-24
NL7503054A (nl) 1975-09-18
NL163898C (nl) 1980-10-15
DE2511487A1 (de) 1975-09-18
NL163898B (nl) 1980-05-16
FR2273375B1 (fr) 1978-02-03

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Legal Events

Date Code Title Description
ST Notification of lapse