FI942152A0 - Menetelmä työkappaleiden märkäkemialliseen käsittelyyn - Google Patents

Menetelmä työkappaleiden märkäkemialliseen käsittelyyn

Info

Publication number
FI942152A0
FI942152A0 FI942152A FI942152A FI942152A0 FI 942152 A0 FI942152 A0 FI 942152A0 FI 942152 A FI942152 A FI 942152A FI 942152 A FI942152 A FI 942152A FI 942152 A0 FI942152 A0 FI 942152A0
Authority
FI
Finland
Prior art keywords
workpieces
chemical treatment
wet chemical
wet
treatment
Prior art date
Application number
FI942152A
Other languages
English (en)
Swedish (sv)
Other versions
FI942152A (fi
Inventor
Guenter Dipl Ing Schwab
Max Dipl Chem Dr Stadler
Peter Romeder
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of FI942152A0 publication Critical patent/FI942152A0/fi
Publication of FI942152A publication Critical patent/FI942152A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/50—Circulation mixers, e.g. wherein at least part of the mixture is discharged from and reintroduced into a receptacle
    • B01F25/51—Circulation mixers, e.g. wherein at least part of the mixture is discharged from and reintroduced into a receptacle in which the mixture is circulated through a set of tubes, e.g. with gradual introduction of a component into the circulating flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
FI942152A 1993-05-13 1994-05-10 Menetelmä työkappaleiden märkäkemialliseen käsittelyyn FI942152A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4316096A DE4316096C1 (de) 1993-05-13 1993-05-13 Verfahren zur naßchemischen Behandlung scheibenförmiger Werkstücke

Publications (2)

Publication Number Publication Date
FI942152A0 true FI942152A0 (fi) 1994-05-10
FI942152A FI942152A (fi) 1994-11-14

Family

ID=6488049

Family Applications (1)

Application Number Title Priority Date Filing Date
FI942152A FI942152A (fi) 1993-05-13 1994-05-10 Menetelmä työkappaleiden märkäkemialliseen käsittelyyn

Country Status (10)

Country Link
US (1) US5451267A (fi)
EP (1) EP0625795B1 (fi)
JP (1) JP2687280B2 (fi)
KR (1) KR0140480B1 (fi)
CN (1) CN1031852C (fi)
DE (2) DE4316096C1 (fi)
FI (1) FI942152A (fi)
MY (1) MY110704A (fi)
RU (1) RU2099812C1 (fi)
TW (1) TW268134B (fi)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08172068A (ja) * 1994-12-19 1996-07-02 Fujitsu Ltd 半導体基板の洗浄方法及び半導体装置の製造方法
KR100226548B1 (ko) * 1996-12-24 1999-10-15 김영환 웨이퍼 습식 처리 장치
US5904156A (en) * 1997-09-24 1999-05-18 International Business Machines Corporation Dry film resist removal in the presence of electroplated C4's
US6319331B1 (en) * 1997-12-01 2001-11-20 Mitsubishi Denki Kabushiki Kaisha Method for processing semiconductor substrate
US6273107B1 (en) * 1997-12-05 2001-08-14 Texas Instruments Incorporated Positive flow, positive displacement rinse tank
MY120464A (en) * 1997-12-09 2005-10-31 Shinetsu Handotai Kk Semiconductor wafer processing method and semiconductor wafers produced by the same
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6273100B1 (en) 1998-08-27 2001-08-14 Micron Technology, Inc. Surface cleaning apparatus and method
US6372051B1 (en) * 1998-12-04 2002-04-16 Texas Instruments Incorporated Positive flow, positive displacement rinse tank
DE19927527B4 (de) 1999-06-16 2007-02-08 Siltronic Ag Verfahren zur naßchemischen Behandlung einer Halbleiterscheibe
DE19927457C2 (de) * 1999-06-16 2002-06-13 Wacker Siltronic Halbleitermat Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe
US6488037B1 (en) * 1999-08-31 2002-12-03 Texas Instruments Incorporated Programmable physical action during integrated circuit wafer cleanup
DE19943101C2 (de) * 1999-09-09 2002-06-20 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer gebondeten Halbleiterscheibe
DE19953152C1 (de) 1999-11-04 2001-02-15 Wacker Siltronic Halbleitermat Verfahren zur naßchemischen Oberflächenbehandlung einer Halbleiterscheibe
DE10002354A1 (de) 2000-01-20 2001-08-09 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE10031603C2 (de) * 2000-06-29 2002-06-13 Wacker Siltronic Halbleitermat Verfahren zur Herstellung mindestens einer Halbleiterscheibe durch Ätzen
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
KR100432495B1 (ko) * 2001-12-28 2004-05-22 주식회사 실트론 실리콘 웨이퍼 에칭장치
US20040050261A1 (en) * 2002-09-12 2004-03-18 Boutiette Paul K. Device and method for washing eggs
DE10302611B4 (de) * 2003-01-23 2011-07-07 Siltronic AG, 81737 Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild
CN1791793B (zh) * 2003-05-22 2010-12-15 皇家飞利浦电子股份有限公司 至少一个光学元件的清洁方法和装置
DE10328845B4 (de) * 2003-06-26 2005-10-20 Siltronic Ag Verfahren zur Oberflächenbehandlung einer Halbleiterscheibe
JP4869957B2 (ja) 2006-03-22 2012-02-08 大日本スクリーン製造株式会社 基板処理装置
CN101423619B (zh) * 2008-06-06 2011-02-09 东莞劲胜精密组件股份有限公司 塑胶件表面清洁方法
JP4841604B2 (ja) * 2008-09-30 2011-12-21 三菱電機株式会社 微細気泡供給装置および液体処理装置
JP5666086B2 (ja) * 2008-12-25 2015-02-12 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ シリコンウェハ洗浄装置
DE102009037281B4 (de) * 2009-08-12 2013-05-08 Siltronic Ag Verfahren zur Herstellung einer polierten Halbleiterscheibe
JP4567808B1 (ja) * 2010-01-27 2010-10-20 小嶺機械株式会社 食品洗浄装置
US11532493B2 (en) * 2018-07-30 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Wet bench and chemical treatment method using the same
CN109127564A (zh) * 2018-08-28 2019-01-04 郭来振 一种离心式高效中草药清洗装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE417507C (de) * 1925-08-11 Chem Fab Niederrhein G M B H F Verfahren zur Behandlung von Fluessigkeiten mit Gasen
JPS5928613B2 (ja) * 1980-10-09 1984-07-14 日本鉱業株式会社 反応装置
US4687523A (en) * 1985-08-16 1987-08-18 Mobil Oil Corporation Method for cleaning a core sample from a subterranean formation of solid contaminant particles
JPS6269612A (ja) * 1985-09-24 1987-03-30 Hitachi Ltd 処理装置
GB2207890B (en) * 1987-08-14 1991-05-01 Stc Plc Etching apparatus
DE3805076A1 (de) * 1988-02-18 1989-08-31 Holzer Walter Aetzanlage
JPH0644098Y2 (ja) * 1989-02-27 1994-11-14 黒谷 信子 半導体ウェハーの洗浄用バブラー
US5261966A (en) * 1991-01-28 1993-11-16 Kabushiki Kaisha Toshiba Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns

Also Published As

Publication number Publication date
KR0140480B1 (ko) 1998-07-15
JPH0714815A (ja) 1995-01-17
MY110704A (en) 1999-01-30
RU2099812C1 (ru) 1997-12-20
FI942152A (fi) 1994-11-14
EP0625795A1 (de) 1994-11-23
US5451267A (en) 1995-09-19
TW268134B (fi) 1996-01-11
KR940027090A (ko) 1994-12-10
CN1031852C (zh) 1996-05-22
RU94016182A (ru) 1996-07-10
DE4316096C1 (de) 1994-11-10
CN1095187A (zh) 1994-11-16
EP0625795B1 (de) 1996-09-18
JP2687280B2 (ja) 1997-12-08
DE59400669D1 (de) 1996-10-24

Similar Documents

Publication Publication Date Title
FI942152A0 (fi) Menetelmä työkappaleiden märkäkemialliseen käsittelyyn
ITMI940245A0 (it) Processo per il trattamento di rifiuti con impiego di ossidazione
NO961483D0 (no) Fremgangsmåte for behandling av oljeholdig formasjon
ID20531A (id) Alat pengobatan
NO953443D0 (no) Fremgangsmåte for behandling av fast avfall
FI930850A (fi) Em kemisk process
DE69702997T2 (de) Verfahren zur Behandlung von verunreinigtem Aluminiumoxid
BR9408156A (pt) Método para tratamento quimico de rejeitos
NO306262B1 (no) FremgangsmÕte for hydrogenbehandling
DK0577086T3 (da) Fremgangsmåde til overfladebehandling
FI932571A (fi) Kemisk process
PT719499E (pt) Processo de tratamento anti-germinativo de tuberculos ou bolbos
DE69717846T2 (de) Behandlungsverfahren von laktamen
FI954766A0 (fi) Prosessiveden käsittelymenetelmä
DE59611247D1 (de) Vorrichtung zur Oberflächenbehandlung von Werkstücken
DE69710044T2 (de) Vorrichtung zum elektrochemischen bearbeiten von werkstücken
DE69225002T2 (de) Anlage zum vakuum-plasma-behandlen von werkstücken
NO933892L (no) Fremgangsmåte for behandling av metallkloridinneholdende avfall
DE69510171T2 (de) Einrichtung zur Oberflächenbehandlung von metallischen Werkstücken
NO20006383L (no) Fremgangsmåte for behandling
DE59305800D1 (de) Werkzeug zur behandlung von oberflächen von bauteilen
FI954399A (fi) Kemiallinen prosessi
FI960317A (fi) Menetelmä ongelmajätteen käsittelemiseksi
FI961883A0 (fi) Jäteveden puhdistusmenetelmä
FI954635A0 (fi) Kemiallinen hapetusmenetelmä raskaasti kuormitetun jäteveden puhdistamista varten

Legal Events

Date Code Title Description
GB Transfer or assigment of application

Owner name: WACKER SILTRONIC GESELLSCHAFT FUER

HC Name/ company changed in application

Owner name: WACKER SILTRONIC GESELLSCHAFT FUER