KR0140480B1 - 가공품의 습식 화학적 처리방법 - Google Patents
가공품의 습식 화학적 처리방법Info
- Publication number
- KR0140480B1 KR0140480B1 KR1019940010141A KR19940010141A KR0140480B1 KR 0140480 B1 KR0140480 B1 KR 0140480B1 KR 1019940010141 A KR1019940010141 A KR 1019940010141A KR 19940010141 A KR19940010141 A KR 19940010141A KR 0140480 B1 KR0140480 B1 KR 0140480B1
- Authority
- KR
- South Korea
- Prior art keywords
- solution
- semiconductor
- gas
- workpiece
- treatment
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000000126 substance Substances 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 235000012431 wafers Nutrition 0.000 claims description 37
- 239000000243 solution Substances 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000008187 granular material Substances 0.000 claims description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000003570 air Substances 0.000 claims 1
- 238000002309 gasification Methods 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007970 homogeneous dispersion Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/50—Circulation mixers, e.g. wherein at least part of the mixture is discharged from and reintroduced into a receptacle
- B01F25/51—Circulation mixers, e.g. wherein at least part of the mixture is discharged from and reintroduced into a receptacle in which the mixture is circulated through a set of tubes, e.g. with gradual introduction of a component into the circulating flow
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
Landscapes
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE93-P4316096.4 | 1993-05-13 | ||
DE4316096A DE4316096C1 (de) | 1993-05-13 | 1993-05-13 | Verfahren zur naßchemischen Behandlung scheibenförmiger Werkstücke |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940027090A KR940027090A (ko) | 1994-12-10 |
KR0140480B1 true KR0140480B1 (ko) | 1998-07-15 |
Family
ID=6488049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940010141A KR0140480B1 (ko) | 1993-05-13 | 1994-05-09 | 가공품의 습식 화학적 처리방법 |
Country Status (10)
Country | Link |
---|---|
US (1) | US5451267A (fi) |
EP (1) | EP0625795B1 (fi) |
JP (1) | JP2687280B2 (fi) |
KR (1) | KR0140480B1 (fi) |
CN (1) | CN1031852C (fi) |
DE (2) | DE4316096C1 (fi) |
FI (1) | FI942152A (fi) |
MY (1) | MY110704A (fi) |
RU (1) | RU2099812C1 (fi) |
TW (1) | TW268134B (fi) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08172068A (ja) * | 1994-12-19 | 1996-07-02 | Fujitsu Ltd | 半導体基板の洗浄方法及び半導体装置の製造方法 |
KR100226548B1 (ko) * | 1996-12-24 | 1999-10-15 | 김영환 | 웨이퍼 습식 처리 장치 |
US5904156A (en) * | 1997-09-24 | 1999-05-18 | International Business Machines Corporation | Dry film resist removal in the presence of electroplated C4's |
US6319331B1 (en) * | 1997-12-01 | 2001-11-20 | Mitsubishi Denki Kabushiki Kaisha | Method for processing semiconductor substrate |
US6273107B1 (en) * | 1997-12-05 | 2001-08-14 | Texas Instruments Incorporated | Positive flow, positive displacement rinse tank |
MY120464A (en) * | 1997-12-09 | 2005-10-31 | Shinetsu Handotai Kk | Semiconductor wafer processing method and semiconductor wafers produced by the same |
DE19833257C1 (de) * | 1998-07-23 | 1999-09-30 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe |
US6273100B1 (en) | 1998-08-27 | 2001-08-14 | Micron Technology, Inc. | Surface cleaning apparatus and method |
US6372051B1 (en) * | 1998-12-04 | 2002-04-16 | Texas Instruments Incorporated | Positive flow, positive displacement rinse tank |
DE19927527B4 (de) | 1999-06-16 | 2007-02-08 | Siltronic Ag | Verfahren zur naßchemischen Behandlung einer Halbleiterscheibe |
DE19927457C2 (de) * | 1999-06-16 | 2002-06-13 | Wacker Siltronic Halbleitermat | Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe |
US6488037B1 (en) * | 1999-08-31 | 2002-12-03 | Texas Instruments Incorporated | Programmable physical action during integrated circuit wafer cleanup |
DE19943101C2 (de) * | 1999-09-09 | 2002-06-20 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer gebondeten Halbleiterscheibe |
DE19953152C1 (de) | 1999-11-04 | 2001-02-15 | Wacker Siltronic Halbleitermat | Verfahren zur naßchemischen Oberflächenbehandlung einer Halbleiterscheibe |
DE10002354A1 (de) | 2000-01-20 | 2001-08-09 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe |
DE10031603C2 (de) * | 2000-06-29 | 2002-06-13 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung mindestens einer Halbleiterscheibe durch Ätzen |
DE10064081C2 (de) * | 2000-12-21 | 2002-06-06 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe |
KR100432495B1 (ko) * | 2001-12-28 | 2004-05-22 | 주식회사 실트론 | 실리콘 웨이퍼 에칭장치 |
US20040050261A1 (en) * | 2002-09-12 | 2004-03-18 | Boutiette Paul K. | Device and method for washing eggs |
DE10302611B4 (de) * | 2003-01-23 | 2011-07-07 | Siltronic AG, 81737 | Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild |
CN1791793B (zh) * | 2003-05-22 | 2010-12-15 | 皇家飞利浦电子股份有限公司 | 至少一个光学元件的清洁方法和装置 |
DE10328845B4 (de) * | 2003-06-26 | 2005-10-20 | Siltronic Ag | Verfahren zur Oberflächenbehandlung einer Halbleiterscheibe |
JP4869957B2 (ja) | 2006-03-22 | 2012-02-08 | 大日本スクリーン製造株式会社 | 基板処理装置 |
CN101423619B (zh) * | 2008-06-06 | 2011-02-09 | 东莞劲胜精密组件股份有限公司 | 塑胶件表面清洁方法 |
JP4841604B2 (ja) * | 2008-09-30 | 2011-12-21 | 三菱電機株式会社 | 微細気泡供給装置および液体処理装置 |
JP5666086B2 (ja) * | 2008-12-25 | 2015-02-12 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | シリコンウェハ洗浄装置 |
DE102009037281B4 (de) * | 2009-08-12 | 2013-05-08 | Siltronic Ag | Verfahren zur Herstellung einer polierten Halbleiterscheibe |
JP4567808B1 (ja) * | 2010-01-27 | 2010-10-20 | 小嶺機械株式会社 | 食品洗浄装置 |
US11532493B2 (en) * | 2018-07-30 | 2022-12-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet bench and chemical treatment method using the same |
CN109127564A (zh) * | 2018-08-28 | 2019-01-04 | 郭来振 | 一种离心式高效中草药清洗装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE417507C (de) * | 1925-08-11 | Chem Fab Niederrhein G M B H F | Verfahren zur Behandlung von Fluessigkeiten mit Gasen | |
JPS5928613B2 (ja) * | 1980-10-09 | 1984-07-14 | 日本鉱業株式会社 | 反応装置 |
US4687523A (en) * | 1985-08-16 | 1987-08-18 | Mobil Oil Corporation | Method for cleaning a core sample from a subterranean formation of solid contaminant particles |
JPS6269612A (ja) * | 1985-09-24 | 1987-03-30 | Hitachi Ltd | 処理装置 |
GB2207890B (en) * | 1987-08-14 | 1991-05-01 | Stc Plc | Etching apparatus |
DE3805076A1 (de) * | 1988-02-18 | 1989-08-31 | Holzer Walter | Aetzanlage |
JPH0644098Y2 (ja) * | 1989-02-27 | 1994-11-14 | 黒谷 信子 | 半導体ウェハーの洗浄用バブラー |
US5261966A (en) * | 1991-01-28 | 1993-11-16 | Kabushiki Kaisha Toshiba | Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns |
-
1993
- 1993-05-13 DE DE4316096A patent/DE4316096C1/de not_active Expired - Fee Related
-
1994
- 1994-03-25 MY MYPI94000710A patent/MY110704A/en unknown
- 1994-03-28 TW TW083102694A patent/TW268134B/zh not_active IP Right Cessation
- 1994-05-09 KR KR1019940010141A patent/KR0140480B1/ko not_active IP Right Cessation
- 1994-05-10 FI FI942152A patent/FI942152A/fi unknown
- 1994-05-11 US US08/240,986 patent/US5451267A/en not_active Expired - Lifetime
- 1994-05-11 EP EP94107351A patent/EP0625795B1/de not_active Expired - Lifetime
- 1994-05-11 DE DE59400669T patent/DE59400669D1/de not_active Expired - Lifetime
- 1994-05-12 CN CN94105740A patent/CN1031852C/zh not_active Expired - Lifetime
- 1994-05-12 RU RU9494016182A patent/RU2099812C1/ru active
- 1994-05-12 JP JP6122010A patent/JP2687280B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0714815A (ja) | 1995-01-17 |
MY110704A (en) | 1999-01-30 |
RU2099812C1 (ru) | 1997-12-20 |
FI942152A (fi) | 1994-11-14 |
EP0625795A1 (de) | 1994-11-23 |
FI942152A0 (fi) | 1994-05-10 |
US5451267A (en) | 1995-09-19 |
TW268134B (fi) | 1996-01-11 |
KR940027090A (ko) | 1994-12-10 |
CN1031852C (zh) | 1996-05-22 |
RU94016182A (ru) | 1996-07-10 |
DE4316096C1 (de) | 1994-11-10 |
CN1095187A (zh) | 1994-11-16 |
EP0625795B1 (de) | 1996-09-18 |
JP2687280B2 (ja) | 1997-12-08 |
DE59400669D1 (de) | 1996-10-24 |
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