FI20165541A - Menetelmä substraatin päällystämiseksi ja laite - Google Patents

Menetelmä substraatin päällystämiseksi ja laite

Info

Publication number
FI20165541A
FI20165541A FI20165541A FI20165541A FI20165541A FI 20165541 A FI20165541 A FI 20165541A FI 20165541 A FI20165541 A FI 20165541A FI 20165541 A FI20165541 A FI 20165541A FI 20165541 A FI20165541 A FI 20165541A
Authority
FI
Finland
Prior art keywords
coating
substrate
Prior art date
Application number
FI20165541A
Other languages
English (en)
Swedish (sv)
Other versions
FI127503B (fi
Inventor
Mikko Söderlund
Pekka Soininen
Paavo Timonen
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20165541A priority Critical patent/FI127503B/fi
Priority to EP17819421.3A priority patent/EP3478872B1/en
Priority to US16/311,216 priority patent/US10385450B2/en
Priority to PCT/FI2017/050496 priority patent/WO2018002449A1/en
Priority to CN201780039932.9A priority patent/CN109415810A/zh
Publication of FI20165541A publication Critical patent/FI20165541A/fi
Application granted granted Critical
Publication of FI127503B publication Critical patent/FI127503B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
FI20165541A 2016-06-30 2016-06-30 Menetelmä substraatin päällystämiseksi ja laite FI127503B (fi)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FI20165541A FI127503B (fi) 2016-06-30 2016-06-30 Menetelmä substraatin päällystämiseksi ja laite
EP17819421.3A EP3478872B1 (en) 2016-06-30 2017-06-30 Method of coating a substrate and an apparatus
US16/311,216 US10385450B2 (en) 2016-06-30 2017-06-30 Method of coating a substrate and an apparatus
PCT/FI2017/050496 WO2018002449A1 (en) 2016-06-30 2017-06-30 Method of coating a substrate and an apparatus
CN201780039932.9A CN109415810A (zh) 2016-06-30 2017-06-30 涂覆基材的方法和装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20165541A FI127503B (fi) 2016-06-30 2016-06-30 Menetelmä substraatin päällystämiseksi ja laite

Publications (2)

Publication Number Publication Date
FI20165541A true FI20165541A (fi) 2017-12-31
FI127503B FI127503B (fi) 2018-07-31

Family

ID=60787187

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20165541A FI127503B (fi) 2016-06-30 2016-06-30 Menetelmä substraatin päällystämiseksi ja laite

Country Status (5)

Country Link
US (1) US10385450B2 (fi)
EP (1) EP3478872B1 (fi)
CN (1) CN109415810A (fi)
FI (1) FI127503B (fi)
WO (1) WO2018002449A1 (fi)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI129502B (fi) * 2019-04-25 2022-03-31 Beneq Oy Lähtöaineen syöttökaappi

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6820570B2 (en) * 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US7608549B2 (en) * 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
FI119478B (fi) * 2005-04-22 2008-11-28 Beneq Oy Reaktori
US7632542B2 (en) * 2005-10-26 2009-12-15 University Of Maryland Method for controlling uniformity of thin films fabricated in processing systems
US20080241387A1 (en) * 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
CN102127756A (zh) * 2011-02-21 2011-07-20 东华大学 一种脉冲调制射频等离子体增强原子层沉积装置及方法
CN102534569A (zh) * 2011-12-23 2012-07-04 嘉兴科民电子设备技术有限公司 一种常压辉光等离子体增强原子层沉积装置
KR102207992B1 (ko) * 2012-10-23 2021-01-26 램 리써치 코포레이션 서브-포화된 원자층 증착 및 등각막 증착
US9598769B2 (en) * 2013-07-24 2017-03-21 Uchicago Argonne, Llc Method and system for continuous atomic layer deposition
TWI588286B (zh) * 2013-11-26 2017-06-21 烏翠泰克股份有限公司 經改良的電漿強化原子層沉積方法、周期及裝置
CN104746045B (zh) * 2013-12-26 2018-03-06 北京北方华创微电子装备有限公司 化学气相沉积方法和装置
FI126315B (fi) * 2014-07-07 2016-09-30 Beneq Oy Suutinpää, laitteisto ja menetelmä substraatin pinnan altistamiseksi peräkkäisille pintareaktioille

Also Published As

Publication number Publication date
US20190186011A1 (en) 2019-06-20
CN109415810A (zh) 2019-03-01
EP3478872A4 (en) 2020-03-11
EP3478872A1 (en) 2019-05-08
US10385450B2 (en) 2019-08-20
FI127503B (fi) 2018-07-31
EP3478872B1 (en) 2022-11-30
WO2018002449A1 (en) 2018-01-04

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