FI120328B - CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi - Google Patents
CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi Download PDFInfo
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- FI120328B FI120328B FI20050375A FI20050375A FI120328B FI 120328 B FI120328 B FI 120328B FI 20050375 A FI20050375 A FI 20050375A FI 20050375 A FI20050375 A FI 20050375A FI 120328 B FI120328 B FI 120328B
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- 238000000034 method Methods 0.000 title claims description 37
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 238000003384 imaging method Methods 0.000 claims description 13
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- 230000035945 sensitivity Effects 0.000 description 11
- 230000006870 function Effects 0.000 description 9
- 206010070834 Sensitisation Diseases 0.000 description 6
- 230000008313 sensitization Effects 0.000 description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76816—Output structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/95—Computational photography systems, e.g. light-field imaging systems
- H04N23/951—Computational photography systems, e.g. light-field imaging systems by using two or more images to influence resolution, frame rate or aspect ratio
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/711—Time delay and integration [TDI] registers; TDI shift registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computing Systems (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20050375A FI120328B (fi) | 2005-04-12 | 2005-04-12 | CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi |
| EP06725927A EP1905087A4 (de) | 2005-04-12 | 2006-04-12 | Ccd-sensor und verfahren zum erweitern des dynamikumfangs eines ccd-sensors |
| JP2008505918A JP2008536422A (ja) | 2005-04-12 | 2006-04-12 | Ｃｃｄセンサ及びｃｃｄセンサのダイナミックレンジを拡大する方法 |
| PCT/FI2006/050152 WO2006108928A1 (en) | 2005-04-12 | 2006-04-12 | Ccd sensor and method for expanding dynamic range of ccd sensor |
| US11/871,581 US8279315B2 (en) | 2005-04-12 | 2007-10-12 | CCD sensor and method for expanding dynamic range of CCD sensor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20050375A FI120328B (fi) | 2005-04-12 | 2005-04-12 | CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi |
| FI20050375 | 2005-04-12 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI20050375A0 FI20050375A0 (fi) | 2005-04-12 |
| FI20050375A FI20050375A (sv) | 2006-10-13 |
| FI120328B true FI120328B (fi) | 2009-09-15 |
Family
ID=34508075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI20050375A FI120328B (fi) | 2005-04-12 | 2005-04-12 | CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1905087A4 (de) |
| JP (1) | JP2008536422A (de) |
| FI (1) | FI120328B (de) |
| WO (1) | WO2006108928A1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5629568B2 (ja) * | 2010-12-16 | 2014-11-19 | 富士フイルム株式会社 | 撮像装置及びその画素加算方法 |
| JP5455996B2 (ja) * | 2011-09-26 | 2014-03-26 | 富士フイルム株式会社 | 撮影装置、撮影プログラム、及び撮影方法 |
| JP2015053600A (ja) * | 2013-09-06 | 2015-03-19 | 富士フイルム株式会社 | 撮像装置及び画像補正データの生成方法 |
| JP2019514307A (ja) * | 2016-04-19 | 2019-05-30 | アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ | 撮像センサおよび画像情報を読み出すための方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8700372A (nl) * | 1987-02-16 | 1988-09-16 | Optische Ind De Oude Delft Nv | Beeldopneeminrichting. |
| JPH084136B2 (ja) * | 1987-12-22 | 1996-01-17 | 日本電気株式会社 | 電荷転送装置 |
| FR2653626A1 (fr) * | 1989-10-24 | 1991-04-26 | Thomson Composants Militaires | Capteur photosensible a temps d'integration programmable. |
| JP2624138B2 (ja) * | 1993-08-05 | 1997-06-25 | 日本電気株式会社 | 固体撮像素子 |
| JPH08298626A (ja) * | 1995-04-26 | 1996-11-12 | Nec Corp | 固体撮像素子 |
| FI97665C (fi) * | 1995-11-21 | 1997-01-27 | Planmed Oy | Menetelmät ja laitteet kohteen kuvantamisessa |
| DE59702797D1 (de) * | 1997-10-23 | 2001-01-25 | Fraunhofer Ges Forschung | Verfahren zur bilderzeugung bei der digitalen dentalen radiographie |
| EP1063844A4 (de) * | 1998-02-10 | 2007-07-11 | Nikon Corp | Verfahren und steuerung eines festkörperbildgerätes, bildgerät, ausrichtungsgerät und ausrichtungsverfahren |
| JPH11298805A (ja) * | 1998-04-06 | 1999-10-29 | Nikon Corp | Ｔｄｉ転送方式の固体撮像装置 |
| US7012644B1 (en) * | 2000-09-06 | 2006-03-14 | Hewlett-Packard Development Company, L.P. | Multiple output node charge coupled device |
| US6800870B2 (en) * | 2000-12-20 | 2004-10-05 | Michel Sayag | Light stimulating and collecting methods and apparatus for storage-phosphor image plates |
| US20040012689A1 (en) * | 2002-07-16 | 2004-01-22 | Fairchild Imaging | Charge coupled devices in tiled arrays |
| JP2004159274A (ja) * | 2002-09-13 | 2004-06-03 | Shoji Kawahito | 固体撮像装置 |
| JP2004194248A (ja) * | 2002-12-13 | 2004-07-08 | Chinon Ind Inc | 撮像素子及び撮像装置 |
| JP3863880B2 (ja) * | 2003-01-10 | 2006-12-27 | 松下電器産業株式会社 | 固体撮像装置およびカメラ |
| JP2004336823A (ja) * | 2004-08-16 | 2004-11-25 | Toshiba Corp | 撮像装置 |
-
2005
- 2005-04-12 FI FI20050375A patent/FI120328B/fi not_active IP Right Cessation
-
2006
- 2006-04-12 EP EP06725927A patent/EP1905087A4/de not_active Withdrawn
- 2006-04-12 JP JP2008505918A patent/JP2008536422A/ja active Pending
- 2006-04-12 WO PCT/FI2006/050152 patent/WO2006108928A1/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| FI20050375A0 (fi) | 2005-04-12 |
| FI20050375A (sv) | 2006-10-13 |
| EP1905087A1 (de) | 2008-04-02 |
| WO2006108928A1 (en) | 2006-10-19 |
| EP1905087A4 (de) | 2012-03-21 |
| JP2008536422A (ja) | 2008-09-04 |
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