FI20050375A0 - CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi - Google Patents

CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi

Info

Publication number
FI20050375A0
FI20050375A0 FI20050375A FI20050375A FI20050375A0 FI 20050375 A0 FI20050375 A0 FI 20050375A0 FI 20050375 A FI20050375 A FI 20050375A FI 20050375 A FI20050375 A FI 20050375A FI 20050375 A0 FI20050375 A0 FI 20050375A0
Authority
FI
Finland
Prior art keywords
ccd sensor
expanding
dynamics
ccd
sensor dynamics
Prior art date
Application number
FI20050375A
Other languages
English (en)
Swedish (sv)
Other versions
FI20050375A (sv
FI120328B (fi
Inventor
Godzinsky Christian De
Original Assignee
Planmeca Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Planmeca Oy filed Critical Planmeca Oy
Priority to FI20050375A priority Critical patent/FI120328B/fi
Publication of FI20050375A0 publication Critical patent/FI20050375A0/fi
Priority to JP2008505918A priority patent/JP2008536422A/ja
Priority to EP06725927A priority patent/EP1905087A4/en
Priority to PCT/FI2006/050152 priority patent/WO2006108928A1/en
Publication of FI20050375A publication Critical patent/FI20050375A/fi
Priority to US11/871,581 priority patent/US8279315B2/en
Application granted granted Critical
Publication of FI120328B publication Critical patent/FI120328B/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/95—Computational photography systems, e.g. light-field imaging systems
    • H04N23/951—Computational photography systems, e.g. light-field imaging systems by using two or more images to influence resolution, frame rate or aspect ratio
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/711—Time delay and integration [TDI] registers; TDI shift registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14825—Linear CCD imagers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computing Systems (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FI20050375A 2005-04-12 2005-04-12 CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi FI120328B (fi)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FI20050375A FI120328B (fi) 2005-04-12 2005-04-12 CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi
JP2008505918A JP2008536422A (ja) 2005-04-12 2006-04-12 Ｃｃｄセンサ及びｃｃｄセンサのダイナミックレンジを拡大する方法
EP06725927A EP1905087A4 (en) 2005-04-12 2006-04-12 CCD SENSOR AND METHOD FOR INCREASING THE DYNAMIC RANGE OF A CCD SENSOR
PCT/FI2006/050152 WO2006108928A1 (en) 2005-04-12 2006-04-12 Ccd sensor and method for expanding dynamic range of ccd sensor
US11/871,581 US8279315B2 (en) 2005-04-12 2007-10-12 CCD sensor and method for expanding dynamic range of CCD sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20050375 2005-04-12
FI20050375A FI120328B (fi) 2005-04-12 2005-04-12 CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi

Publications (3)

Publication Number Publication Date
FI20050375A0 true FI20050375A0 (fi) 2005-04-12
FI20050375A FI20050375A (sv) 2006-10-13
FI120328B FI120328B (fi) 2009-09-15

Family

ID=34508075

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20050375A FI120328B (fi) 2005-04-12 2005-04-12 CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi

Country Status (4)

Country Link
EP (1) EP1905087A4 (fi)
JP (1) JP2008536422A (fi)
FI (1) FI120328B (fi)
WO (1) WO2006108928A1 (fi)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5629568B2 (ja) * 2010-12-16 2014-11-19 富士フイルム株式会社 撮像装置及びその画素加算方法
JP5455996B2 (ja) * 2011-09-26 2014-03-26 富士フイルム株式会社 撮影装置、撮影プログラム、及び撮影方法
JP2015053600A (ja) * 2013-09-06 2015-03-19 富士フイルム株式会社 撮像装置及び画像補正データの生成方法
EP3446476B1 (en) * 2016-04-19 2024-03-06 IMEC vzw Imaging sensor and method for reading out image information
CN114584757A (zh) * 2021-12-09 2022-06-03 中国科学院合肥物质科学研究院 一种简易式ccd满阱测试方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8700372A (nl) * 1987-02-16 1988-09-16 Optische Ind De Oude Delft Nv Beeldopneeminrichting.
JPH084136B2 (ja) * 1987-12-22 1996-01-17 日本電気株式会社 電荷転送装置
FR2653626A1 (fr) * 1989-10-24 1991-04-26 Thomson Composants Militaires Capteur photosensible a temps d'integration programmable.
JP2624138B2 (ja) * 1993-08-05 1997-06-25 日本電気株式会社 固体撮像素子
JPH08298626A (ja) * 1995-04-26 1996-11-12 Nec Corp 固体撮像素子
FI97665C (fi) * 1995-11-21 1997-01-27 Planmed Oy Menetelmät ja laitteet kohteen kuvantamisessa
DE59702797D1 (de) * 1997-10-23 2001-01-25 Fraunhofer Ges Forschung Verfahren zur bilderzeugung bei der digitalen dentalen radiographie
WO1999041904A1 (fr) * 1998-02-10 1999-08-19 Nikon Corporation Procede d'entrainement d'un dispositif d'imagerie a semi-conducteurs, dispositif d'imagerie, dispositif d'alignement et procede d'alignement
JPH11298805A (ja) * 1998-04-06 1999-10-29 Nikon Corp Ｔｄｉ転送方式の固体撮像装置
US7012644B1 (en) * 2000-09-06 2006-03-14 Hewlett-Packard Development Company, L.P. Multiple output node charge coupled device
US6800870B2 (en) * 2000-12-20 2004-10-05 Michel Sayag Light stimulating and collecting methods and apparatus for storage-phosphor image plates
US20040012689A1 (en) * 2002-07-16 2004-01-22 Fairchild Imaging Charge coupled devices in tiled arrays
JP2004159274A (ja) * 2002-09-13 2004-06-03 Shoji Kawahito 固体撮像装置
JP2004194248A (ja) * 2002-12-13 2004-07-08 Chinon Ind Inc 撮像素子及び撮像装置
JP3863880B2 (ja) * 2003-01-10 2006-12-27 松下電器産業株式会社 固体撮像装置およびカメラ
JP2004336823A (ja) * 2004-08-16 2004-11-25 Toshiba Corp 撮像装置

Also Published As

Publication number Publication date
EP1905087A1 (en) 2008-04-02
JP2008536422A (ja) 2008-09-04
WO2006108928A1 (en) 2006-10-19
FI20050375A (sv) 2006-10-13
FI120328B (fi) 2009-09-15
EP1905087A4 (en) 2012-03-21

Similar Documents

Publication Publication Date Title
FI20050739A0 (fi) Mikromekaaninen sensori, sensoriryhmä ja menetelmä
DK1968429T3 (da) Fremgangsmåde og system til stabilisering af sensorer
BRPI0716500A2 (pt) Projétil e método de direcionamento de projétil
DE602006020651D1 (de) Kalibrierverfahren und -vorrichtung
SE0702458L (sv) Styrsystem och -metod
FI20075978A0 (fi) Järjestely ja menetelmä
EP1953817A4 (en) SENSOR DEVICE AND MANUFACTURING METHOD THEREFOR
EP1983885A4 (en) SENSOR SYSTEM WITH MEMORY AND METHOD OF USE THEREOF
HK1130088A1 (zh) 電流型傳感器及其製造方法
FI20065348A0 (fi) Spektrometri ja inferferometrinen menetelmä
FI20060669A0 (fi) Järjestelmä ja menetelmä kaasun käyttämiseksi
DE602006020588D1 (de) Infrarotsensor und herstellungsverfahren dafür
FI20045322A0 (fi) Kuivain sekä menetelmä sen käyttämiseksi ja valmistamiseksi
DE602006002916D1 (de) Interferometer und Kalibrierverfahren dafür
DE602007010225D1 (de) Synchronisationsverfahren und -anordnung
NO20074975L (no) Fremgangsmate og system for sensorgeometri
BRPI0718145A2 (pt) Método de micronização
DE602007000113D1 (de) Bildmesssystem, Bildmessverfahren und Bildmessprogramm
EP1953816A4 (en) SENSOR ARRANGEMENT AND PROCESS FOR THEIR MANUFACTURE
DE602007000656D1 (de) Transportsystem und Transportverfahren
EP1912190A4 (en) DETECTOR AND METHOD FOR ACQUIRING SETTING INFORMATION THEREOF
FI20050375A0 (fi) CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi
FI20055576A0 (fi) Monikerrospaperi ja menetelmä sen valmistamiseksi
FI20075312A0 (fi) Teräsrunko ja menetelmä sen pystyttämiseksi
FI20050374A0 (fi) CCD-sensori ja menetelmä CCD-sensorin dynamiikan laajentamiseksi

Legal Events

Date Code Title Description
FD Application lapsed
RF Appeal filed
FG Patent granted

Ref document number: 120328

Country of ref document: FI

MM Patent lapsed