FI116109B - Styrkoppling för halvledarkomponent - Google Patents

Styrkoppling för halvledarkomponent Download PDF

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Publication number
FI116109B
FI116109B FI20045171A FI20045171A FI116109B FI 116109 B FI116109 B FI 116109B FI 20045171 A FI20045171 A FI 20045171A FI 20045171 A FI20045171 A FI 20045171A FI 116109 B FI116109 B FI 116109B
Authority
FI
Finland
Prior art keywords
voltage
och
igb
till
terminal
Prior art date
Application number
FI20045171A
Other languages
English (en)
Finnish (fi)
Other versions
FI20045171A0 (sv
Inventor
Erkki Miettinen
Original Assignee
Abb Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Oy filed Critical Abb Oy
Priority to FI20045171A priority Critical patent/FI116109B/sv
Publication of FI20045171A0 publication Critical patent/FI20045171A0/sv
Priority to US11/118,781 priority patent/US7109780B2/en
Priority to AT05103783T priority patent/ATE522027T1/de
Priority to EP05103783A priority patent/EP1596496B1/en
Application granted granted Critical
Publication of FI116109B publication Critical patent/FI116109B/sv

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/0406—Modifications for accelerating switching in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit

Landscapes

  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Networks Using Active Elements (AREA)
FI20045171A 2004-05-10 2004-05-10 Styrkoppling för halvledarkomponent FI116109B (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FI20045171A FI116109B (sv) 2004-05-10 2004-05-10 Styrkoppling för halvledarkomponent
US11/118,781 US7109780B2 (en) 2004-05-10 2005-05-02 Control circuit for semiconductor component
AT05103783T ATE522027T1 (de) 2004-05-10 2005-05-06 Ansteuerschaltung für einen bipolartransistor mit isoliertem gate (igbt)
EP05103783A EP1596496B1 (en) 2004-05-10 2005-05-06 Control circuit for an insulated gate bipolar transistor (IGBT)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20045171 2004-05-10
FI20045171A FI116109B (sv) 2004-05-10 2004-05-10 Styrkoppling för halvledarkomponent

Publications (2)

Publication Number Publication Date
FI20045171A0 FI20045171A0 (sv) 2004-05-10
FI116109B true FI116109B (sv) 2005-09-15

Family

ID=32338450

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20045171A FI116109B (sv) 2004-05-10 2004-05-10 Styrkoppling för halvledarkomponent

Country Status (4)

Country Link
US (1) US7109780B2 (sv)
EP (1) EP1596496B1 (sv)
AT (1) ATE522027T1 (sv)
FI (1) FI116109B (sv)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI118145B (sv) * 2006-01-09 2007-07-13 Abb Oy Stängning av en gallerstyrd koppling
JP2008306618A (ja) * 2007-06-11 2008-12-18 Nissan Motor Co Ltd 電圧駆動型素子を駆動するための駆動回路
DE102007036728B3 (de) * 2007-08-03 2008-09-11 Semikron Elektronik Gmbh & Co. Kg Treiberschaltung zur Ansteuerung eines Leistungshalbleiterschalters
CN101888229B (zh) * 2010-05-25 2013-03-27 中国电力科学研究院 一种新的igbt高压串联阀控制与监测系统
TWI428611B (zh) 2010-09-10 2014-03-01 Ind Tech Res Inst 零偏壓式功率偵測器
ITTO20110769A1 (it) 2011-08-12 2013-02-13 Magneti Marelli Spa Dispositivo e metodo di scarica per un condensatore in un impianto elettrico di potenza di un veicolo con trazione elettrica
US10224923B2 (en) * 2012-10-31 2019-03-05 Nxp Usa, Inc. Method and apparatus for driving a power transistor gate
CN105359410B (zh) 2013-07-04 2018-01-30 飞思卡尔半导体公司 栅极驱动电路以及用于控制功率晶体管的方法
WO2015001373A1 (en) 2013-07-04 2015-01-08 Freescale Semiconductor, Inc. A gate drive circuit and a method for setting up a gate drive circuit
JP6842837B2 (ja) * 2016-03-30 2021-03-17 ローム株式会社 ゲート駆動回路
DE102016006227B3 (de) * 2016-05-19 2017-08-31 Audi Ag Elektrische Schaltungsanordnung
DE102016220279A1 (de) 2016-10-17 2018-04-19 Robert Bosch Gmbh Schaltungsanordnung zur Vorladung einer Zwischenkreiskapazität eines Hochvolt-Bordnetzes
US10505579B2 (en) * 2018-02-02 2019-12-10 Samsung Electro-Mechanics Co., Ltd. Radio frequency switching device for fast switching operation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0354435B1 (en) * 1988-08-12 1995-12-20 Hitachi, Ltd. A drive circuit for an insulated gate transistor; and its use in a switching circuit, a current switching apparatus and an induction motor system
JP2674355B2 (ja) 1991-05-15 1997-11-12 三菱電機株式会社 パワー素子の過電流保護装置
FI97176C (sv) 1994-09-27 1996-10-25 Abb Industry Oy Styrkrets för en halvledarkopplare
US5500616A (en) * 1995-01-13 1996-03-19 Ixys Corporation Overvoltage clamp and desaturation detection circuit
EP0814564A1 (en) * 1996-06-20 1997-12-29 ANSALDO INDUSTRIA S.p.A. Electronic switching circuit with reduction of switching transients
US6094087A (en) * 1997-07-30 2000-07-25 Lucent Technologies Inc. Gate drive circuit for isolated gate devices and method of operation thereof
FI110972B (sv) 1999-03-10 2003-04-30 Abb Industry Oy Stabiliserad gallerstyrare
ES2302695T3 (es) * 2000-07-13 2008-08-01 Ct-Concept Technologie Ag Procedimiento y dispositivo para regular, en funcion del estado, el comportamiento transitorio de interruptores de semiconductor de potencia.

Also Published As

Publication number Publication date
ATE522027T1 (de) 2011-09-15
FI20045171A0 (sv) 2004-05-10
US7109780B2 (en) 2006-09-19
US20050248384A1 (en) 2005-11-10
EP1596496B1 (en) 2011-08-24
EP1596496A1 (en) 2005-11-16

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