ES8800306A1 - Procedimiento de fabricacion de dispositivos en estado solido tales como dispositivos semiconductores de burbuja magnetica de comunicacion optica con una capa organica,generalmente un polimero,por delineacion mediante un atmosfera de - Google Patents

Procedimiento de fabricacion de dispositivos en estado solido tales como dispositivos semiconductores de burbuja magnetica de comunicacion optica con una capa organica,generalmente un polimero,por delineacion mediante un atmosfera de

Info

Publication number
ES8800306A1
ES8800306A1 ES535948A ES535948A ES8800306A1 ES 8800306 A1 ES8800306 A1 ES 8800306A1 ES 535948 A ES535948 A ES 535948A ES 535948 A ES535948 A ES 535948A ES 8800306 A1 ES8800306 A1 ES 8800306A1
Authority
ES
Spain
Prior art keywords
organic layer
gas
layer
protective compound
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES535948A
Other languages
English (en)
Spanish (es)
Other versions
ES535948A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of ES535948A0 publication Critical patent/ES535948A0/es
Publication of ES8800306A1 publication Critical patent/ES8800306A1/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H10P95/00—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
ES535948A 1983-09-16 1984-09-14 Procedimiento de fabricacion de dispositivos en estado solido tales como dispositivos semiconductores de burbuja magnetica de comunicacion optica con una capa organica,generalmente un polimero,por delineacion mediante un atmosfera de Expired ES8800306A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53277683A 1983-09-16 1983-09-16

Publications (2)

Publication Number Publication Date
ES535948A0 ES535948A0 (es) 1987-11-16
ES8800306A1 true ES8800306A1 (es) 1987-11-16

Family

ID=24123116

Family Applications (1)

Application Number Title Priority Date Filing Date
ES535948A Expired ES8800306A1 (es) 1983-09-16 1984-09-14 Procedimiento de fabricacion de dispositivos en estado solido tales como dispositivos semiconductores de burbuja magnetica de comunicacion optica con una capa organica,generalmente un polimero,por delineacion mediante un atmosfera de

Country Status (6)

Country Link
EP (1) EP0136130B1 (cg-RX-API-DMAC10.html)
JP (1) JPS6085526A (cg-RX-API-DMAC10.html)
KR (1) KR910006163B1 (cg-RX-API-DMAC10.html)
CA (1) CA1248402A (cg-RX-API-DMAC10.html)
DE (1) DE3480666D1 (cg-RX-API-DMAC10.html)
ES (1) ES8800306A1 (cg-RX-API-DMAC10.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
CA1267378A (en) * 1984-12-07 1990-04-03 Jer-Ming Yang Top imaged and organosilicon treated polymer layer developable with plasma
GB2170015A (en) * 1985-01-11 1986-07-23 Philips Electronic Associated Method of manufacturing a semiconductor device
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
CA1282273C (en) * 1985-03-19 1991-04-02 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
JPS61268028A (ja) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ホトレジスト中にマスク像を現像する方法
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
DE3682395D1 (de) * 1986-03-27 1991-12-12 Ibm Verfahren zur herstellung von seitenstrukturen.
DE3764702D1 (de) * 1986-04-24 1990-10-11 Ibm Zwei-schichten-photolack-verfahren mit deckschicht.
JPS62263645A (ja) * 1986-05-06 1987-11-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 電気的接点構造とその形成方法
GB8611229D0 (en) * 1986-05-08 1986-06-18 Ucb Sa Forming positive pattern
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
DE3772267D1 (de) * 1986-06-12 1991-09-26 Matsushita Electric Industrial Co Ltd Bilderzeugungsverfahren.
US4690838A (en) * 1986-08-25 1987-09-01 International Business Machines Corporation Process for enhancing the resistance of a resist image to reactive ion etching and to thermal flow
US4931351A (en) * 1987-01-12 1990-06-05 Eastman Kodak Company Bilayer lithographic process
JPH01186934A (ja) * 1988-01-21 1989-07-26 Toshiba Corp パターン形成方法
US5275920A (en) * 1989-04-24 1994-01-04 Siemens Aktiengesellschaft Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water
JP3001607B2 (ja) * 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
DE3913434A1 (de) * 1989-04-24 1990-10-25 Siemens Ag Trockenwickelbares resistsystem
JP2930971B2 (ja) * 1989-06-22 1999-08-09 株式会社東芝 パターン形成方法
EP0451311B1 (de) * 1990-04-12 1999-03-10 Siemens Aktiengesellschaft Verfahren zur Erzeugung einer Resiststruktur
EP0492256B1 (de) * 1990-12-20 1996-08-14 Siemens Aktiengesellschaft Photolithographische Strukturerzeugung
DE59506534D1 (de) * 1994-05-25 1999-09-09 Siemens Ag Trockenentwickelbarer positivresist
CN115047728B (zh) * 2022-07-01 2025-04-08 中国科学院光电技术研究所 等离子体共振腔透镜光刻的成像结构保护方法及其结构

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
EP0058214B1 (en) * 1981-02-16 1985-06-19 International Business Machines Corporation Method for increasing the resistance of a solid material surface against etching

Also Published As

Publication number Publication date
DE3480666D1 (de) 1990-01-11
EP0136130B1 (en) 1989-12-06
ES535948A0 (es) 1987-11-16
KR910006163B1 (ko) 1991-08-16
KR850002672A (ko) 1985-05-15
CA1248402A (en) 1989-01-10
JPS6085526A (ja) 1985-05-15
EP0136130A3 (en) 1985-11-06
JPH0340936B2 (cg-RX-API-DMAC10.html) 1991-06-20
EP0136130A2 (en) 1985-04-03

Similar Documents

Publication Publication Date Title
ES8800306A1 (es) Procedimiento de fabricacion de dispositivos en estado solido tales como dispositivos semiconductores de burbuja magnetica de comunicacion optica con una capa organica,generalmente un polimero,por delineacion mediante un atmosfera de
FR2473772B1 (fr) Dispositif de memoire a semi-conducteurs et procede pour le fabriquer
YU218890A (sh) Zeleno staklo za apsorpciju infracrvenog i ultravioletnog zračenja i automobilska stakla izradjena od istog
JPS57169996A (en) Magnetooptic storage element
CN104617234A (zh) 隔垫物、有机电致发光显示面板、制作方法及显示装置
JPS57210635A (en) Manufacture of semiconductor device
ES396182A1 (es) Un procedimiento para mejorar el rendimiento de una cons- truccion retrorreflectante que contiene globulos de vidrio.
DK1333864T3 (da) Radionuklidholdigt kornformet materiale med lille massefylde
ES8406798A1 (es) Un metodo para producir un dispositivo semiconductor fotovoltaico de pelicula delgada con prioridades opticas mejoradas
US3258352A (en) Method for producing in a glass article stresses heterogeneously distributed
CN105549319B (zh) 掩膜版及掩膜曝光方法、掩膜系统和图形控制装置
JPS6488550A (en) Photomask
SE428293B (sv) Glas, innehallande sio?712, pbo och al?712o?713 samt anvendning av detsamma som en passiviserande glasbeleggning for halvledaranordning
ATE35323T1 (de) Photolithographie.
JPS57181443A (en) Information storage medium
JPS53105964A (en) Manufacture of semiconductor device
JPS5710232A (en) Forming method for resist pattern
JPS5651738A (en) Minute pattern forming method
BE893700A (fr) Dispositifs a semi-conducteurs pour fortes puissances, passives avec du verre
ATE54893T1 (de) Likoerflasche aus glas.
JPS5247811A (en) Colorless soda lime glass for absorbing ultraviolet rays
JPS57111020A (en) Manufacture of semiconductor device
KR850005708A (ko) 핵연료 펠릿 그레이징용 조성물
JPS5382139A (en) Protection method for frasable read only memory
JPS57179850A (en) Keeping method for photo mask