DE3480666D1 - Verfahren zur herstellung von gegenstaenden mit plasma-entwicklung unter verwendung einer aktiven gasschicht. - Google Patents
Verfahren zur herstellung von gegenstaenden mit plasma-entwicklung unter verwendung einer aktiven gasschicht.Info
- Publication number
- DE3480666D1 DE3480666D1 DE8484306149T DE3480666T DE3480666D1 DE 3480666 D1 DE3480666 D1 DE 3480666D1 DE 8484306149 T DE8484306149 T DE 8484306149T DE 3480666 T DE3480666 T DE 3480666T DE 3480666 D1 DE3480666 D1 DE 3480666D1
- Authority
- DE
- Germany
- Prior art keywords
- active gas
- gas layer
- producing objects
- plasma development
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53277683A | 1983-09-16 | 1983-09-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3480666D1 true DE3480666D1 (de) | 1990-01-11 |
Family
ID=24123116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484306149T Expired - Fee Related DE3480666D1 (de) | 1983-09-16 | 1984-09-07 | Verfahren zur herstellung von gegenstaenden mit plasma-entwicklung unter verwendung einer aktiven gasschicht. |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0136130B1 (de) |
JP (1) | JPS6085526A (de) |
KR (1) | KR910006163B1 (de) |
CA (1) | CA1248402A (de) |
DE (1) | DE3480666D1 (de) |
ES (1) | ES8800306A1 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4552833A (en) * | 1984-05-14 | 1985-11-12 | International Business Machines Corporation | Radiation sensitive and oxygen plasma developable resist |
GB8427149D0 (en) * | 1984-10-26 | 1984-12-05 | Ucb Sa | Resist materials |
CA1267378A (en) * | 1984-12-07 | 1990-04-03 | Jer-Ming Yang | Top imaged and organosilicon treated polymer layer developable with plasma |
GB2170015A (en) * | 1985-01-11 | 1986-07-23 | Philips Electronic Associated | Method of manufacturing a semiconductor device |
CA1282273C (en) * | 1985-03-19 | 1991-04-02 | International Business Machines Corporation | Method of creating patterned multilayer films for use in production of semiconductor circuits and systems |
US4908298A (en) * | 1985-03-19 | 1990-03-13 | International Business Machines Corporation | Method of creating patterned multilayer films for use in production of semiconductor circuits and systems |
US4782008A (en) * | 1985-03-19 | 1988-11-01 | International Business Machines Corporation | Plasma-resistant polymeric material, preparation thereof, and use thereof |
JPS61268028A (ja) * | 1985-04-08 | 1986-11-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | ホトレジスト中にマスク像を現像する方法 |
US4613398A (en) * | 1985-06-06 | 1986-09-23 | International Business Machines Corporation | Formation of etch-resistant resists through preferential permeation |
US4657845A (en) * | 1986-01-14 | 1987-04-14 | International Business Machines Corporation | Positive tone oxygen plasma developable photoresist |
DE3682395D1 (de) * | 1986-03-27 | 1991-12-12 | Ibm | Verfahren zur herstellung von seitenstrukturen. |
EP0244572B1 (de) * | 1986-04-24 | 1990-09-05 | International Business Machines Corporation | Zwei-Schichten-Photolack-Verfahren mit Deckschicht |
JPS62263645A (ja) * | 1986-05-06 | 1987-11-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 電気的接点構造とその形成方法 |
GB8611229D0 (en) * | 1986-05-08 | 1986-06-18 | Ucb Sa | Forming positive pattern |
US4737425A (en) * | 1986-06-10 | 1988-04-12 | International Business Machines Corporation | Patterned resist and process |
DE3772267D1 (de) * | 1986-06-12 | 1991-09-26 | Matsushita Electric Ind Co Ltd | Bilderzeugungsverfahren. |
US4690838A (en) * | 1986-08-25 | 1987-09-01 | International Business Machines Corporation | Process for enhancing the resistance of a resist image to reactive ion etching and to thermal flow |
US4931351A (en) * | 1987-01-12 | 1990-06-05 | Eastman Kodak Company | Bilayer lithographic process |
JPH01186934A (ja) * | 1988-01-21 | 1989-07-26 | Toshiba Corp | パターン形成方法 |
DE3913434A1 (de) * | 1989-04-24 | 1990-10-25 | Siemens Ag | Trockenwickelbares resistsystem |
JP3001607B2 (ja) * | 1989-04-24 | 2000-01-24 | シーメンス、アクチエンゲゼルシヤフト | 二層法における寸法安定な構造転写方法 |
US5275920A (en) * | 1989-04-24 | 1994-01-04 | Siemens Aktiengesellschaft | Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water |
JP2930971B2 (ja) * | 1989-06-22 | 1999-08-09 | 株式会社東芝 | パターン形成方法 |
DE59010864D1 (de) * | 1990-04-12 | 1999-04-15 | Siemens Ag | Verfahren zur Erzeugung einer Resiststruktur |
EP0492256B1 (de) * | 1990-12-20 | 1996-08-14 | Siemens Aktiengesellschaft | Photolithographische Strukturerzeugung |
EP0760971B1 (de) * | 1994-05-25 | 1999-08-04 | Siemens Aktiengesellschaft | Trockenentwickelbarer positivresist |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53122427A (en) * | 1977-04-01 | 1978-10-25 | Hitachi Ltd | Forming method for photo-resist pattern |
US4307178A (en) * | 1980-04-30 | 1981-12-22 | International Business Machines Corporation | Plasma develoment of resists |
JPS5723937A (en) * | 1980-07-17 | 1982-02-08 | Matsushita Electric Ind Co Ltd | Photographic etching method |
DE3170974D1 (en) * | 1981-02-16 | 1985-07-25 | Ibm | Method for increasing the resistance of a solid material surface against etching |
-
1984
- 1984-08-22 CA CA000461532A patent/CA1248402A/en not_active Expired
- 1984-09-07 DE DE8484306149T patent/DE3480666D1/de not_active Expired - Fee Related
- 1984-09-07 EP EP84306149A patent/EP0136130B1/de not_active Expired
- 1984-09-14 JP JP59191844A patent/JPS6085526A/ja active Granted
- 1984-09-14 ES ES535948A patent/ES8800306A1/es not_active Expired
- 1984-09-15 KR KR1019840005642A patent/KR910006163B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR910006163B1 (ko) | 1991-08-16 |
ES535948A0 (es) | 1987-11-16 |
EP0136130B1 (de) | 1989-12-06 |
EP0136130A3 (en) | 1985-11-06 |
JPS6085526A (ja) | 1985-05-15 |
ES8800306A1 (es) | 1987-11-16 |
EP0136130A2 (de) | 1985-04-03 |
CA1248402A (en) | 1989-01-10 |
KR850002672A (ko) | 1985-05-15 |
JPH0340936B2 (de) | 1991-06-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN |
|
8339 | Ceased/non-payment of the annual fee |