ES535948A0 - Procedimiento de fabricacion de dispositivos en estado solido tales como dispositivos semiconductores de burbuja magnetica de comunicacion optica con una capa organica,generalmente un polimero,por delineacion mediante un atmosfera de - Google Patents

Procedimiento de fabricacion de dispositivos en estado solido tales como dispositivos semiconductores de burbuja magnetica de comunicacion optica con una capa organica,generalmente un polimero,por delineacion mediante un atmosfera de

Info

Publication number
ES535948A0
ES535948A0 ES535948A ES535948A ES535948A0 ES 535948 A0 ES535948 A0 ES 535948A0 ES 535948 A ES535948 A ES 535948A ES 535948 A ES535948 A ES 535948A ES 535948 A0 ES535948 A0 ES 535948A0
Authority
ES
Spain
Prior art keywords
delineation
atmosphere
polymer
generally
organic layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES535948A
Other languages
English (en)
Other versions
ES8800306A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of ES535948A0 publication Critical patent/ES535948A0/es
Publication of ES8800306A1 publication Critical patent/ES8800306A1/es
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
ES535948A 1983-09-16 1984-09-14 Procedimiento de fabricacion de dispositivos en estado solido tales como dispositivos semiconductores de burbuja magnetica de comunicacion optica con una capa organica,generalmente un polimero,por delineacion mediante un atmosfera de Expired ES8800306A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53277683A 1983-09-16 1983-09-16

Publications (2)

Publication Number Publication Date
ES535948A0 true ES535948A0 (es) 1987-11-16
ES8800306A1 ES8800306A1 (es) 1987-11-16

Family

ID=24123116

Family Applications (1)

Application Number Title Priority Date Filing Date
ES535948A Expired ES8800306A1 (es) 1983-09-16 1984-09-14 Procedimiento de fabricacion de dispositivos en estado solido tales como dispositivos semiconductores de burbuja magnetica de comunicacion optica con una capa organica,generalmente un polimero,por delineacion mediante un atmosfera de

Country Status (6)

Country Link
EP (1) EP0136130B1 (es)
JP (1) JPS6085526A (es)
KR (1) KR910006163B1 (es)
CA (1) CA1248402A (es)
DE (1) DE3480666D1 (es)
ES (1) ES8800306A1 (es)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
CA1267378A (en) * 1984-12-07 1990-04-03 Jer-Ming Yang Top imaged and organosilicon treated polymer layer developable with plasma
GB2170015A (en) * 1985-01-11 1986-07-23 Philips Electronic Associated Method of manufacturing a semiconductor device
CA1282273C (en) * 1985-03-19 1991-04-02 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
JPS61268028A (ja) * 1985-04-08 1986-11-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ホトレジスト中にマスク像を現像する方法
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
DE3682395D1 (de) * 1986-03-27 1991-12-12 Ibm Verfahren zur herstellung von seitenstrukturen.
DE3764702D1 (de) * 1986-04-24 1990-10-11 Ibm Zwei-schichten-photolack-verfahren mit deckschicht.
JPS62263645A (ja) * 1986-05-06 1987-11-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 電気的接点構造とその形成方法
GB8611229D0 (en) * 1986-05-08 1986-06-18 Ucb Sa Forming positive pattern
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
DE3772267D1 (de) * 1986-06-12 1991-09-26 Matsushita Electric Industrial Co Ltd Bilderzeugungsverfahren.
US4690838A (en) * 1986-08-25 1987-09-01 International Business Machines Corporation Process for enhancing the resistance of a resist image to reactive ion etching and to thermal flow
US4931351A (en) * 1987-01-12 1990-06-05 Eastman Kodak Company Bilayer lithographic process
JPH01186934A (ja) * 1988-01-21 1989-07-26 Toshiba Corp パターン形成方法
US5275920A (en) * 1989-04-24 1994-01-04 Siemens Aktiengesellschaft Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water
JP3001607B2 (ja) * 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
DE3913434A1 (de) * 1989-04-24 1990-10-25 Siemens Ag Trockenwickelbares resistsystem
JP2930971B2 (ja) * 1989-06-22 1999-08-09 株式会社東芝 パターン形成方法
DE59010864D1 (de) * 1990-04-12 1999-04-15 Siemens Ag Verfahren zur Erzeugung einer Resiststruktur
ES2090218T3 (es) * 1990-12-20 1996-10-16 Siemens Ag Generacion estructural fotolitografica.
DE59506534D1 (de) * 1994-05-25 1999-09-09 Siemens Ag Trockenentwickelbarer positivresist
CN115047728B (zh) * 2022-07-01 2025-04-08 中国科学院光电技术研究所 等离子体共振腔透镜光刻的成像结构保护方法及其结构

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
DE3170974D1 (en) * 1981-02-16 1985-07-25 Ibm Method for increasing the resistance of a solid material surface against etching

Also Published As

Publication number Publication date
EP0136130A2 (en) 1985-04-03
EP0136130A3 (en) 1985-11-06
JPS6085526A (ja) 1985-05-15
CA1248402A (en) 1989-01-10
KR850002672A (ko) 1985-05-15
JPH0340936B2 (es) 1991-06-20
DE3480666D1 (de) 1990-01-11
ES8800306A1 (es) 1987-11-16
EP0136130B1 (en) 1989-12-06
KR910006163B1 (ko) 1991-08-16

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