ES8401676A1 - Un dispositivo para registrar o visualizar imagenes. - Google Patents

Un dispositivo para registrar o visualizar imagenes.

Info

Publication number
ES8401676A1
ES8401676A1 ES516862A ES516862A ES8401676A1 ES 8401676 A1 ES8401676 A1 ES 8401676A1 ES 516862 A ES516862 A ES 516862A ES 516862 A ES516862 A ES 516862A ES 8401676 A1 ES8401676 A1 ES 8401676A1
Authority
ES
Spain
Prior art keywords
cathode
ray tube
semiconductor device
inter alia
result
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES516862A
Other languages
English (en)
Other versions
ES516862A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES8401676A1 publication Critical patent/ES8401676A1/es
Publication of ES516862A0 publication Critical patent/ES516862A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
    • H01J23/02—Electrodes; Magnetic control means; Screens
    • H01J23/06—Electron or ion guns
    • H01J23/065—Electron or ion guns producing a solid cylindrical beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/84—Traps for removing or diverting unwanted particles, e.g. negative ions, fringing electrons; Arrangements for velocity or mass selection

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

DISPOSITIVO PARA REGISTRAR O VISUALIZAR IMAGENES. COMPRENDE UN TUBO DE RAYOS CATODICOS (1), QUE TIENE, EN UNA AMPOLLA (2) CON VACIO INTERIOR, UN ANTICATODO (3) Y UN CATODO SEMICONDUCTOR (20), FORMANDO UN ANGULO (BAB) AGUDO LA NORMAL A LA SUPERFICIE PRINCIPAL (21) DEL CATODO Y EL EJE (12) DEL TUBO (1). EL CATODO (20) CONSTA DE UN CUERPO SEMICONDUCTOR, QUE COMPRENDE UNA UNION P-N, QUE GENERA ELECTRONES POR MULTIPLICACION DE AVALANCHA, POR APLICACION DE UNA TENSION EN SENTIDO INVERSO A TRAVES DE LA UNION P-N; OTRA REGION DE TIPO P, CON MAYOR CONCENTRACIONDE IMPUREZAS, CON EL FIN DE REDUCIR LA TENSION DE RUPTURA DE LA UNION P-N ANTERIOR, QUE FORMA UNA UNION P-N CON OTRA REGION DE TIPO N, Y QUE ESTA SITUADA EN UNA PRIMERA CAPA AISLANTE, SOBRE LA CUAL ESTA DISPUESTO UN ELECTRODO ACELERADOR; UNA SEGUNDA CAPA AISLANTE SOBRE LA CUAL ESTAN PRESENTES (DOS ELECTRODOS (32 Y 33) DE DEFLEXION, POR MEDIO DE LOS CUALES Y DEL ELECTRODO ACELERADOR SE GENERA UN CAMPO ELECTRICO CERCA DE LA SUPERFICIE SEMICONDUCTORA, QUE ONES A SEGUIR LA TRAYECTORIA INDICADA POR LA FLECHA (10) HASTA EL ANTICATODO (3).
ES516862A 1981-10-29 1982-10-27 Un dispositivo para registrar o visualizar imagenes. Granted ES516862A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8104893A NL8104893A (nl) 1981-10-29 1981-10-29 Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis.

Publications (2)

Publication Number Publication Date
ES8401676A1 true ES8401676A1 (es) 1983-12-01
ES516862A0 ES516862A0 (es) 1983-12-01

Family

ID=19838284

Family Applications (1)

Application Number Title Priority Date Filing Date
ES516862A Granted ES516862A0 (es) 1981-10-29 1982-10-27 Un dispositivo para registrar o visualizar imagenes.

Country Status (11)

Country Link
US (1) US4574216A (es)
JP (1) JPS5887731A (es)
CA (1) CA1194082A (es)
DE (1) DE3237891A1 (es)
ES (1) ES516862A0 (es)
FR (1) FR2515872B1 (es)
GB (1) GB2109156B (es)
HK (1) HK2886A (es)
IT (1) IT1155405B (es)
NL (1) NL8104893A (es)
SG (1) SG74585G (es)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4521900A (en) * 1982-10-14 1985-06-04 Imatron Associates Electron beam control assembly and method for a scanning electron beam computed tomography scanner
US4523316A (en) * 1982-10-29 1985-06-11 Rca Corporation Semiconductor laser with non-absorbing mirror facet
NL8304444A (nl) * 1983-12-27 1985-07-16 Philips Nv Beeldbuis.
NL8400297A (nl) * 1984-02-01 1985-09-02 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
DE3538175C2 (de) * 1984-11-21 1996-06-05 Philips Electronics Nv Halbleiteranordnung zum Erzeugen eines Elektronenstromes und ihre Verwendung
NL8403613A (nl) * 1984-11-28 1986-06-16 Philips Nv Elektronenbundelinrichting en halfgeleiderinrichting voor een dergelijke inrichting.
NL8500596A (nl) * 1985-03-04 1986-10-01 Philips Nv Inrichting voorzien van een halfgeleiderkathode.
US4763043A (en) * 1985-12-23 1988-08-09 Raytheon Company P-N junction semiconductor secondary emission cathode and tube
JP2760395B2 (ja) * 1986-06-26 1998-05-28 キヤノン株式会社 電子放出装置
JPS6313247A (ja) * 1986-07-04 1988-01-20 Canon Inc 電子放出装置およびその製造方法
DE3751781T2 (de) * 1986-08-12 1996-10-17 Canon Kk Festkörper-Elektronenstrahlerzeuger
GB8621600D0 (en) * 1986-09-08 1987-03-18 Gen Electric Co Plc Vacuum devices
JP2616918B2 (ja) * 1987-03-26 1997-06-04 キヤノン株式会社 表示装置
NL8700486A (nl) * 1987-02-27 1988-09-16 Philips Nv Weergeefinrichting.
JP2614241B2 (ja) * 1987-10-13 1997-05-28 キヤノン株式会社 電子線発生装置
NL8901075A (nl) * 1989-04-28 1990-11-16 Philips Nv Inrichting ten behoeve van elektronengeneratie en weergeefinrichting.
US5142193A (en) * 1989-06-06 1992-08-25 Kaman Sciences Corporation Photonic cathode ray tube
US5359257A (en) * 1990-12-03 1994-10-25 Bunch Kyle J Ballistic electron, solid state cathode
US5144191A (en) * 1991-06-12 1992-09-01 Mcnc Horizontal microelectronic field emission devices
DE69316960T2 (de) * 1992-11-12 1998-07-30 Koninkl Philips Electronics Nv Elektronenröhre mit Halbleiterkathode
EP0601637B1 (en) * 1992-12-08 1999-10-27 Koninklijke Philips Electronics N.V. Cathode ray tube comprising a semiconductor cathode
DE69329253T2 (de) * 1992-12-08 2000-12-14 Koninkl Philips Electronics Nv Kathodenstrahlröhre mit Halbleiterkathode.
JPH07254354A (ja) * 1994-01-28 1995-10-03 Toshiba Corp 電界電子放出素子、電界電子放出素子の製造方法およびこの電界電子放出素子を用いた平面ディスプレイ装置
US5686789A (en) * 1995-03-14 1997-11-11 Osram Sylvania Inc. Discharge device having cathode with micro hollow array
WO1997009732A1 (en) * 1995-09-04 1997-03-13 Philips Electronics N.V. Electron-optical device with means for protecting emitter from incident particles
US5825123A (en) * 1996-03-28 1998-10-20 Retsky; Michael W. Method and apparatus for deflecting a charged particle stream
JPH1012127A (ja) * 1996-06-24 1998-01-16 Nec Corp 電界電子放出装置
JP2001189121A (ja) * 2000-01-06 2001-07-10 Sony Corp 電子放出装置およびその製造方法
US7135821B2 (en) * 2003-10-01 2006-11-14 Altera Corporation High-definition cathode ray tube and electron gun
JP2010500713A (ja) * 2006-08-10 2010-01-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Ｘ線管及びｘ線管のイオン偏向及び収集機構の電圧供給の方法
FR2999796B1 (fr) * 2012-12-19 2015-01-30 Thales Sa Dispositif d'optique electronique

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2164555A (en) * 1937-06-19 1939-07-04 Rca Corp Cathode ray tube
NL185006B (nl) * 1953-02-13 Sentralinst For Ind Forskning Bestuurbaar onderstel.
BE549199A (es) * 1955-09-01
NL150609B (nl) * 1965-04-22 1976-08-16 Philips Nv Inrichting voor het opwekken van een elektronenstroom.
CA927468A (en) * 1968-08-12 1973-05-29 E. Simon Ralph Negative effective electron affinity emitters with drift fields using deep acceptor doping
BE794167A (fr) * 1972-01-19 1973-07-17 Philips Nv Tube cathodique
US3909119A (en) * 1974-02-06 1975-09-30 Westinghouse Electric Corp Guarded planar PN junction semiconductor device
US4160188A (en) * 1976-04-23 1979-07-03 The United States Of America As Represented By The Secretary Of The Navy Electron beam tube
JPS53121454A (en) * 1977-03-31 1978-10-23 Toshiba Corp Electron source of thin film electric field emission type and its manufacture
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.

Also Published As

Publication number Publication date
FR2515872B1 (fr) 1985-07-19
DE3237891A1 (de) 1983-05-11
GB2109156B (en) 1985-06-19
IT8223934A0 (it) 1982-10-26
GB2109156A (en) 1983-05-25
HK2886A (en) 1986-01-24
ES516862A0 (es) 1983-12-01
IT1155405B (it) 1987-01-28
SG74585G (en) 1986-11-21
US4574216A (en) 1986-03-04
JPS5887731A (ja) 1983-05-25
NL8104893A (nl) 1983-05-16
CA1194082A (en) 1985-09-24
FR2515872A1 (fr) 1983-05-06
JPH0326493B2 (es) 1991-04-11

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