ES535239A0 - Un circuito integrado fotodetector - Google Patents
Un circuito integrado fotodetectorInfo
- Publication number
- ES535239A0 ES535239A0 ES535239A ES535239A ES535239A0 ES 535239 A0 ES535239 A0 ES 535239A0 ES 535239 A ES535239 A ES 535239A ES 535239 A ES535239 A ES 535239A ES 535239 A0 ES535239 A0 ES 535239A0
- Authority
- ES
- Spain
- Prior art keywords
- photodetector circuit
- integrated photodetector
- integrated
- circuit
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08322236A GB2145279B (en) | 1983-08-18 | 1983-08-18 | Photodetector integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
ES535239A0 true ES535239A0 (es) | 1985-11-16 |
ES8603113A1 ES8603113A1 (es) | 1985-11-16 |
Family
ID=10547489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES535239A Expired ES8603113A1 (es) | 1983-08-18 | 1984-08-17 | Un circuito integrado fotodetector |
Country Status (6)
Country | Link |
---|---|
US (1) | US4636829A (es) |
EP (1) | EP0133709A3 (es) |
JP (1) | JPS60106183A (es) |
KR (1) | KR850002178A (es) |
ES (1) | ES8603113A1 (es) |
GB (1) | GB2145279B (es) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2145558A (en) * | 1983-08-23 | 1985-03-27 | Standard Telephones Cables Ltd | Field effect transistor |
US5268309A (en) * | 1984-09-01 | 1993-12-07 | Canon Kabushiki Kaisha | Method for manufacturing a photosensor |
JPS6161457A (ja) * | 1984-09-01 | 1986-03-29 | Canon Inc | 光センサおよびその製造方法 |
US4771325A (en) * | 1985-02-11 | 1988-09-13 | American Telephone & Telegraph Co., At&T Bell Laboratories | Integrated photodetector-amplifier device |
US4745446A (en) * | 1985-02-11 | 1988-05-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Photodetector and amplifier integration |
GB2172742B (en) * | 1985-03-21 | 1988-08-24 | Stc Plc | Photoconductor |
JPS62159477A (ja) * | 1986-01-08 | 1987-07-15 | Fujitsu Ltd | 光半導体装置 |
JPS62190779A (ja) * | 1986-02-18 | 1987-08-20 | Nippon Telegr & Teleph Corp <Ntt> | 集積形受光器 |
DE3751243T2 (de) * | 1986-02-18 | 1995-08-31 | Toshiba Kawasaki Kk | Opto-elektronisches Bauelement und Verfahren zu seiner Herstellung. |
DE3706252A1 (de) * | 1986-02-28 | 1987-09-03 | Canon Kk | Halbleiterfotosensor |
DE3606471A1 (de) * | 1986-02-28 | 1987-09-03 | Standard Elektrik Lorenz Ag | Monolithisch integriert aufgebaute eingangsstufe eines optischen empfaengers |
US4833512A (en) * | 1986-04-11 | 1989-05-23 | Itt Gallium Arsenide Technology Center, A Division Of Itt Corporation | Heterojunction photo-detector with transparent gate |
JPS6351681A (ja) * | 1986-08-20 | 1988-03-04 | Agency Of Ind Science & Technol | 半導体装置 |
DE3629684A1 (de) * | 1986-09-01 | 1988-03-10 | Licentia Gmbh | Photoempfaenger |
DE3629685C2 (de) * | 1986-09-01 | 2000-08-10 | Daimler Chrysler Ag | Photoempfänger |
DE3629681A1 (de) * | 1986-09-01 | 1988-03-10 | Licentia Gmbh | Photoempfaenger |
DE3712864C2 (de) * | 1986-09-01 | 2001-05-17 | Daimler Chrysler Ag | Monolithisch integrierter Photoempfänger |
DE3644410A1 (de) * | 1986-12-24 | 1988-07-07 | Licentia Gmbh | Photoempfaenger |
DE3644408A1 (de) * | 1986-12-24 | 1988-07-07 | Licentia Gmbh | Photoempfaenger |
DE3709301C2 (de) * | 1987-03-20 | 2001-12-06 | Daimler Chrysler Ag | Monolithisch integrierte Senderanordnung |
DE3711617A1 (de) * | 1987-04-07 | 1988-10-27 | Siemens Ag | Monolithisch integrierte wellenleiter-fotodioden-fet-kombination |
DE3903699A1 (de) * | 1988-02-08 | 1989-08-17 | Ricoh Kk | Bildsensor |
US5170228A (en) * | 1988-02-29 | 1992-12-08 | Sumitomo Electric Industries, Ltd. | Opto-electronic integrated circuit |
US4996163A (en) * | 1988-02-29 | 1991-02-26 | Sumitomo Electric Industries, Ltd. | Method for producing an opto-electronic integrated circuit |
FR2634066A1 (fr) * | 1988-07-05 | 1990-01-12 | Thomson Csf | Dispositif optoelectronique realise en optique integree et procede de realisation |
EP0400399A3 (de) * | 1989-05-31 | 1991-05-29 | Siemens Aktiengesellschaft | Monolithisch integrierte Photodiode-FET-Kombination |
EP0405214A3 (en) * | 1989-06-27 | 1991-06-05 | Siemens Aktiengesellschaft | Pin-fet combination with buried p-type layer |
ES2078863B1 (es) * | 1993-09-10 | 1996-08-01 | Telefonica Nacional Espana Co | Cabeza optica fotodetectora. |
US6407440B1 (en) | 2000-02-25 | 2002-06-18 | Micron Technology Inc. | Pixel cell with high storage capacitance for a CMOS imager |
US6583469B1 (en) | 2002-01-28 | 2003-06-24 | International Business Machines Corporation | Self-aligned dog-bone structure for FinFET applications and methods to fabricate the same |
JP4453561B2 (ja) * | 2005-01-26 | 2010-04-21 | パナソニック電工株式会社 | タイマスイッチ |
KR101371401B1 (ko) * | 2010-11-03 | 2014-03-10 | 한국전자통신연구원 | 애벌런치 광다이오드 및 그 형성방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2048181A1 (de) * | 1970-09-30 | 1972-04-06 | Siemens Ag | Fototransistor |
EP0067566A3 (en) * | 1981-06-13 | 1985-08-07 | Plessey Overseas Limited | Integrated light detection or generation means and amplifying means |
DE3135462A1 (de) * | 1981-09-08 | 1983-09-01 | AEG-Telefunken Nachrichtentechnik GmbH, 7150 Backnang | Monolithische eingangsstufe eines optischen empfaengers |
GB2109991B (en) * | 1981-11-17 | 1985-05-15 | Standard Telephones Cables Ltd | Photodetector |
US4442445A (en) * | 1981-11-23 | 1984-04-10 | The United States Of America As Represented By The Secretary Of The Army | Planar doped barrier gate field effect transistor |
US4517581A (en) * | 1982-11-16 | 1985-05-14 | Itt Industries, Inc. | Photodetector |
-
1983
- 1983-08-18 GB GB08322236A patent/GB2145279B/en not_active Expired
-
1984
- 1984-08-11 EP EP84109598A patent/EP0133709A3/en not_active Withdrawn
- 1984-08-16 JP JP59170096A patent/JPS60106183A/ja active Pending
- 1984-08-16 US US06/641,881 patent/US4636829A/en not_active Expired - Fee Related
- 1984-08-17 ES ES535239A patent/ES8603113A1/es not_active Expired
- 1984-08-18 KR KR1019840004981A patent/KR850002178A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
GB8322236D0 (en) | 1983-09-21 |
JPS60106183A (ja) | 1985-06-11 |
US4636829A (en) | 1987-01-13 |
GB2145279A (en) | 1985-03-20 |
EP0133709A2 (en) | 1985-03-06 |
GB2145279B (en) | 1987-10-21 |
KR850002178A (ko) | 1985-05-06 |
EP0133709A3 (en) | 1985-07-10 |
ES8603113A1 (es) | 1985-11-16 |
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