GB2109991B - Photodetector - Google Patents
PhotodetectorInfo
- Publication number
- GB2109991B GB2109991B GB08134636A GB8134636A GB2109991B GB 2109991 B GB2109991 B GB 2109991B GB 08134636 A GB08134636 A GB 08134636A GB 8134636 A GB8134636 A GB 8134636A GB 2109991 B GB2109991 B GB 2109991B
- Authority
- GB
- United Kingdom
- Prior art keywords
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1127—Devices with PN heterojunction gate
- H01L31/1129—Devices with PN heterojunction gate the device being a field-effect phototransistor
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08134636A GB2109991B (en) | 1981-11-17 | 1981-11-17 | Photodetector |
NZ20277582A NZ202775A (en) | 1981-11-17 | 1982-11-10 | Junction field effect transistor photodetector |
AU90474/82A AU548183B2 (en) | 1981-11-17 | 1982-11-15 | Junction field effect transistor photodetector |
FR8219265A FR2516707B1 (en) | 1981-11-17 | 1982-11-17 | SEMICONDUCTOR PHOTOELECTRIC DETECTOR OF THE PIN-FET TYPE |
CH669882A CH659543A5 (en) | 1981-11-17 | 1982-11-17 | BARRIER LAYER FIELD EFFECT TRANSISTOR PHOTODETECTOR FOR LIGHT CONDUCTOR SYSTEMS. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08134636A GB2109991B (en) | 1981-11-17 | 1981-11-17 | Photodetector |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2109991A GB2109991A (en) | 1983-06-08 |
GB2109991B true GB2109991B (en) | 1985-05-15 |
Family
ID=10525944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08134636A Expired GB2109991B (en) | 1981-11-17 | 1981-11-17 | Photodetector |
Country Status (5)
Country | Link |
---|---|
AU (1) | AU548183B2 (en) |
CH (1) | CH659543A5 (en) |
FR (1) | FR2516707B1 (en) |
GB (1) | GB2109991B (en) |
NZ (1) | NZ202775A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2145279B (en) * | 1983-08-18 | 1987-10-21 | Standard Telephones Cables Ltd | Photodetector integrated circuit |
EP0160377A1 (en) * | 1984-03-28 | 1985-11-06 | International Standard Electric Corporation | Heterojunction photo-FET and method of making the same |
US4706103A (en) * | 1985-06-17 | 1987-11-10 | Hughes Aircraft Company | Bipolar electrode scheme for electro-optic semiconductor waveguide devices |
AU609508B2 (en) * | 1987-08-20 | 1991-05-02 | Canon Kabushiki Kaisha | Photosensor device |
US5122851A (en) * | 1989-04-03 | 1992-06-16 | Grumman Aerospace Corporation | Trench JFET integrated circuit elements |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2226754B1 (en) * | 1973-04-20 | 1975-08-22 | Thomson Csf |
-
1981
- 1981-11-17 GB GB08134636A patent/GB2109991B/en not_active Expired
-
1982
- 1982-11-10 NZ NZ20277582A patent/NZ202775A/en unknown
- 1982-11-15 AU AU90474/82A patent/AU548183B2/en not_active Ceased
- 1982-11-17 CH CH669882A patent/CH659543A5/en not_active IP Right Cessation
- 1982-11-17 FR FR8219265A patent/FR2516707B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2109991A (en) | 1983-06-08 |
FR2516707A1 (en) | 1983-05-20 |
NZ202775A (en) | 1985-07-12 |
AU548183B2 (en) | 1985-11-28 |
AU9047482A (en) | 1983-05-26 |
CH659543A5 (en) | 1987-01-30 |
FR2516707B1 (en) | 1986-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19931117 |