ES476750A1 - Un dispositivo emisor de luz infrarroja mejorada. - Google Patents
Un dispositivo emisor de luz infrarroja mejorada.Info
- Publication number
- ES476750A1 ES476750A1 ES476750A ES476750A ES476750A1 ES 476750 A1 ES476750 A1 ES 476750A1 ES 476750 A ES476750 A ES 476750A ES 476750 A ES476750 A ES 476750A ES 476750 A1 ES476750 A1 ES 476750A1
- Authority
- ES
- Spain
- Prior art keywords
- light emissive
- red light
- infra red
- confinement
- emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
Un dispositivo emisor de luz infrarroja mejorado con una región activa de emisión de luz de material de la solución sólida ternaria In (Sb, As) teniendo una separación reticular adaptada a la de Ga Sb, cuyo material es obtenido por crecimiento epitaxial directa o indirectamente sobre un substrato de Ga Sb.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB97978A GB1585723A (en) | 1978-01-11 | 1978-01-11 | Infra-red light emissive devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ES476750A1 true ES476750A1 (es) | 1979-07-16 |
Family
ID=9713900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES476750A Expired ES476750A1 (es) | 1978-01-11 | 1979-01-11 | Un dispositivo emisor de luz infrarroja mejorada. |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0003079B1 (es) |
JP (1) | JPS5498585A (es) |
AU (1) | AU522403B2 (es) |
CH (1) | CH645479A5 (es) |
DE (1) | DE2860593D1 (es) |
ES (1) | ES476750A1 (es) |
GB (1) | GB1585723A (es) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0608674A1 (en) * | 1993-01-26 | 1994-08-03 | Interuniversitair Microelektronica Centrum Vzw | InAsSb light emitting diodes |
US6813296B2 (en) | 2002-04-25 | 2004-11-02 | Massachusetts Institute Of Technology | GaSb-clad mid-infrared semiconductor laser |
JP2007266174A (ja) * | 2006-03-28 | 2007-10-11 | Kyocera Corp | 発光装置 |
EA018300B1 (ru) * | 2012-09-07 | 2013-06-28 | Ооо "Лед Микросенсор Нт" | ГЕТЕРОСТРУКТУРА НА ОСНОВЕ ТВЁРДОГО РАСТВОРА GaInAsSb, СПОСОБ ЕЁ ИЗГОТОВЛЕНИЯ И СВЕТОДИОД НА ОСНОВЕ ЭТОЙ ГЕТЕРОСТРУКТУРЫ |
JP6908367B2 (ja) * | 2016-10-19 | 2021-07-28 | 旭化成エレクトロニクス株式会社 | 赤外線発光素子 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2042517A1 (de) * | 1970-08-27 | 1972-03-02 | Pilkuhn M | Halbleiterlaser |
JPS5320881A (en) * | 1976-08-11 | 1978-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Photo semiconductor device |
-
1978
- 1978-01-11 GB GB97978A patent/GB1585723A/en not_active Expired
- 1978-12-18 AU AU42645/78A patent/AU522403B2/en not_active Expired
- 1978-12-19 DE DE7878300858T patent/DE2860593D1/de not_active Expired
- 1978-12-19 EP EP19780300858 patent/EP0003079B1/en not_active Expired
- 1978-12-26 JP JP16449478A patent/JPS5498585A/ja active Granted
-
1979
- 1979-01-11 CH CH23779A patent/CH645479A5/de not_active IP Right Cessation
- 1979-01-11 ES ES476750A patent/ES476750A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0003079B1 (en) | 1981-04-01 |
JPS5498585A (en) | 1979-08-03 |
AU522403B2 (en) | 1982-06-03 |
CH645479A5 (de) | 1984-09-28 |
GB1585723A (en) | 1981-03-11 |
DE2860593D1 (en) | 1981-04-23 |
JPS5726438B2 (es) | 1982-06-04 |
EP0003079A1 (en) | 1979-07-25 |
AU4264578A (en) | 1979-07-19 |
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