ES474421A1 - Un dispositivo semiconductor de alto rendimiento. - Google Patents

Un dispositivo semiconductor de alto rendimiento.

Info

Publication number
ES474421A1
ES474421A1 ES474421A ES474421A ES474421A1 ES 474421 A1 ES474421 A1 ES 474421A1 ES 474421 A ES474421 A ES 474421A ES 474421 A ES474421 A ES 474421A ES 474421 A1 ES474421 A1 ES 474421A1
Authority
ES
Spain
Prior art keywords
region
collector
emitter
base
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES474421A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of ES474421A1 publication Critical patent/ES474421A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0143—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising concurrently refilling multiple trenches having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4451—Semiconductor materials, e.g. polysilicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/131—Reactive ion etching rie

Landscapes

  • Bipolar Transistors (AREA)
ES474421A 1977-10-25 1978-10-23 Un dispositivo semiconductor de alto rendimiento. Expired ES474421A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/844,769 US4160991A (en) 1977-10-25 1977-10-25 High performance bipolar device and method for making same

Publications (1)

Publication Number Publication Date
ES474421A1 true ES474421A1 (es) 1979-04-16

Family

ID=25293582

Family Applications (1)

Application Number Title Priority Date Filing Date
ES474421A Expired ES474421A1 (es) 1977-10-25 1978-10-23 Un dispositivo semiconductor de alto rendimiento.

Country Status (9)

Country Link
US (1) US4160991A (https=)
EP (1) EP0001550B1 (https=)
JP (1) JPS5466076A (https=)
AU (1) AU517690B2 (https=)
BR (1) BR7806949A (https=)
CA (1) CA1097825A (https=)
DE (1) DE2861136D1 (https=)
ES (1) ES474421A1 (https=)
IT (1) IT1159126B (https=)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
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US4277883A (en) * 1977-12-27 1981-07-14 Raytheon Company Integrated circuit manufacturing method
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
US4209349A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US4209350A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming diffusions having narrow dimensions utilizing reactive ion etching
US4269636A (en) * 1978-12-29 1981-05-26 Harris Corporation Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking
US4214315A (en) * 1979-03-16 1980-07-22 International Business Machines Corporation Method for fabricating vertical NPN and PNP structures and the resulting product
US4238278A (en) * 1979-06-14 1980-12-09 International Business Machines Corporation Polycrystalline silicon oxidation method for making shallow and deep isolation trenches
US4338622A (en) * 1979-06-29 1982-07-06 International Business Machines Corporation Self-aligned semiconductor circuits and process therefor
US4252582A (en) * 1980-01-25 1981-02-24 International Business Machines Corporation Self aligned method for making bipolar transistor having minimum base to emitter contact spacing
US4309812A (en) * 1980-03-03 1982-01-12 International Business Machines Corporation Process for fabricating improved bipolar transistor utilizing selective etching
US4318751A (en) * 1980-03-13 1982-03-09 International Business Machines Corporation Self-aligned process for providing an improved high performance bipolar transistor
US4319932A (en) * 1980-03-24 1982-03-16 International Business Machines Corporation Method of making high performance bipolar transistor with polysilicon base contacts
US4259680A (en) * 1980-04-17 1981-03-31 Bell Telephone Laboratories, Incorporated High speed lateral bipolar transistor
US4339767A (en) * 1980-05-05 1982-07-13 International Business Machines Corporation High performance PNP and NPN transistor structure
US4758528A (en) * 1980-07-08 1988-07-19 International Business Machines Corporation Self-aligned metal process for integrated circuit metallization
US4691219A (en) * 1980-07-08 1987-09-01 International Business Machines Corporation Self-aligned polysilicon base contact structure
US4409722A (en) * 1980-08-29 1983-10-18 International Business Machines Corporation Borderless diffusion contact process and structure
US4484211A (en) * 1981-02-04 1984-11-20 Matsushita Electric Industrial Co., Ltd. Oxide walled emitter
US4508579A (en) * 1981-03-30 1985-04-02 International Business Machines Corporation Lateral device structures using self-aligned fabrication techniques
US4437897A (en) 1982-05-18 1984-03-20 International Business Machines Corporation Fabrication process for a shallow emitter/base transistor using same polycrystalline layer
DE3277343D1 (en) * 1982-06-14 1987-10-22 Ibm Deutschland Method of adjusting the edge angle in polysilicon
US4464825A (en) * 1983-02-17 1984-08-14 Harris Corporation Process for fabrication of high-speed radiation hard bipolar semiconductor devices
JPS6038873A (ja) * 1983-08-11 1985-02-28 Rohm Co Ltd 半導体装置の製造方法
US4656050A (en) * 1983-11-30 1987-04-07 International Business Machines Corporation Method of producing electronic components utilizing cured vinyl and/or acetylene terminated copolymers
DE3586341T2 (de) * 1984-02-03 1993-02-04 Advanced Micro Devices Inc Bipolartransistor mit in schlitzen gebildeten aktiven elementen.
US4609934A (en) * 1984-04-06 1986-09-02 Advanced Micro Devices, Inc. Semiconductor device having grooves of different depths for improved device isolation
JPS6146063A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置の製造方法
US4574469A (en) * 1984-09-14 1986-03-11 Motorola, Inc. Process for self-aligned buried layer, channel-stop, and isolation
US4583282A (en) * 1984-09-14 1986-04-22 Motorola, Inc. Process for self-aligned buried layer, field guard, and isolation
US4568601A (en) * 1984-10-19 1986-02-04 International Business Machines Corporation Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures
JPH0658912B2 (ja) * 1985-05-07 1994-08-03 日本電信電話株式会社 バイポーラトランジスタの製造方法
US4711017A (en) * 1986-03-03 1987-12-08 Trw Inc. Formation of buried diffusion devices
US4910575A (en) * 1986-06-16 1990-03-20 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit and its manufacturing method
JPH0760809B2 (ja) * 1987-09-08 1995-06-28 日本電気株式会社 半導体装置の製造方法
GR1000174B (el) * 1989-10-20 1991-12-10 Minas Iosifidis Επιφανειες εφαρμογης κρεμαστων επιχρισματων.
US5159429A (en) * 1990-01-23 1992-10-27 International Business Machines Corporation Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same
DE4309898B4 (de) * 1992-03-30 2005-11-03 Rohm Co. Ltd. Verfahren zur Herstellung eines Bipolartransistors mit einer Polysiliziumschicht zwischen einem Halbleiterbereich und einem Oberflächenelektrodenmetall
JP3311044B2 (ja) * 1992-10-27 2002-08-05 株式会社東芝 半導体装置の製造方法
US5294558A (en) * 1993-06-01 1994-03-15 International Business Machines Corporation Method of making double-self-aligned bipolar transistor structure
WO1996024160A2 (en) * 1995-01-30 1996-08-08 Philips Electronics N.V. Method of manufacturing a semiconductor device with a semiconductor body with field insulation regions provided with recessed connection conductors
US6063699A (en) * 1998-08-19 2000-05-16 International Business Machines Corporation Methods for making high-aspect ratio holes in semiconductor and its application to a gate damascene process for sub- 0.05 micron mosfets
US7635059B1 (en) 2000-02-02 2009-12-22 Imonex Services, Inc. Apparatus and method for rejecting jammed coins
JP6729999B2 (ja) * 2015-02-16 2020-07-29 富士電機株式会社 半導体装置
US11094806B2 (en) * 2017-12-29 2021-08-17 Texas Instruments Incorporated Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1457139A (en) * 1973-09-27 1976-12-01 Hitachi Ltd Method of manufacturing semiconductor device
JPS5242670B2 (https=) * 1973-12-12 1977-10-26
JPS5215262A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacturing method
JPS52117579A (en) * 1976-03-30 1977-10-03 Nec Corp Semiconductor device
JPS5427774A (en) * 1977-08-03 1979-03-02 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
EP0001550A1 (de) 1979-05-02
DE2861136D1 (en) 1981-12-17
IT1159126B (it) 1987-02-25
US4160991A (en) 1979-07-10
EP0001550B1 (de) 1981-10-07
AU3844878A (en) 1980-01-31
CA1097825A (en) 1981-03-17
BR7806949A (pt) 1979-05-15
AU517690B2 (en) 1981-08-20
JPS62588B2 (https=) 1987-01-08
IT7828121A0 (it) 1978-09-27
JPS5466076A (en) 1979-05-28

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19971103