ES419651A1 - A method for dividing a fragile monocrystal body. (Machine-translation by Google Translate, not legally binding) - Google Patents

A method for dividing a fragile monocrystal body. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES419651A1
ES419651A1 ES419651A ES419651A ES419651A1 ES 419651 A1 ES419651 A1 ES 419651A1 ES 419651 A ES419651 A ES 419651A ES 419651 A ES419651 A ES 419651A ES 419651 A1 ES419651 A1 ES 419651A1
Authority
ES
Spain
Prior art keywords
planes
translation
dividing
machine
legally binding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES419651A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of ES419651A1 publication Critical patent/ES419651A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Weting (AREA)
  • Silicon Compounds (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

A method of dividing a brittle, monocrystalline body having a surface practically parallel to the crystallographic planes (100) in the body, into a plurality of pieces, comprising forming on the surface a chemical etch resistant masking coating comprising a arrangement of rectangles having their sides parallel to the crystallographic planes (111) in the body, the receptacles being arranged in rows and columns and separated from each other by a predetermined distance, whereby a portion of the surface is exposed in a pattern of rectangular grid, apply to the exposed portion of the surface an anisotropic chemical etching substance to form exposed planes that extend at angles to the surface, planes intercepting on a plane separated from the surface by a distance less than the thickness of the body and straining the body so that the adjacent body portion the surface is in tension with sufficient force to separate the body at the intersection of the planes. (Machine-translation by Google Translate, not legally binding)
ES419651A 1970-09-30 1973-10-15 A method for dividing a fragile monocrystal body. (Machine-translation by Google Translate, not legally binding) Expired ES419651A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7677770A 1970-09-30 1970-09-30

Publications (1)

Publication Number Publication Date
ES419651A1 true ES419651A1 (en) 1976-05-16

Family

ID=22134121

Family Applications (2)

Application Number Title Priority Date Filing Date
ES395341A Expired ES395341A1 (en) 1970-09-30 1971-09-23 A method for breaking a body of monocrystalline, fragile material. (Machine-translation by Google Translate, not legally binding)
ES419651A Expired ES419651A1 (en) 1970-09-30 1973-10-15 A method for dividing a fragile monocrystal body. (Machine-translation by Google Translate, not legally binding)

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES395341A Expired ES395341A1 (en) 1970-09-30 1971-09-23 A method for breaking a body of monocrystalline, fragile material. (Machine-translation by Google Translate, not legally binding)

Country Status (9)

Country Link
JP (1) JPS5010095B1 (en)
BE (1) BE773286A (en)
CA (1) CA926035A (en)
DE (1) DE2147703A1 (en)
ES (2) ES395341A1 (en)
FR (1) FR2108602A5 (en)
GB (1) GB1297235A (en)
NL (1) NL7113366A (en)
SE (1) SE382772B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284893A (en) * 1975-12-30 1977-07-14 Matsushita Electric Works Ltd Shoulder patting device circuit configuration
JPS5284894A (en) * 1975-12-30 1977-07-14 Matsushita Electric Works Ltd Shoulder patting device circuit configuration
JP4515790B2 (en) * 2004-03-08 2010-08-04 株式会社東芝 Semiconductor device manufacturing method and manufacturing apparatus thereof

Also Published As

Publication number Publication date
SE382772B (en) 1976-02-16
BE773286A (en) 1972-01-17
GB1297235A (en) 1972-11-22
FR2108602A5 (en) 1972-05-19
ES395341A1 (en) 1974-12-16
JPS5010095B1 (en) 1975-04-18
AU3334071A (en) 1973-03-15
NL7113366A (en) 1972-04-05
CA926035A (en) 1973-05-08
DE2147703A1 (en) 1972-04-06

Similar Documents

Publication Publication Date Title
ATE12007T1 (en) DEVICE WITH INCREASED RESTORABILITY MADE OF SHAPE MEMORY METAL.
IT1053650B (en) PLATE SILICON CRYSTALS AND PROCESS TO PRODUCE THEM
JPS5293285A (en) Structure for semiconductor device
GB1122489A (en) Method of diffusing material into a substrate
ES419651A1 (en) A method for dividing a fragile monocrystal body. (Machine-translation by Google Translate, not legally binding)
GB1487201A (en) Method of manufacturing semi-conductor devices
GB1355890A (en) Contacts for solar cells
JPS51135383A (en) Semiconductor variable capacitance device
JPS526465A (en) Manufacturing method of semi-conductor pellet slices for integrated ci rcuit
JPS5333053A (en) Production of semiconductor device
IE34051L (en) Subdividing semiconductor wafers
JPS53111586A (en) Method of deviding thin plate
GB960257A (en) Improvements in or relating to methods of manufacturing grid plates
JPS5228879A (en) Semiconductor device and method for its production
JPS5211762A (en) Method of manufacturing semiconductor devices
FR2307374A1 (en) Hyper frequency diodes made from thin semiconductor strips - are fabricated using photogravure process to produce ridged surface
JPS5680174A (en) Semiconductor pressure transducer
JPS51150984A (en) Dielectric isolation method
JPS5217768A (en) Production method of semi-conductor device
JPS51132085A (en) Manufacturing method of semiconductor device
JPS55145360A (en) Semiconductor device
JPS5261475A (en) Production of silicon crystal film
JPS5212579A (en) Ion injection method and ion injector
JPS51126047A (en) Growth device for semi-conductor crystals
JPS5244163A (en) Process for productin of semiconductor element