GB1297235A - - Google Patents

Info

Publication number
GB1297235A
GB1297235A GB1297235DA GB1297235A GB 1297235 A GB1297235 A GB 1297235A GB 1297235D A GB1297235D A GB 1297235DA GB 1297235 A GB1297235 A GB 1297235A
Authority
GB
United Kingdom
Prior art keywords
wafer
etching
sept
break
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1297235A publication Critical patent/GB1297235A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

Abstract

1297235 Splitting RCA CORPORATION 23 Sept 1971 [30 Sept 1970] 44458/71 Heading B5E [Also in Division B6] A method of breaking a body of brittle, monocrystalline material comprises anisotropically etching a groove in a surface of the body, and stressing the body to break it along the groove. The body may be in the form of a crystalline wafer 10 of silicon and may contain diffused regions, a passivating coating and interconnection metallization defining a plurality of semi-conductor devices. The surface 12 is substantially parallel to the (100) crystal planes so that an anisotropic etchant will proceed at the greatest rate normal to the surface. The surface is coated with an etchant resistant masking comprising a plurality of rectangular blocks 14 spaced apart to expose narrow portions of the surface. The etching substance may comprise an amine, such as hydrozine, ethylene diamine, or a caustic substance, such as a mixture of water, sodium hydroxide and alcohol, gallium arsenide and gallium mixed with hydrofluoric acid, nitric acid and water. The etching causes V-shaped grooves to be formed in the wafer having edges bounded by the (111) planes. Thereafter, the wafer is stressed so as to break it along the lines of the grooves.
GB1297235D 1970-09-30 1971-09-23 Expired GB1297235A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7677770A 1970-09-30 1970-09-30

Publications (1)

Publication Number Publication Date
GB1297235A true GB1297235A (en) 1972-11-22

Family

ID=22134121

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1297235D Expired GB1297235A (en) 1970-09-30 1971-09-23

Country Status (9)

Country Link
JP (1) JPS5010095B1 (en)
BE (1) BE773286A (en)
CA (1) CA926035A (en)
DE (1) DE2147703A1 (en)
ES (2) ES395341A1 (en)
FR (1) FR2108602A5 (en)
GB (1) GB1297235A (en)
NL (1) NL7113366A (en)
SE (1) SE382772B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1667798B (en) * 2004-03-08 2011-11-02 株式会社东芝 Method and apparatus for cleaving a wafer, method and apparatus for manufacturing semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284894A (en) * 1975-12-30 1977-07-14 Matsushita Electric Works Ltd Shoulder patting device circuit configuration
JPS5284893A (en) * 1975-12-30 1977-07-14 Matsushita Electric Works Ltd Shoulder patting device circuit configuration

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1667798B (en) * 2004-03-08 2011-11-02 株式会社东芝 Method and apparatus for cleaving a wafer, method and apparatus for manufacturing semiconductor device

Also Published As

Publication number Publication date
SE382772B (en) 1976-02-16
JPS5010095B1 (en) 1975-04-18
CA926035A (en) 1973-05-08
BE773286A (en) 1972-01-17
NL7113366A (en) 1972-04-05
FR2108602A5 (en) 1972-05-19
ES395341A1 (en) 1974-12-16
ES419651A1 (en) 1976-05-16
DE2147703A1 (en) 1972-04-06
AU3334071A (en) 1973-03-15

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees