ES409423A1 - Una disposicion de circuito de proteccion contra sobreten- siones. - Google Patents
Una disposicion de circuito de proteccion contra sobreten- siones.Info
- Publication number
- ES409423A1 ES409423A1 ES409423A ES409423A ES409423A1 ES 409423 A1 ES409423 A1 ES 409423A1 ES 409423 A ES409423 A ES 409423A ES 409423 A ES409423 A ES 409423A ES 409423 A1 ES409423 A1 ES 409423A1
- Authority
- ES
- Spain
- Prior art keywords
- collector junction
- bipolar transistor
- protection circuit
- lateral bipolar
- over voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000003989 dielectric material Substances 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Thyristors (AREA)
Abstract
Una disposición de circuito de protección contra sobretensiones, conectado entre un punto de un potencial fijo y un punto del circuito a proteger contra aumentos de tensión que superen un valor predeterminado con respecto a dicha masa, comprendiendo dicho circuito de protección, un transistor bipolar de unión lateral que tiene zonas de colector y de emisor separadas por una zona de base que forma parte de un sustrato semiconductor en el que está formado dicho transistor; estando cubiertas la unión de colector y la citada zona de base de dicho transistor por una capa aislante , estando separadas dichas zonas de colector y de emisor por dicha zona de base en una distancia que permite la acción sustancial del transistor cuando dicha unión de colector es polarizada en sentido inverso y la unión de emisor de dicho transistor está polarizada en sentido directo, un primer miembro conductor sobre dicha capa aislante en la posición de dicha unión de colector, estableciendo dicho primer miembro conductor contacto eléctrico con dicha área o zona de emisor, con dicho sustrato y con dicho punto de potencial fijo, y estableciendo un segundo miembro conductor contacto eléctrico con el citado punto del circuito a proteger y con dicha región de colector de dicho transistor.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20636171A | 1971-12-09 | 1971-12-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES409423A1 true ES409423A1 (es) | 1975-12-16 |
Family
ID=22766028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES409423A Expired ES409423A1 (es) | 1971-12-09 | 1972-12-07 | Una disposicion de circuito de proteccion contra sobreten- siones. |
Country Status (11)
Country | Link |
---|---|
US (1) | US3787717A (es) |
JP (1) | JPS5324157B2 (es) |
CA (1) | CA954233A (es) |
CH (1) | CH542536A (es) |
DE (1) | DE2257846C3 (es) |
ES (1) | ES409423A1 (es) |
FR (1) | FR2162365B1 (es) |
GB (1) | GB1337220A (es) |
IT (1) | IT969827B (es) |
NL (1) | NL7215143A (es) |
SE (1) | SE374840B (es) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5431671B2 (es) * | 1973-03-14 | 1979-10-08 | ||
FR2289051A1 (fr) * | 1974-10-22 | 1976-05-21 | Ibm | Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions |
JPS5930539Y2 (ja) * | 1975-06-14 | 1984-08-31 | 富士通株式会社 | 半導体装置 |
JPS526470U (es) * | 1975-06-30 | 1977-01-18 | ||
JPS5286372U (es) * | 1975-12-24 | 1977-06-28 | ||
NL176322C (nl) * | 1976-02-24 | 1985-03-18 | Philips Nv | Halfgeleiderinrichting met beveiligingsschakeling. |
US4053915A (en) * | 1976-03-22 | 1977-10-11 | Motorola, Inc. | Temperature compensated constant current source device |
US4100561A (en) * | 1976-05-24 | 1978-07-11 | Rca Corp. | Protective circuit for MOS devices |
US4072976A (en) * | 1976-12-28 | 1978-02-07 | Hughes Aircraft Company | Gate protection device for MOS circuits |
US4276555A (en) * | 1978-07-13 | 1981-06-30 | International Business Machines Corporation | Controlled avalanche voltage transistor and magnetic sensor |
US4264941A (en) * | 1979-02-14 | 1981-04-28 | National Semiconductor Corporation | Protective circuit for insulated gate field effect transistor integrated circuits |
FR2490860B1 (fr) * | 1980-09-24 | 1986-11-28 | Nippon Telegraph & Telephone | Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit |
NL8100347A (nl) * | 1981-01-26 | 1982-08-16 | Philips Nv | Halfgeleiderinrichting met een beveiligingsinrichting. |
JPS5836169A (ja) * | 1981-08-28 | 1983-03-03 | Fuji Electric Co Ltd | サイリスタ監視装置 |
US4567500A (en) * | 1981-12-01 | 1986-01-28 | Rca Corporation | Semiconductor structure for protecting integrated circuit devices |
JPS5967161U (ja) * | 1982-10-29 | 1984-05-07 | 鈴木 信彦 | モツプ |
JPS60128653A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | 半導体集積回路装置 |
US4763184A (en) * | 1985-04-30 | 1988-08-09 | Waferscale Integration, Inc. | Input circuit for protecting against damage caused by electrostatic discharge |
US4760433A (en) * | 1986-01-31 | 1988-07-26 | Harris Corporation | ESD protection transistors |
US4786961A (en) * | 1986-02-28 | 1988-11-22 | General Electric Company | Bipolar transistor with transient suppressor |
FR2600219A1 (fr) * | 1986-06-17 | 1987-12-18 | Rca Corp | Circuit de protection contre des decharges electrostatiques, notamment pour circuits integres |
FR2624655B1 (fr) * | 1987-12-14 | 1990-05-11 | Sgs Thomson Microelectronics | Structure de protection d'un acces a un circuit integre |
US4875130A (en) * | 1988-07-06 | 1989-10-17 | National Semiconductor Corporation | ESD low resistance input structure |
US5043782A (en) * | 1990-05-08 | 1991-08-27 | David Sarnoff Research Center, Inc. | Low voltage triggered snap-back device |
DE3930697A1 (de) * | 1989-09-14 | 1991-03-28 | Bosch Gmbh Robert | Steuerbare temperaturkompensierte spannungsbegrenzungseinrichtung |
SE466078B (sv) * | 1990-04-20 | 1991-12-09 | Ericsson Telefon Ab L M | Anordning vid en skaerm hos en integrerad krets och foerfarande foer framstaellning av anordningen |
US5589251A (en) * | 1990-08-06 | 1996-12-31 | Tokai Electronics Co., Ltd. | Resonant tag and method of manufacturing the same |
US5695860A (en) * | 1990-08-06 | 1997-12-09 | Tokai Electronics Co., Ltd. | Resonant tag and method of manufacturing the same |
US5447779A (en) * | 1990-08-06 | 1995-09-05 | Tokai Electronics Co., Ltd. | Resonant tag and method of manufacturing the same |
US5268589A (en) * | 1990-09-28 | 1993-12-07 | Siemens Aktiengesellschaft | Semiconductor chip having at least one electrical resistor means |
US5138413A (en) * | 1990-10-22 | 1992-08-11 | Harris Corporation | Piso electrostatic discharge protection device |
KR960002094B1 (ko) * | 1990-11-30 | 1996-02-10 | 가부시키가이샤 도시바 | 입력보호회로를 갖춘 반도체장치 |
US5272371A (en) * | 1991-11-19 | 1993-12-21 | Sgs-Thomson Microelectronics, Inc. | Electrostatic discharge protection structure |
US5591661A (en) * | 1992-04-07 | 1997-01-07 | Shiota; Philip | Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures |
US5272097A (en) * | 1992-04-07 | 1993-12-21 | Philip Shiota | Method for fabricating diodes for electrostatic discharge protection and voltage references |
JP3255186B2 (ja) * | 1992-08-24 | 2002-02-12 | ソニー株式会社 | 保護装置と固体撮像素子 |
US5428498A (en) * | 1992-09-28 | 1995-06-27 | Xerox Corporation | Office environment level electrostatic discharge protection |
JPH07283405A (ja) * | 1994-04-13 | 1995-10-27 | Toshiba Corp | 半導体装置の保護回路 |
JP3332123B2 (ja) * | 1994-11-10 | 2002-10-07 | 株式会社東芝 | 入力保護回路及びこれを用いた半導体装置 |
AU2001273434A1 (en) | 2000-07-13 | 2002-01-30 | Broadcom Corporation | Methods and systems for improving esd clamp response time |
US7439592B2 (en) * | 2004-12-13 | 2008-10-21 | Broadcom Corporation | ESD protection for high voltage applications |
US7505238B2 (en) * | 2005-01-07 | 2009-03-17 | Agnes Neves Woo | ESD configuration for low parasitic capacitance I/O |
JP4094012B2 (ja) * | 2005-02-21 | 2008-06-04 | 松下電器産業株式会社 | 半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3403270A (en) * | 1965-05-10 | 1968-09-24 | Gen Micro Electronics Inc | Overvoltage protective circuit for insulated gate field effect transistor |
US3622812A (en) * | 1968-09-09 | 1971-11-23 | Texas Instruments Inc | Bipolar-to-mos interface stage |
BE756139A (fr) * | 1969-09-15 | 1971-02-15 | Rca Corp | Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee |
US3739238A (en) * | 1969-09-24 | 1973-06-12 | Tokyo Shibaura Electric Co | Semiconductor device with a field effect transistor |
-
1971
- 1971-12-09 US US00206361A patent/US3787717A/en not_active Expired - Lifetime
-
1972
- 1972-10-24 IT IT30833/72A patent/IT969827B/it active
- 1972-10-25 FR FR7238482A patent/FR2162365B1/fr not_active Expired
- 1972-10-27 GB GB4954072A patent/GB1337220A/en not_active Expired
- 1972-10-27 SE SE7213931A patent/SE374840B/xx unknown
- 1972-11-09 NL NL7215143A patent/NL7215143A/xx not_active Application Discontinuation
- 1972-11-16 CH CH1672172A patent/CH542536A/de not_active IP Right Cessation
- 1972-11-25 DE DE2257846A patent/DE2257846C3/de not_active Expired
- 1972-11-30 JP JP11947972A patent/JPS5324157B2/ja not_active Expired
- 1972-12-05 CA CA158,254A patent/CA954233A/en not_active Expired
- 1972-12-07 ES ES409423A patent/ES409423A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2257846B2 (de) | 1978-08-17 |
SE374840B (es) | 1975-03-17 |
JPS5324157B2 (es) | 1978-07-19 |
US3787717A (en) | 1974-01-22 |
JPS4864455A (es) | 1973-09-06 |
CH542536A (de) | 1973-09-30 |
NL7215143A (es) | 1973-06-13 |
IT969827B (it) | 1974-04-10 |
CA954233A (en) | 1974-09-03 |
DE2257846C3 (de) | 1979-04-19 |
GB1337220A (en) | 1973-11-14 |
FR2162365B1 (es) | 1976-05-21 |
DE2257846A1 (de) | 1973-06-20 |
FR2162365A1 (es) | 1973-07-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19850207 |