NL7215143A - - Google Patents
Info
- Publication number
- NL7215143A NL7215143A NL7215143A NL7215143A NL7215143A NL 7215143 A NL7215143 A NL 7215143A NL 7215143 A NL7215143 A NL 7215143A NL 7215143 A NL7215143 A NL 7215143A NL 7215143 A NL7215143 A NL 7215143A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20636171A | 1971-12-09 | 1971-12-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7215143A true NL7215143A (xx) | 1973-06-13 |
Family
ID=22766028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7215143A NL7215143A (xx) | 1971-12-09 | 1972-11-09 |
Country Status (11)
Country | Link |
---|---|
US (1) | US3787717A (xx) |
JP (1) | JPS5324157B2 (xx) |
CA (1) | CA954233A (xx) |
CH (1) | CH542536A (xx) |
DE (1) | DE2257846C3 (xx) |
ES (1) | ES409423A1 (xx) |
FR (1) | FR2162365B1 (xx) |
GB (1) | GB1337220A (xx) |
IT (1) | IT969827B (xx) |
NL (1) | NL7215143A (xx) |
SE (1) | SE374840B (xx) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5431671B2 (xx) * | 1973-03-14 | 1979-10-08 | ||
FR2289051A1 (fr) * | 1974-10-22 | 1976-05-21 | Ibm | Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions |
JPS5930539Y2 (ja) * | 1975-06-14 | 1984-08-31 | 富士通株式会社 | 半導体装置 |
JPS526470U (xx) * | 1975-06-30 | 1977-01-18 | ||
JPS5286372U (xx) * | 1975-12-24 | 1977-06-28 | ||
NL176322C (nl) * | 1976-02-24 | 1985-03-18 | Philips Nv | Halfgeleiderinrichting met beveiligingsschakeling. |
US4053915A (en) * | 1976-03-22 | 1977-10-11 | Motorola, Inc. | Temperature compensated constant current source device |
US4100561A (en) * | 1976-05-24 | 1978-07-11 | Rca Corp. | Protective circuit for MOS devices |
US4072976A (en) * | 1976-12-28 | 1978-02-07 | Hughes Aircraft Company | Gate protection device for MOS circuits |
US4276555A (en) * | 1978-07-13 | 1981-06-30 | International Business Machines Corporation | Controlled avalanche voltage transistor and magnetic sensor |
US4264941A (en) * | 1979-02-14 | 1981-04-28 | National Semiconductor Corporation | Protective circuit for insulated gate field effect transistor integrated circuits |
FR2490860B1 (fr) * | 1980-09-24 | 1986-11-28 | Nippon Telegraph & Telephone | Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit |
NL8100347A (nl) * | 1981-01-26 | 1982-08-16 | Philips Nv | Halfgeleiderinrichting met een beveiligingsinrichting. |
JPS5836169A (ja) * | 1981-08-28 | 1983-03-03 | Fuji Electric Co Ltd | サイリスタ監視装置 |
US4567500A (en) * | 1981-12-01 | 1986-01-28 | Rca Corporation | Semiconductor structure for protecting integrated circuit devices |
JPS5967161U (ja) * | 1982-10-29 | 1984-05-07 | 鈴木 信彦 | モツプ |
JPS60128653A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | 半導体集積回路装置 |
US4763184A (en) * | 1985-04-30 | 1988-08-09 | Waferscale Integration, Inc. | Input circuit for protecting against damage caused by electrostatic discharge |
US4760433A (en) * | 1986-01-31 | 1988-07-26 | Harris Corporation | ESD protection transistors |
US4786961A (en) * | 1986-02-28 | 1988-11-22 | General Electric Company | Bipolar transistor with transient suppressor |
DE3720046A1 (de) * | 1986-06-17 | 1987-12-23 | Rca Corp | Integrierte schaltung |
FR2624655B1 (fr) * | 1987-12-14 | 1990-05-11 | Sgs Thomson Microelectronics | Structure de protection d'un acces a un circuit integre |
US4875130A (en) * | 1988-07-06 | 1989-10-17 | National Semiconductor Corporation | ESD low resistance input structure |
US5043782A (en) * | 1990-05-08 | 1991-08-27 | David Sarnoff Research Center, Inc. | Low voltage triggered snap-back device |
DE3930697A1 (de) * | 1989-09-14 | 1991-03-28 | Bosch Gmbh Robert | Steuerbare temperaturkompensierte spannungsbegrenzungseinrichtung |
SE466078B (sv) * | 1990-04-20 | 1991-12-09 | Ericsson Telefon Ab L M | Anordning vid en skaerm hos en integrerad krets och foerfarande foer framstaellning av anordningen |
US5447779A (en) * | 1990-08-06 | 1995-09-05 | Tokai Electronics Co., Ltd. | Resonant tag and method of manufacturing the same |
US5589251A (en) * | 1990-08-06 | 1996-12-31 | Tokai Electronics Co., Ltd. | Resonant tag and method of manufacturing the same |
US5695860A (en) * | 1990-08-06 | 1997-12-09 | Tokai Electronics Co., Ltd. | Resonant tag and method of manufacturing the same |
US5268589A (en) * | 1990-09-28 | 1993-12-07 | Siemens Aktiengesellschaft | Semiconductor chip having at least one electrical resistor means |
US5138413A (en) * | 1990-10-22 | 1992-08-11 | Harris Corporation | Piso electrostatic discharge protection device |
KR960002094B1 (ko) * | 1990-11-30 | 1996-02-10 | 가부시키가이샤 도시바 | 입력보호회로를 갖춘 반도체장치 |
US5272371A (en) * | 1991-11-19 | 1993-12-21 | Sgs-Thomson Microelectronics, Inc. | Electrostatic discharge protection structure |
US5272097A (en) * | 1992-04-07 | 1993-12-21 | Philip Shiota | Method for fabricating diodes for electrostatic discharge protection and voltage references |
US5591661A (en) * | 1992-04-07 | 1997-01-07 | Shiota; Philip | Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures |
JP3255186B2 (ja) * | 1992-08-24 | 2002-02-12 | ソニー株式会社 | 保護装置と固体撮像素子 |
US5428498A (en) * | 1992-09-28 | 1995-06-27 | Xerox Corporation | Office environment level electrostatic discharge protection |
JPH07283405A (ja) * | 1994-04-13 | 1995-10-27 | Toshiba Corp | 半導体装置の保護回路 |
JP3332123B2 (ja) * | 1994-11-10 | 2002-10-07 | 株式会社東芝 | 入力保護回路及びこれを用いた半導体装置 |
AU2001273434A1 (en) | 2000-07-13 | 2002-01-30 | Broadcom Corporation | Methods and systems for improving esd clamp response time |
US7439592B2 (en) * | 2004-12-13 | 2008-10-21 | Broadcom Corporation | ESD protection for high voltage applications |
US7505238B2 (en) * | 2005-01-07 | 2009-03-17 | Agnes Neves Woo | ESD configuration for low parasitic capacitance I/O |
JP4094012B2 (ja) * | 2005-02-21 | 2008-06-04 | 松下電器産業株式会社 | 半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3403270A (en) * | 1965-05-10 | 1968-09-24 | Gen Micro Electronics Inc | Overvoltage protective circuit for insulated gate field effect transistor |
US3622812A (en) * | 1968-09-09 | 1971-11-23 | Texas Instruments Inc | Bipolar-to-mos interface stage |
BE756139A (fr) * | 1969-09-15 | 1971-02-15 | Rca Corp | Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee |
US3739238A (en) * | 1969-09-24 | 1973-06-12 | Tokyo Shibaura Electric Co | Semiconductor device with a field effect transistor |
-
1971
- 1971-12-09 US US00206361A patent/US3787717A/en not_active Expired - Lifetime
-
1972
- 1972-10-24 IT IT30833/72A patent/IT969827B/it active
- 1972-10-25 FR FR7238482A patent/FR2162365B1/fr not_active Expired
- 1972-10-27 SE SE7213931A patent/SE374840B/xx unknown
- 1972-10-27 GB GB4954072A patent/GB1337220A/en not_active Expired
- 1972-11-09 NL NL7215143A patent/NL7215143A/xx not_active Application Discontinuation
- 1972-11-16 CH CH1672172A patent/CH542536A/de not_active IP Right Cessation
- 1972-11-25 DE DE2257846A patent/DE2257846C3/de not_active Expired
- 1972-11-30 JP JP11947972A patent/JPS5324157B2/ja not_active Expired
- 1972-12-05 CA CA158,254A patent/CA954233A/en not_active Expired
- 1972-12-07 ES ES409423A patent/ES409423A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5324157B2 (xx) | 1978-07-19 |
GB1337220A (en) | 1973-11-14 |
FR2162365B1 (xx) | 1976-05-21 |
ES409423A1 (es) | 1975-12-16 |
SE374840B (xx) | 1975-03-17 |
US3787717A (en) | 1974-01-22 |
DE2257846C3 (de) | 1979-04-19 |
DE2257846A1 (de) | 1973-06-20 |
CA954233A (en) | 1974-09-03 |
FR2162365A1 (xx) | 1973-07-20 |
IT969827B (it) | 1974-04-10 |
DE2257846B2 (de) | 1978-08-17 |
JPS4864455A (xx) | 1973-09-06 |
CH542536A (de) | 1973-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |