ES377825A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES377825A1
ES377825A1 ES377825A ES377825A ES377825A1 ES 377825 A1 ES377825 A1 ES 377825A1 ES 377825 A ES377825 A ES 377825A ES 377825 A ES377825 A ES 377825A ES 377825 A1 ES377825 A1 ES 377825A1
Authority
ES
Spain
Prior art keywords
zone
additional
contact layer
type
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES377825A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES377825A1 publication Critical patent/ES377825A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
ES377825A 1969-03-25 1970-03-23 Un dispositivo semiconductor. Expired ES377825A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6904543A NL6904543A (OSRAM) 1969-03-25 1969-03-25

Publications (1)

Publication Number Publication Date
ES377825A1 true ES377825A1 (es) 1972-05-16

Family

ID=19806513

Family Applications (1)

Application Number Title Priority Date Filing Date
ES377825A Expired ES377825A1 (es) 1969-03-25 1970-03-23 Un dispositivo semiconductor.

Country Status (9)

Country Link
BE (1) BE747892A (OSRAM)
BR (1) BR7017682D0 (OSRAM)
CH (1) CH504102A (OSRAM)
DE (1) DE2012945C3 (OSRAM)
ES (1) ES377825A1 (OSRAM)
FR (1) FR2037251B1 (OSRAM)
GB (1) GB1300726A (OSRAM)
NL (1) NL6904543A (OSRAM)
SE (1) SE349425B (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (OSRAM) * 1970-10-05 1974-10-31 Radiotechnique Compelec
JPS573225B2 (OSRAM) * 1974-08-19 1982-01-20
IN144541B (OSRAM) * 1975-06-11 1978-05-13 Rca Corp
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
US5345101A (en) * 1993-06-28 1994-09-06 Motorola, Inc. High voltage semiconductor structure and method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA667423A (en) * 1963-07-23 Northern Electric Company Limited Semiconductor device and method of manufacture
NL282779A (OSRAM) * 1961-09-08
FR1337348A (fr) * 1961-09-08 1963-09-13 Pacific Semiconductors Transistors de couplage
FR1417163A (fr) * 1963-08-27 1965-11-12 Ibm Dispositifs semi-conducteurs et leur fabrication
GB1030050A (en) * 1963-11-13 1966-05-18 Motorola Inc Punchthrough breakdown rectifier
FR1459892A (fr) * 1964-08-20 1966-06-17 Texas Instruments Inc Dispositifs semi-conducteurs
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes
FR1475201A (fr) * 1965-04-07 1967-03-31 Itt Dispositif plan à semi-conducteurs
DE1273700B (de) * 1965-04-07 1968-07-25 Itt Ind Ges Mit Beschraenkter Halbleiterbauelement
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Also Published As

Publication number Publication date
GB1300726A (en) 1972-12-20
BR7017682D0 (pt) 1973-04-17
BE747892A (fr) 1970-09-24
DE2012945B2 (de) 1977-12-29
FR2037251B1 (OSRAM) 1974-09-20
NL6904543A (OSRAM) 1970-09-29
DE2012945C3 (de) 1985-01-31
SE349425B (OSRAM) 1972-09-25
FR2037251A1 (OSRAM) 1970-12-31
DE2012945A1 (OSRAM) 1970-10-08
CH504102A (de) 1971-02-28

Similar Documents

Publication Publication Date Title
ES326632A1 (es) Un dispositivo semiconductor.
GB1138237A (en) Guard junctions for p-n junction semiconductor devices
ES408758A1 (es) Un metodo de fabricar un dispositivo semiconductor.
GB1425986A (en) Semiconductor devices comprising insulated-gate- field-effect transistors
ES403027A1 (es) Un dispositivo semiconductor.
ES327989A1 (es) Un dispositivo semiconductor.
GB1518984A (en) Integrated circuit
ES315030A1 (es) Un dispositivo semiconductor de efecto de campo de portal aislado.
UST964009I4 (en) High voltage semiconductor structure
GB1140822A (en) Semi-conductor elements
GB1134019A (en) Improvements in semi-conductor devices
ES408617A1 (es) Un metodo para la fabricacion de un dispositivo semiconduc-tor.
ES321146A1 (es) Un dispositivo semiconductor.
ES377824A1 (es) Un dispositivo semiconductor.
ES374056A1 (es) Dispositivo de barrera de pontencial.
GB1423449A (en) Semiconductor device
GB1102197A (en) Semi-conductor elements
ES375564A1 (es) Perfeccionamientos en la fabricacion de dispositivos de circuitos integrados semiconductores monoliticos.
GB1102836A (en) Multi-junction semi-conductor elements
JPS4819113B1 (OSRAM)
JPS53110479A (en) Production of semiconductor device
ES433346A1 (es) Dispositivo semiconductor.
GB1007936A (en) Improvements in or relating to semiconductive devices
JPS5422785A (en) Mis-type semiconductor memory device and its manufacture
GB1106637A (en) Controllable semi-conductor device