ES365930A1 - Un metodo de fabricar cristales, particularmente cristales filamentosos. - Google Patents

Un metodo de fabricar cristales, particularmente cristales filamentosos.

Info

Publication number
ES365930A1
ES365930A1 ES365930A ES365930A ES365930A1 ES 365930 A1 ES365930 A1 ES 365930A1 ES 365930 A ES365930 A ES 365930A ES 365930 A ES365930 A ES 365930A ES 365930 A1 ES365930 A1 ES 365930A1
Authority
ES
Spain
Prior art keywords
crystals
metal
substrate
droplets
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES365930A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES365930A1 publication Critical patent/ES365930A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ES365930A 1968-04-13 1969-04-11 Un metodo de fabricar cristales, particularmente cristales filamentosos. Expired ES365930A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805300A NL6805300A (de) 1968-04-13 1968-04-13

Publications (1)

Publication Number Publication Date
ES365930A1 true ES365930A1 (es) 1971-03-16

Family

ID=19803336

Family Applications (1)

Application Number Title Priority Date Filing Date
ES365930A Expired ES365930A1 (es) 1968-04-13 1969-04-11 Un metodo de fabricar cristales, particularmente cristales filamentosos.

Country Status (9)

Country Link
US (1) US3632405A (de)
BE (1) BE731440A (de)
CH (1) CH538300A (de)
DE (1) DE1917136C3 (de)
ES (1) ES365930A1 (de)
FR (1) FR2006185A1 (de)
GB (1) GB1229900A (de)
NL (1) NL6805300A (de)
NO (1) NO124059B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404836A (en) * 1989-02-03 1995-04-11 Milewski; John V. Method and apparatus for continuous controlled production of single crystal whiskers
JP2697474B2 (ja) * 1992-04-30 1998-01-14 松下電器産業株式会社 微細構造の製造方法
RU2099808C1 (ru) * 1996-04-01 1997-12-20 Евгений Инвиевич Гиваргизов Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты)
US6221154B1 (en) * 1999-02-18 2001-04-24 City University Of Hong Kong Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD)
KR101008294B1 (ko) * 2001-03-30 2011-01-13 더 리전트 오브 더 유니버시티 오브 캘리포니아 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3346414A (en) * 1964-01-28 1967-10-10 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
US3493431A (en) * 1966-11-25 1970-02-03 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique

Also Published As

Publication number Publication date
GB1229900A (de) 1971-04-28
CH538300A (de) 1973-06-30
BE731440A (de) 1969-10-13
DE1917136A1 (de) 1970-09-24
NO124059B (de) 1972-02-28
NL6805300A (de) 1969-10-15
US3632405A (en) 1972-01-04
DE1917136C3 (de) 1974-05-16
DE1917136B2 (de) 1973-10-04
FR2006185A1 (de) 1969-12-19

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