GB1320998A - Process for preparing a layer of compounds of groups iib and vib - Google Patents

Process for preparing a layer of compounds of groups iib and vib

Info

Publication number
GB1320998A
GB1320998A GB3859071A GB3859071A GB1320998A GB 1320998 A GB1320998 A GB 1320998A GB 3859071 A GB3859071 A GB 3859071A GB 3859071 A GB3859071 A GB 3859071A GB 1320998 A GB1320998 A GB 1320998A
Authority
GB
United Kingdom
Prior art keywords
compounds
layer
vib
groups iib
aug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3859071A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1320998A publication Critical patent/GB1320998A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)

Abstract

1320998 Layer of compounds of Groups IIb and VIb TOKYO SHIBAURA ELECTRIC CO Ltd 17 Aug 1971 [17 Aug 1970] 38590/71 Heading C1A A layer of compounds of elements Groups IIb and VIb of the Mendeleef Periodic Table is prepared by a process characterized in that a layer of the compounds is formed on a substrate plate, the thus formed layer is heat treated at a temperature of not less than 450‹ C. in an atmosphere comprising one or more inert gases and the vapour of at least one element selected from sulphur, selenium and tellurium, whereby uniformity of grain size is effected. The invention is particularly applicable to compounds selected from CdSe, ZnSe, CdS, ZnS, CdTe and ZnTe. The inert gases which constitute the main component of the heat treating atmosphere are argon, nitrogen or a mixture thereof. Grain growth is effected without the use of any flux, hence the control of impurity is much simplified.
GB3859071A 1970-08-17 1971-08-17 Process for preparing a layer of compounds of groups iib and vib Expired GB1320998A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45071391A JPS5118155B1 (en) 1970-08-17 1970-08-17

Publications (1)

Publication Number Publication Date
GB1320998A true GB1320998A (en) 1973-06-20

Family

ID=13459155

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3859071A Expired GB1320998A (en) 1970-08-17 1971-08-17 Process for preparing a layer of compounds of groups iib and vib

Country Status (4)

Country Link
US (1) US3793069A (en)
JP (1) JPS5118155B1 (en)
CA (1) CA950806A (en)
GB (1) GB1320998A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870558A (en) * 1971-08-17 1975-03-11 Tokyo Shibouro Electric Co Ltd Process for preparing a layer of compounds of groups II and VI
BR7507192A (en) * 1974-11-08 1976-08-10 Western Electric Co PHOTOVOLTAIC CELL AND PROCESS FOR ITS MANUFACTURING
US4046565A (en) * 1975-03-25 1977-09-06 Addressograph Multigraph Corporation Amorphous selenium coating
US4035197A (en) * 1976-03-30 1977-07-12 Eastman Kodak Company Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
USRE30412E (en) * 1979-04-26 1980-10-07 Eastman Kodak Company CdTe Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
US5045409A (en) * 1987-11-27 1991-09-03 Atlantic Richfield Company Process for making thin film solar cell
US5030477A (en) * 1988-11-14 1991-07-09 Xerox Corporation Processes for the preparation and processes for suppressing the fractionation of chalcogenide alloys
US5484736A (en) * 1994-09-19 1996-01-16 Midwest Research Institute Process for producing large grain cadmium telluride
CN103962295B (en) * 2014-04-30 2015-08-19 齐鲁工业大学 A kind of simple high efficiency preparation method of zinc sulfide semiconductor film
US20220290328A1 (en) * 2019-07-26 2022-09-15 Alliance For Sustainable Energy, Llc Extreme large grain (1 mm) lateral growth of cd(se,te) alloy thin films by reactive anneals

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929828B1 (en) * 1968-10-25 1974-08-07

Also Published As

Publication number Publication date
CA950806A (en) 1974-07-09
DE2141212B2 (en) 1976-11-25
US3793069A (en) 1974-02-19
DE2141212A1 (en) 1972-02-24
JPS5118155B1 (en) 1976-06-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee