NO124059B - - Google Patents
Download PDFInfo
- Publication number
- NO124059B NO124059B NO1475/69A NO147569A NO124059B NO 124059 B NO124059 B NO 124059B NO 1475/69 A NO1475/69 A NO 1475/69A NO 147569 A NO147569 A NO 147569A NO 124059 B NO124059 B NO 124059B
- Authority
- NO
- Norway
- Prior art keywords
- metal
- crystals
- partial pressure
- crystallization
- source
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims description 58
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 17
- 238000002425 crystallisation Methods 0.000 claims description 16
- 230000008025 crystallization Effects 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 150000002736 metal compounds Chemical class 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 16
- 239000007789 gas Substances 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 7
- 239000012071 phase Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000007792 gaseous phase Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 101000604097 Xenopus laevis Homeobox protein notochord Proteins 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006163 transport media Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6805300A NL6805300A (de) | 1968-04-13 | 1968-04-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO124059B true NO124059B (de) | 1972-02-28 |
Family
ID=19803336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO1475/69A NO124059B (de) | 1968-04-13 | 1969-04-10 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3632405A (de) |
| BE (1) | BE731440A (de) |
| CH (1) | CH538300A (de) |
| DE (1) | DE1917136C3 (de) |
| ES (1) | ES365930A1 (de) |
| FR (1) | FR2006185A1 (de) |
| GB (1) | GB1229900A (de) |
| NL (1) | NL6805300A (de) |
| NO (1) | NO124059B (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5404836A (en) * | 1989-02-03 | 1995-04-11 | Milewski; John V. | Method and apparatus for continuous controlled production of single crystal whiskers |
| JP2697474B2 (ja) * | 1992-04-30 | 1998-01-14 | 松下電器産業株式会社 | 微細構造の製造方法 |
| RU2099808C1 (ru) * | 1996-04-01 | 1997-12-20 | Евгений Инвиевич Гиваргизов | Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты) |
| US6221154B1 (en) * | 1999-02-18 | 2001-04-24 | City University Of Hong Kong | Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD) |
| CA2442985C (en) * | 2001-03-30 | 2016-05-31 | The Regents Of The University Of California | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3346414A (en) * | 1964-01-28 | 1967-10-10 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique |
| US3493431A (en) * | 1966-11-25 | 1970-02-03 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique |
-
1968
- 1968-04-13 NL NL6805300A patent/NL6805300A/xx unknown
-
1969
- 1969-04-02 DE DE1917136A patent/DE1917136C3/de not_active Expired
- 1969-04-10 GB GB1229900D patent/GB1229900A/en not_active Expired
- 1969-04-10 NO NO1475/69A patent/NO124059B/no unknown
- 1969-04-10 FR FR6911083A patent/FR2006185A1/fr not_active Withdrawn
- 1969-04-10 CH CH553769A patent/CH538300A/de not_active IP Right Cessation
- 1969-04-11 ES ES365930A patent/ES365930A1/es not_active Expired
- 1969-04-11 BE BE731440D patent/BE731440A/xx unknown
- 1969-04-14 US US815678A patent/US3632405A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2006185A1 (de) | 1969-12-19 |
| US3632405A (en) | 1972-01-04 |
| GB1229900A (de) | 1971-04-28 |
| DE1917136A1 (de) | 1970-09-24 |
| DE1917136C3 (de) | 1974-05-16 |
| ES365930A1 (es) | 1971-03-16 |
| BE731440A (de) | 1969-10-13 |
| DE1917136B2 (de) | 1973-10-04 |
| CH538300A (de) | 1973-06-30 |
| NL6805300A (de) | 1969-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4512094B2 (ja) | 気体透過性の坩堝壁面によるＡｌＮ単結晶の製造方法と装置 | |
| Zhang et al. | Bulk-quantity Si nanowires synthesized by SiO sublimation | |
| Fu et al. | Synthesis of silicon carbide nanowires by CVD without using a metallic catalyst | |
| TW552325B (en) | Method and apparatus for growing silicon carbide crystals | |
| US4090851A (en) | Si3 N4 Coated crucible and die means for growing single crystalline silicon sheets | |
| TWI399796B (zh) | Iii族氮化物結晶、其製造方法及製造iii族氮化物結晶之設備 | |
| US3031275A (en) | Process for growing single crystals | |
| RU2706830C1 (ru) | Устройство и способ для вакуумного нанесения покрытия | |
| US20020170490A1 (en) | Method and apparatus for growing aluminum nitride monocrystals | |
| KR20070084283A (ko) | ＧａＮ 또는 ＡｌＧａＮ 결정을 생성하는 방법 | |
| JPH05208900A (ja) | 炭化ケイ素単結晶の成長装置 | |
| JPS59162117A (ja) | 珪素棒の製造方法 | |
| EP1540048B1 (de) | Siliciumcarbid-einkristall und verfahren und vorrichtung zu seiner herstellung | |
| US6514338B2 (en) | Method and apparatus for producing silicon carbide single crystal | |
| NO124059B (de) | ||
| KR20140073057A (ko) | 경사형 C/SiC 코팅막 형성 방법 및 장치 | |
| Fan et al. | Effects of ambient pressure on silicon nanowire growth | |
| Shi et al. | Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique | |
| RU2097452C1 (ru) | Способ эпитаксиального выращивания монокристаллов нитридов металлов 3а группы химических элементов | |
| JP4505202B2 (ja) | 炭化珪素単結晶の製造方法および製造装置 | |
| GB787394A (en) | Method and apparatus for producing crystalline silicon | |
| US3773899A (en) | Manufacture of silicon carbide | |
| EP1158077A1 (de) | Verfahren und vorrichtung zur herstellung von einkristallen aus siliziumkarbid | |
| US3413090A (en) | Preparation of silicon nitride whiskers | |
| JP4736365B2 (ja) | 窒化アルミニウム単結晶の製造方法 |