ES2923453T3 - Alineación de nanotubos de carbono en canales confinados - Google Patents
Alineación de nanotubos de carbono en canales confinados Download PDFInfo
- Publication number
- ES2923453T3 ES2923453T3 ES18764605T ES18764605T ES2923453T3 ES 2923453 T3 ES2923453 T3 ES 2923453T3 ES 18764605 T ES18764605 T ES 18764605T ES 18764605 T ES18764605 T ES 18764605T ES 2923453 T3 ES2923453 T3 ES 2923453T3
- Authority
- ES
- Spain
- Prior art keywords
- carbon nanotubes
- fluid suspension
- substrate
- organic
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 219
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 210
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 210
- 239000000725 suspension Substances 0.000 claims abstract description 138
- 239000012530 fluid Substances 0.000 claims abstract description 112
- 238000000034 method Methods 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims description 136
- 239000007788 liquid Substances 0.000 claims description 76
- 238000000151 deposition Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 29
- 230000008021 deposition Effects 0.000 claims description 25
- 239000002904 solvent Substances 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000011368 organic material Substances 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000003491 array Methods 0.000 abstract description 27
- 239000011159 matrix material Substances 0.000 abstract description 15
- 238000013519 translation Methods 0.000 abstract description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 27
- 239000002109 single walled nanotube Substances 0.000 description 25
- 239000010408 film Substances 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 18
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 15
- 238000000576 coating method Methods 0.000 description 15
- 239000002071 nanotube Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- -1 poly(phenylvinylene) Polymers 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 238000001878 scanning electron micrograph Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 6
- 229920001774 Perfluoroether Polymers 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000000527 sonication Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 238000001338 self-assembly Methods 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- 241000252506 Characiformes Species 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000006228 supernatant Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 102100040181 Aminopeptidase Q Human genes 0.000 description 1
- 101710099478 Aminopeptidase Q Proteins 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229920001600 hydrophobic polymer Polymers 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003791 organic solvent mixture Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002455 polarised Raman spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
- C01B32/172—Sorting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/08—Aligned nanotubes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
- Y10S977/745—Carbon nanotubes, CNTs having a modified surface
- Y10S977/746—Modified with biological, organic, or hydrocarbon material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/847—Surface modifications, e.g. functionalization, coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
- Y10S977/891—Vapor phase deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Yarns And Mechanical Finishing Of Yarns Or Ropes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/455,587 US10873026B2 (en) | 2017-03-10 | 2017-03-10 | Alignment of carbon nanotubes in confined channels |
| PCT/US2018/012480 WO2018164764A1 (en) | 2017-03-10 | 2018-01-05 | Alignment of carbon nanotubes in confined channels |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2923453T3 true ES2923453T3 (es) | 2022-09-27 |
Family
ID=63445647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES18764605T Active ES2923453T3 (es) | 2017-03-10 | 2018-01-05 | Alineación de nanotubos de carbono en canales confinados |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10873026B2 (enExample) |
| EP (1) | EP3592699B1 (enExample) |
| JP (2) | JP7206210B2 (enExample) |
| KR (1) | KR102398984B1 (enExample) |
| CN (1) | CN110382413B (enExample) |
| DK (1) | DK3592699T3 (enExample) |
| ES (1) | ES2923453T3 (enExample) |
| PL (1) | PL3592699T3 (enExample) |
| WO (1) | WO2018164764A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020142770A1 (en) * | 2019-01-04 | 2020-07-09 | Atom Optoelectronics, Llc | Carbon nanotube based radio frequency devices |
| WO2021043235A1 (zh) * | 2019-09-04 | 2021-03-11 | 北京华碳元芯电子科技有限责任公司 | 一种制备高密度顺排碳纳米管薄膜的方法 |
| US20220255001A1 (en) * | 2021-02-08 | 2022-08-11 | Wisconsin Alumni Research Foundation | Selected-area deposition of highly aligned carbon nanotube films using chemically and topographically patterned substrates |
| US11631814B2 (en) | 2021-07-15 | 2023-04-18 | Wisconsin Alumni Research Foundation | Two-dimensional carbon nanotube liquid crystal films for wafer-scale electronics |
| US20250054755A1 (en) * | 2023-08-07 | 2025-02-13 | Wisconsin Alumni Research Foundation | Surface-water-assisted deposition of patterned films of aligned nanoparticles |
Family Cites Families (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3611503B2 (ja) | 1999-07-21 | 2005-01-19 | シャープ株式会社 | 電子源及びその製造方法 |
| CN101104514A (zh) * | 1999-10-27 | 2008-01-16 | 威廉马歇莱思大学 | 碳质毫微管的宏观有序集合体 |
| JP3579714B2 (ja) | 2001-01-29 | 2004-10-20 | 独立行政法人産業技術総合研究所 | カーボンナノチューブからなるｌｂ膜 |
| US7060241B2 (en) * | 2001-03-26 | 2006-06-13 | Eikos, Inc. | Coatings comprising carbon nanotubes and methods for forming same |
| US6896864B2 (en) * | 2001-07-10 | 2005-05-24 | Battelle Memorial Institute | Spatial localization of dispersed single walled carbon nanotubes into useful structures |
| US7147894B2 (en) | 2002-03-25 | 2006-12-12 | The University Of North Carolina At Chapel Hill | Method for assembling nano objects |
| US6872645B2 (en) | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
| AU2003251307A1 (en) | 2002-09-10 | 2004-04-30 | The Trustees Of The University Pennsylvania | Carbon nanotubes: high solids dispersions and nematic gels thereof |
| CA2499965C (en) * | 2002-09-30 | 2013-03-19 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
| US20050208304A1 (en) * | 2003-02-21 | 2005-09-22 | California Institute Of Technology | Coatings for carbon nanotubes |
| US6918284B2 (en) | 2003-03-24 | 2005-07-19 | The United States Of America As Represented By The Secretary Of The Navy | Interconnected networks of single-walled carbon nanotubes |
| US20080020487A1 (en) * | 2004-09-16 | 2008-01-24 | Mclean Robert S | Alignment of carbon nanotubes on a substrate via solution deposition |
| US20070246784A1 (en) | 2004-10-13 | 2007-10-25 | Samsung Electronics Co., Ltd. | Unipolar nanotube transistor using a carrier-trapping material |
| US7226818B2 (en) | 2004-10-15 | 2007-06-05 | General Electric Company | High performance field effect transistors comprising carbon nanotubes fabricated using solution based processing |
| JP5350635B2 (ja) * | 2004-11-09 | 2013-11-27 | ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム | ナノファイバーのリボンおよびシートならびにナノファイバーの撚り糸および無撚り糸の製造および適用 |
| US8017863B2 (en) | 2005-11-02 | 2011-09-13 | The Regents Of The University Of Michigan | Polymer wrapped carbon nanotube near-infrared photoactive devices |
| US7982130B2 (en) | 2008-05-01 | 2011-07-19 | The Regents Of The University Of Michigan | Polymer wrapped carbon nanotube near-infrared photovoltaic devices |
| JP4701431B2 (ja) | 2006-01-06 | 2011-06-15 | 独立行政法人産業技術総合研究所 | 異なる密度部分を有する配向カーボンナノチューブ・バルク構造体ならびにその製造方法および用途 |
| CN101484397A (zh) * | 2006-06-09 | 2009-07-15 | 克利夫兰州立大学 | 高强度复合材料和相关方法 |
| WO2008013508A1 (en) * | 2006-07-28 | 2008-01-31 | Nanyang Technological University | Method of aligning nanotubes |
| JP2008037919A (ja) | 2006-08-02 | 2008-02-21 | Mitsubishi Rayon Co Ltd | カーボンナノチューブ含有組成物とそれから得られる複合体 |
| KR100911884B1 (ko) * | 2006-08-30 | 2009-08-11 | 한국전기연구원 | 비상용성 이성분계 고분자 나노입자 복합체에 전단응력을 인가한 나노입자 배향채널의 제조방법 |
| DE102006044182A1 (de) * | 2006-09-15 | 2008-03-27 | Abb Patent Gmbh | System und Verfahren zur bedarfsgerechten Funktionalisierung von Steuer-/Regeleinrichtungen |
| WO2008147431A2 (en) * | 2006-10-12 | 2008-12-04 | Cambrios Technologies Corporation | Functional films formed by highly oriented deposition of nanowires |
| TWI463713B (zh) * | 2006-11-09 | 2014-12-01 | Nanosys Inc | 用於奈米導線對準及沈積的方法 |
| WO2008124211A2 (en) * | 2007-02-15 | 2008-10-16 | University Of Florida Research Foundation, Inc. | Flow sorting of nanomaterials |
| FR2916902B1 (fr) | 2007-05-31 | 2009-07-17 | Commissariat Energie Atomique | Transistor a effet de champ a nanotubes de carbone |
| JP5196879B2 (ja) | 2007-06-20 | 2013-05-15 | キヤノン株式会社 | 圧電材料 |
| US8197888B2 (en) * | 2007-08-02 | 2012-06-12 | The Texas A&M University System | Dispersion, alignment and deposition of nanotubes |
| US8455055B1 (en) | 2007-10-26 | 2013-06-04 | The Boeing Company | Aligning nanotubes |
| KR100974623B1 (ko) | 2007-12-24 | 2010-08-09 | 고려대학교 산학협력단 | 정렬도가 향상된 오산화이바나듐 나노선 박막의 제조방법 및 그로부터 제조된 오산화이바나듐 나노선 박막 |
| JP4737249B2 (ja) | 2008-08-12 | 2011-07-27 | ソニー株式会社 | 薄膜の製造方法及びその装置、並びに電子装置の製造方法 |
| US20100054995A1 (en) * | 2008-08-27 | 2010-03-04 | Seoul National University Industry Foundation | Method for aligning carbon nanotubes in microfluidic channel |
| US8784673B2 (en) | 2008-11-14 | 2014-07-22 | Northeastern University | Highly organized single-walled carbon nanotube networks and method of making using template guided fluidic assembly |
| US8847313B2 (en) | 2008-11-24 | 2014-09-30 | University Of Southern California | Transparent electronics based on transfer printed carbon nanotubes on rigid and flexible substrates |
| KR20100102381A (ko) | 2009-03-11 | 2010-09-24 | 고려대학교 산학협력단 | 전자물질 막 형성 방법 및 이를 적용하는 전자 소자의 제조방법 |
| US8286803B2 (en) * | 2009-06-18 | 2012-10-16 | The Boeing Company | Methods and systems for incorporating carbon nanotubes into thin film composite reverse osmosis membranes |
| US8128993B2 (en) | 2009-07-31 | 2012-03-06 | Nantero Inc. | Anisotropic nanotube fabric layers and films and methods of forming same |
| KR20120127599A (ko) | 2010-01-14 | 2012-11-22 | 더 리젠츠 오브 더 유니버시티 오브 캘리포니아 | 전기 전도성 나노구조의 박막을 성장시키기 위한 일반적 해법 |
| JP2013141631A (ja) | 2012-01-10 | 2013-07-22 | National Institute Of Advanced Industrial Science & Technology | 半導体単層カーボンナノチューブの抽出分離法 |
| EP2837035A2 (en) | 2012-04-12 | 2015-02-18 | Sol Voltaics AB | Methods of nanowire functionalization, dispersion and attachment |
| WO2014012078A2 (en) | 2012-07-13 | 2014-01-16 | President And Fellows Of Harvard College | Selective wetting and transport surfaces |
| US9040364B2 (en) | 2012-10-30 | 2015-05-26 | International Business Machines Corporation | Carbon nanotube devices with unzipped low-resistance contacts |
| WO2014186454A1 (en) | 2013-05-14 | 2014-11-20 | University Of Houston | Waterproof coating with nanoscopic/microscopic features |
| CN103342351B (zh) | 2013-07-10 | 2015-02-18 | 昆明纳太能源科技有限公司 | 一种大规模制备定向排列的巴基纸的方法与装置 |
| EP3096892A4 (en) * | 2014-01-24 | 2017-10-11 | William Marsh Rice University | Carbon nanotube-coated substrates and methods of making the same |
| US9368723B2 (en) * | 2014-02-11 | 2016-06-14 | Wisconsin Alumni Research Foundation | Dose-controlled, floating evaporative assembly of aligned carbon nanotubes for use in high performance field effect transistors |
| EP3137416A1 (en) | 2014-04-29 | 2017-03-08 | Sol Voltaics AB | Methods of capturing and aligning an assembly of nanowires |
| WO2015184151A1 (en) * | 2014-05-28 | 2015-12-03 | University Of South Alabama | Apparatus and method for directional alignment of nanofibers in a porous medium |
| US9327979B1 (en) * | 2015-01-02 | 2016-05-03 | Wisconsin Alumni Research Foundation | Methods for removing polymer coatings from single-walled carbon nanotubes |
| US9425405B1 (en) | 2015-02-11 | 2016-08-23 | Wisconsin Alumni Research Foundation | Continuous, floating evaporative assembly of aligned carbon nanotubes |
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2017
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2018
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| JP2023052190A (ja) | 2023-04-11 |
| JP7206210B2 (ja) | 2023-01-17 |
| EP3592699A4 (en) | 2020-12-23 |
| US20180261772A1 (en) | 2018-09-13 |
| US10873026B2 (en) | 2020-12-22 |
| CN110382413A (zh) | 2019-10-25 |
| DK3592699T3 (da) | 2022-07-25 |
| JP2020512257A (ja) | 2020-04-23 |
| KR20190126793A (ko) | 2019-11-12 |
| KR102398984B1 (ko) | 2022-05-18 |
| WO2018164764A1 (en) | 2018-09-13 |
| EP3592699A1 (en) | 2020-01-15 |
| CN110382413B (zh) | 2023-08-18 |
| EP3592699B1 (en) | 2022-05-25 |
| JP7536123B2 (ja) | 2024-08-19 |
| PL3592699T3 (pl) | 2022-09-05 |
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