CN110382413B - 碳纳米管在受限沟道中的定向 - Google Patents

碳纳米管在受限沟道中的定向 Download PDF

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Publication number
CN110382413B
CN110382413B CN201880014965.2A CN201880014965A CN110382413B CN 110382413 B CN110382413 B CN 110382413B CN 201880014965 A CN201880014965 A CN 201880014965A CN 110382413 B CN110382413 B CN 110382413B
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carbon nanotubes
fluid suspension
organic material
material coated
coated carbon
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Chinese (zh)
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CN110382413A (zh
Inventor
M·S·阿诺德
K·R·吉恩金斯
G·J·布雷迪
P·戈帕兰
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Wisconsin Alumni Research Foundation
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Wisconsin Alumni Research Foundation
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C01B32/172—Sorting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/08—Aligned nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y10S977/745—Carbon nanotubes, CNTs having a modified surface
    • Y10S977/746—Modified with biological, organic, or hydrocarbon material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
    • Y10S977/847—Surface modifications, e.g. functionalization, coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/891—Vapor phase deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Yarns And Mechanical Finishing Of Yarns Or Ropes (AREA)
CN201880014965.2A 2017-03-10 2018-01-05 碳纳米管在受限沟道中的定向 Active CN110382413B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/455,587 US10873026B2 (en) 2017-03-10 2017-03-10 Alignment of carbon nanotubes in confined channels
US15/455,587 2017-03-10
PCT/US2018/012480 WO2018164764A1 (en) 2017-03-10 2018-01-05 Alignment of carbon nanotubes in confined channels

Publications (2)

Publication Number Publication Date
CN110382413A CN110382413A (zh) 2019-10-25
CN110382413B true CN110382413B (zh) 2023-08-18

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Country Link
US (1) US10873026B2 (enExample)
EP (1) EP3592699B1 (enExample)
JP (2) JP7206210B2 (enExample)
KR (1) KR102398984B1 (enExample)
CN (1) CN110382413B (enExample)
DK (1) DK3592699T3 (enExample)
ES (1) ES2923453T3 (enExample)
PL (1) PL3592699T3 (enExample)
WO (1) WO2018164764A1 (enExample)

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WO2020142770A1 (en) * 2019-01-04 2020-07-09 Atom Optoelectronics, Llc Carbon nanotube based radio frequency devices
WO2021043235A1 (zh) * 2019-09-04 2021-03-11 北京华碳元芯电子科技有限责任公司 一种制备高密度顺排碳纳米管薄膜的方法
US20220255001A1 (en) * 2021-02-08 2022-08-11 Wisconsin Alumni Research Foundation Selected-area deposition of highly aligned carbon nanotube films using chemically and topographically patterned substrates
US11631814B2 (en) 2021-07-15 2023-04-18 Wisconsin Alumni Research Foundation Two-dimensional carbon nanotube liquid crystal films for wafer-scale electronics
US20250054755A1 (en) * 2023-08-07 2025-02-13 Wisconsin Alumni Research Foundation Surface-water-assisted deposition of patterned films of aligned nanoparticles

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Also Published As

Publication number Publication date
JP2023052190A (ja) 2023-04-11
JP7206210B2 (ja) 2023-01-17
EP3592699A4 (en) 2020-12-23
US20180261772A1 (en) 2018-09-13
US10873026B2 (en) 2020-12-22
CN110382413A (zh) 2019-10-25
DK3592699T3 (da) 2022-07-25
ES2923453T3 (es) 2022-09-27
JP2020512257A (ja) 2020-04-23
KR20190126793A (ko) 2019-11-12
KR102398984B1 (ko) 2022-05-18
WO2018164764A1 (en) 2018-09-13
EP3592699A1 (en) 2020-01-15
EP3592699B1 (en) 2022-05-25
JP7536123B2 (ja) 2024-08-19
PL3592699T3 (pl) 2022-09-05

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