ES2578678T3 - Dispositivo semiconductor de puerta aislada de potencia de conmutación rápida - Google Patents

Dispositivo semiconductor de puerta aislada de potencia de conmutación rápida Download PDF

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Publication number
ES2578678T3
ES2578678T3 ES04737345.1T ES04737345T ES2578678T3 ES 2578678 T3 ES2578678 T3 ES 2578678T3 ES 04737345 T ES04737345 T ES 04737345T ES 2578678 T3 ES2578678 T3 ES 2578678T3
Authority
ES
Spain
Prior art keywords
door
semiconductor device
terminal
switching power
fast switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES04737345.1T
Other languages
English (en)
Inventor
Barend Visser
Ocker Cornelis De Jager
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AMBIXTRA Pty Ltd
Original Assignee
AMBIXTRA Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AMBIXTRA Pty Ltd filed Critical AMBIXTRA Pty Ltd
Application granted granted Critical
Publication of ES2578678T3 publication Critical patent/ES2578678T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Closed-Circuit Television Systems (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Un dispositivo de puerta aislada (30, 90, 110) que comprende una fuente conectada a un terminal de fuente (98, 122) de una puerta (34, 95, 114) conectado a un terminal de puerta (94, 118) y medios de capacitancia de entrada que proporcionan la capacidad de entrada (CG) entre el terminal de puerta y el terminal de fuente, los medios de capacidad de entrada comprendiendo o bien un condensador en serie (116) entre la puerta (95, 114) y el terminal de puerta (94, 118) o una capa de aislamiento (32) que tiene un espesor suficiente (dins) entre la puerta (34) y un canal del dispositivo de tal manera que cuando el dispositivo es conmutado entre un estado apagado y un estado encendido, una relación de (Cfiss/Ciiss) entre un valor final de la capacitancia de entrada (Cfiss) cuando el dispositivo está encendido y un valor inicial de la capacitancia de entrada (Ciiss) cuando el dispositivo está apagado es de 1 < Cfiss/Ciiss <2,0.

Description

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Claims (1)

  1. imagen1
ES04737345.1T 2003-01-21 2004-01-21 Dispositivo semiconductor de puerta aislada de potencia de conmutación rápida Expired - Lifetime ES2578678T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA200300552 2003-01-21
ZA200300552 2003-01-21
PCT/ZA2004/000005 WO2004066395A2 (en) 2003-01-21 2004-01-21 Fast switching power insulated gate semiconductor device

Publications (1)

Publication Number Publication Date
ES2578678T3 true ES2578678T3 (es) 2016-07-29

Family

ID=32772476

Family Applications (1)

Application Number Title Priority Date Filing Date
ES04737345.1T Expired - Lifetime ES2578678T3 (es) 2003-01-21 2004-01-21 Dispositivo semiconductor de puerta aislada de potencia de conmutación rápida

Country Status (8)

Country Link
US (2) US20060118832A1 (es)
EP (1) EP1586120B1 (es)
JP (2) JP5362955B2 (es)
CN (1) CN100508211C (es)
ES (1) ES2578678T3 (es)
HK (1) HK1091321A1 (es)
WO (1) WO2004066395A2 (es)
ZA (1) ZA200505759B (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8039897B2 (en) * 2008-12-19 2011-10-18 Fairchild Semiconductor Corporation Lateral MOSFET with substrate drain connection
US20120019284A1 (en) * 2010-07-26 2012-01-26 Infineon Technologies Austria Ag Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor
WO2014034346A1 (ja) * 2012-08-28 2014-03-06 シャープ株式会社 複合型半導体装置

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883413A (en) * 1972-09-25 1975-05-13 Avco Corp Ozone generator using pulsed electron beam and decaying electric field
US4038165A (en) * 1975-03-13 1977-07-26 Union Carbide Corporation Corona reaction method
SE456291B (sv) * 1980-02-22 1988-09-19 Rca Corp Vertikal mosfet-anordning innefattande en over kollektoromradet belegen skermelektrod for minimering av miller- kapacitansen och stromfortrengningen
US4438356A (en) * 1982-03-24 1984-03-20 International Rectifier Corporation Solid state relay circuit employing MOSFET power switching devices
US4491807A (en) * 1982-05-20 1985-01-01 Rca Corporation FET Negative resistance circuits
US4471245A (en) * 1982-06-21 1984-09-11 Eaton Corporation FET Gating circuit with fast turn-on capacitor
JPS6038877A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd 絶縁ゲ−ト半導体装置
US4713220A (en) * 1985-04-22 1987-12-15 National Distillers And Chemical Corporation Ozonator power supply
US4736121A (en) * 1985-09-10 1988-04-05 Sos Microelettronica S.p.A. Charge pump circuit for driving N-channel MOS transistors
US4683387A (en) * 1985-12-03 1987-07-28 The United States Of America As Represented By The Secretary Of The Air Force Quadrature switch apparatus for multi mode phase shift drivers
US4695936A (en) * 1986-02-07 1987-09-22 Astec Components, Ltd. Switching mode power supply start circuit
FR2596931B1 (fr) * 1986-04-04 1993-03-26 Thomson Csf Multiplicateur de tension continue pouvant etre integre a une structure semi-conductrice
US4764857A (en) * 1987-05-06 1988-08-16 Zenith Electronics Corporation Power supply start-up circuit with high frequency transformer
GB8713388D0 (en) 1987-06-08 1987-07-15 Philips Electronic Associated Semiconductor device
US4912335A (en) * 1988-03-07 1990-03-27 Dionics Inc. Means for rapid charging and dynamic discharging of a capacitively charged electrical device
US4869881A (en) * 1988-05-03 1989-09-26 Pillar Technologies, Inc. Ozone generator system
US4873460A (en) * 1988-11-16 1989-10-10 California Institute Of Technology Monolithic transistor gate energy recovery system
US5016070A (en) 1989-06-30 1991-05-14 Texas Instruments Incorporated Stacked CMOS sRAM with vertical transistors and cross-coupled capacitors
JP2975646B2 (ja) * 1989-06-30 1999-11-10 テキサス インスツルメンツ インコーポレイテツド 集積デバイス
JPH03138981A (ja) * 1989-10-25 1991-06-13 Hitachi Ltd 半導体素子
WO1991011826A1 (en) * 1990-02-01 1991-08-08 Quigg Fred L Mosfet structure having reduced gate capacitance and method of forming same
JPH03228376A (ja) * 1990-02-02 1991-10-09 Nippon Telegr & Teleph Corp <Ntt> 縦形二重拡散ｍｏｓｆｅｔ
JPH03286619A (ja) * 1990-04-02 1991-12-17 Mitsubishi Electric Corp 絶縁ゲート形半導体装置のゲート駆動回路および該回路を用いたフラッシュ制御装置
JPH05122035A (ja) * 1991-05-10 1993-05-18 Fuji Electric Co Ltd 駆動電源内蔵型半導体装置
US5504449A (en) * 1992-04-09 1996-04-02 Harris Corporation Power driver circuit
JPH05335582A (ja) * 1992-05-27 1993-12-17 Omron Corp 縦型ｍｏｓｆｅｔ装置およびその製造方法
US5392187A (en) * 1992-08-12 1995-02-21 North Carolina State University At Raleigh Integrated circuit power device with transient responsive current limiting means
JPH08321602A (ja) * 1995-05-26 1996-12-03 Fuji Electric Co Ltd Ｍｉｓ半導体装置およびその制御方法
US5977588A (en) * 1997-10-31 1999-11-02 Stmicroelectronics, Inc. Radio frequency power MOSFET device having improved performance characteristics
DE19905421B4 (de) * 1999-02-10 2005-07-28 Semikron Elektronik Gmbh Leistungshalbleiterbauelement mit reduzierter Millerkapazität
US6870405B2 (en) * 1999-02-24 2005-03-22 Potchefstroom University For Christian Higher Education Method for driving an insulated gate semiconductor device using a short duration pulse
US6291298B1 (en) * 1999-05-25 2001-09-18 Advanced Analogic Technologies, Inc. Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses
US6441652B1 (en) * 1999-06-24 2002-08-27 Koninklijke Philips Electroanics N.V. High efficiency high frequency resonant gate driver for power converter
JP3928837B2 (ja) * 1999-09-13 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路装置
KR20010040186A (ko) * 1999-10-27 2001-05-15 인터실 코포레이션 디모스, 절연게이트 바이폴라 트랜지스터, 및 금속 산화막반도체 전계 효과 트랜지스터 등의 전력 모스 소자의게이트 전하 및 게이트/드레인 정전용량 최소화기술
DE10038177A1 (de) * 2000-08-04 2002-02-21 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterschaltelement mit zwei Steuerelektroden
JP4322414B2 (ja) * 2000-09-19 2009-09-02 株式会社ルネサステクノロジ 半導体装置
US6589830B1 (en) * 2000-09-20 2003-07-08 Fairchild Semiconductor Corporation Self-aligned process for fabricating power MOSFET with spacer-shaped terraced gate
GB0028031D0 (en) * 2000-11-17 2001-01-03 Koninkl Philips Electronics Nv Trench-gate field-effect transistors and their manufacture
US6870220B2 (en) * 2002-08-23 2005-03-22 Fairchild Semiconductor Corporation Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses
US6573560B2 (en) * 2001-11-06 2003-06-03 Fairchild Semiconductor Corporation Trench MOSFET with reduced Miller capacitance
GB0130754D0 (en) * 2001-12-21 2002-02-06 Lucas Industries Ltd Switch control circuit
DE10211543B4 (de) * 2002-03-15 2005-06-30 Infineon Technologies Ag Schaltungsanordnung mit einem Feldeffekttransistor und Verfahren zum Betrieb der Schaltungsanordnung
DE10212149B4 (de) * 2002-03-19 2007-10-04 Infineon Technologies Ag Transistoranordnung mit Schirmelektrode außerhalb eines aktiven Zellenfeldes und reduzierter Gate-Drain-Kapazität

Also Published As

Publication number Publication date
WO2004066395A3 (en) 2004-09-02
JP5362955B2 (ja) 2013-12-11
HK1091321A1 (en) 2007-01-12
JP2013179344A (ja) 2013-09-09
US20080203457A1 (en) 2008-08-28
CN1836337A (zh) 2006-09-20
EP1586120B1 (en) 2016-04-27
JP2006516365A (ja) 2006-06-29
US8063426B2 (en) 2011-11-22
WO2004066395A2 (en) 2004-08-05
US20060118832A1 (en) 2006-06-08
CN100508211C (zh) 2009-07-01
ZA200505759B (en) 2007-02-28
EP1586120A2 (en) 2005-10-19

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