ES2104183T3 - Procedimiento para fabricar peliculas finas por evaporacion por laser excimero pulsatorio. - Google Patents
Procedimiento para fabricar peliculas finas por evaporacion por laser excimero pulsatorio.Info
- Publication number
- ES2104183T3 ES2104183T3 ES93923279T ES93923279T ES2104183T3 ES 2104183 T3 ES2104183 T3 ES 2104183T3 ES 93923279 T ES93923279 T ES 93923279T ES 93923279 T ES93923279 T ES 93923279T ES 2104183 T3 ES2104183 T3 ES 2104183T3
- Authority
- ES
- Spain
- Prior art keywords
- laser
- pulsatorio
- excimero
- evaporation
- procedure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming superconductor layers
- H10N60/0521—Processes for depositing or forming superconductor layers by pulsed laser deposition, e.g. laser sputtering; laser ablation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/732—Evaporative coating with superconducting material
Abstract
SE PRESENTA UN PROCESO PARA LA PRODUCCION DE PELICULAS DELGADAS DE UN MATERIAL SUPERCONDUCTOR QUE CONSISTE EN BOMBARDEAR UN OBJETIVO CALENTADO CON UNA RADIACION PROCEDENTE DE UN LASER DE UV DE ALTA ENERGIA PULSADO PARA FORMAR UNA PLUMA DE MATERIAL OBJETIVO Y DEPOSITAR LA PLUMA SOBRE UN SUSTRATO.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/963,156 US5290761A (en) | 1992-10-19 | 1992-10-19 | Process for making oxide superconducting films by pulsed excimer laser ablation |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2104183T3 true ES2104183T3 (es) | 1997-10-01 |
Family
ID=25506821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES93923279T Expired - Lifetime ES2104183T3 (es) | 1992-10-19 | 1993-10-13 | Procedimiento para fabricar peliculas finas por evaporacion por laser excimero pulsatorio. |
Country Status (12)
Country | Link |
---|---|
US (1) | US5290761A (es) |
EP (1) | EP0664927B1 (es) |
JP (1) | JPH08502626A (es) |
KR (1) | KR950703799A (es) |
AT (1) | ATE155613T1 (es) |
CA (1) | CA2146629A1 (es) |
DE (1) | DE69312307T2 (es) |
DK (1) | DK0664927T3 (es) |
ES (1) | ES2104183T3 (es) |
GR (1) | GR3024785T3 (es) |
TW (1) | TW232098B (es) |
WO (1) | WO1994009518A1 (es) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5660746A (en) * | 1994-10-24 | 1997-08-26 | University Of South Florida | Dual-laser process for film deposition |
US5535128A (en) * | 1995-02-09 | 1996-07-09 | The United States Of America As Represented By The Secretary Of The Air Force | Hierarchical feedback control of pulsed laser deposition |
US5741377A (en) * | 1995-04-10 | 1998-04-21 | Martin Marietta Energy Systems, Inc. | Structures having enhanced biaxial texture and method of fabricating same |
US6716795B2 (en) * | 1999-09-27 | 2004-04-06 | Ut-Battelle, Llc | Buffer architecture for biaxially textured structures and method of fabricating same |
US5711810A (en) * | 1996-12-04 | 1998-01-27 | The United States Of America As Represented By The Secretary Of The Army | Apparatus for variable optical focusing for processing chambers |
US5964966A (en) * | 1997-09-19 | 1999-10-12 | Lockheed Martin Energy Research Corporation | Method of forming biaxially textured alloy substrates and devices thereon |
US6022832A (en) * | 1997-09-23 | 2000-02-08 | American Superconductor Corporation | Low vacuum vapor process for producing superconductor articles with epitaxial layers |
US6027564A (en) * | 1997-09-23 | 2000-02-22 | American Superconductor Corporation | Low vacuum vapor process for producing epitaxial layers |
US6428635B1 (en) | 1997-10-01 | 2002-08-06 | American Superconductor Corporation | Substrates for superconductors |
US6458223B1 (en) | 1997-10-01 | 2002-10-01 | American Superconductor Corporation | Alloy materials |
US6137110A (en) * | 1998-08-17 | 2000-10-24 | The United States Of America As Represented By The United States Department Of Energy | Focused ion beam source method and apparatus |
US6114287A (en) * | 1998-09-30 | 2000-09-05 | Ut-Battelle, Llc | Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom |
US6296701B1 (en) | 1998-09-30 | 2001-10-02 | Ut-Battelle, Llc | Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom |
US6143366A (en) * | 1998-12-24 | 2000-11-07 | Lu; Chung Hsin | High-pressure process for crystallization of ceramic films at low temperatures |
US6475311B1 (en) | 1999-03-31 | 2002-11-05 | American Superconductor Corporation | Alloy materials |
KR100450749B1 (ko) * | 2001-12-28 | 2004-10-01 | 한국전자통신연구원 | 어븀이 도핑된 실리콘 나노 점 어레이 제조 방법 및 이에이용되는 레이저 기화 증착 장비 |
US6825462B2 (en) * | 2002-02-22 | 2004-11-30 | Agilent Technologies, Inc. | Apparatus and method for ion production enhancement |
US6858841B2 (en) * | 2002-02-22 | 2005-02-22 | Agilent Technologies, Inc. | Target support and method for ion production enhancement |
JP2007063631A (ja) * | 2005-08-31 | 2007-03-15 | Dowa Holdings Co Ltd | レーザーアブレージョン用ターゲットおよびその製造方法 |
JP6043487B2 (ja) * | 2012-01-31 | 2016-12-14 | 株式会社フジクラ | 超電導薄膜作製用ターゲットの製造方法と酸化物超電導線材の製造方法 |
WO2013180780A2 (en) | 2012-03-08 | 2013-12-05 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
EP4142457A1 (en) | 2017-02-01 | 2023-03-01 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
EP3540090A1 (en) | 2018-03-12 | 2019-09-18 | Solmates B.V. | Method for pulsed laser deposition |
US20200152851A1 (en) | 2018-11-13 | 2020-05-14 | D-Wave Systems Inc. | Systems and methods for fabricating superconducting integrated circuits |
JP2023531986A (ja) * | 2020-06-23 | 2023-07-26 | ディー-ウェイブ システムズ インコーポレイテッド | 超伝導集積回路を製造する方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5017554A (en) * | 1988-08-24 | 1991-05-21 | E. I. Du Pont De Nemours And Company | Superconducting metal oxide Tl-Pb-Ca-Sr-Cu-O compositions and processes for manufacture and use |
US5019552A (en) * | 1990-02-20 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Long-laser-pulse method of producing thin films |
JPH0532493A (ja) * | 1991-07-29 | 1993-02-09 | Sumitomo Electric Ind Ltd | 複合酸化物超電導薄膜の成膜方法 |
-
1992
- 1992-10-19 US US07/963,156 patent/US5290761A/en not_active Expired - Fee Related
-
1993
- 1993-10-13 KR KR1019950701476A patent/KR950703799A/ko not_active Application Discontinuation
- 1993-10-13 AT AT93923279T patent/ATE155613T1/de not_active IP Right Cessation
- 1993-10-13 DE DE69312307T patent/DE69312307T2/de not_active Expired - Fee Related
- 1993-10-13 JP JP6510107A patent/JPH08502626A/ja active Pending
- 1993-10-13 CA CA002146629A patent/CA2146629A1/en not_active Abandoned
- 1993-10-13 DK DK93923279.9T patent/DK0664927T3/da active
- 1993-10-13 ES ES93923279T patent/ES2104183T3/es not_active Expired - Lifetime
- 1993-10-13 EP EP93923279A patent/EP0664927B1/en not_active Expired - Lifetime
- 1993-10-13 TW TW082108460A patent/TW232098B/zh active
- 1993-10-13 WO PCT/US1993/009544 patent/WO1994009518A1/en active IP Right Grant
-
1997
- 1997-09-17 GR GR970402409T patent/GR3024785T3/el unknown
Also Published As
Publication number | Publication date |
---|---|
JPH08502626A (ja) | 1996-03-19 |
CA2146629A1 (en) | 1994-04-28 |
DE69312307T2 (de) | 1997-12-11 |
DE69312307D1 (de) | 1997-08-21 |
EP0664927A1 (en) | 1995-08-02 |
KR950703799A (ko) | 1995-09-20 |
TW232098B (es) | 1994-10-11 |
GR3024785T3 (en) | 1998-01-30 |
DK0664927T3 (da) | 1997-09-01 |
ATE155613T1 (de) | 1997-08-15 |
US5290761A (en) | 1994-03-01 |
EP0664927B1 (en) | 1997-07-16 |
WO1994009518A1 (en) | 1994-04-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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