KR950703799A - 펄스식 엑시머 레이저 증발에 의한 박막의 제조방법(process for making thin films by pulsed excimer laser evaporation) - Google Patents

펄스식 엑시머 레이저 증발에 의한 박막의 제조방법(process for making thin films by pulsed excimer laser evaporation) Download PDF

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KR950703799A
KR950703799A KR1019950701476A KR19950701476A KR950703799A KR 950703799 A KR950703799 A KR 950703799A KR 1019950701476 A KR1019950701476 A KR 1019950701476A KR 19950701476 A KR19950701476 A KR 19950701476A KR 950703799 A KR950703799 A KR 950703799A
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thin film
melting
superconducting thin
target material
target
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KR1019950701476A
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케니쓰 버나드 키팅
스티븐스 신트선 테
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미리암 디. 메코나헤이
이. 아이. 듀퐁 드 네모아 앤드 캄파니
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Publication of KR950703799A publication Critical patent/KR950703799A/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

가열된 타겟에 펄스식 고에너지 UV 레이저로 부터의 방사선으로 충격을 가하여 타겟 물질의 플룸을 형성하고 상기 플룸을 기재위에 부착시킴으로써 초전도정 물질의 박막을 제조하는 방법을 개시하고 있다.

Description

펄스식 엑시머 레이저 증발에 의한 박막의 제조방법(PROCESS FOR MAKING THIN FILMS BY PULSED EXCIMER LASER EVAPORATION)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (13)

  1. 융식전 및 융식도중에 융식 타겟을 그의 융점보다 약 500℃ 낮게 가열함을 포함하는, 펄스식 레이저 융식에 의해 기재위에 초전도성 박막을 부착시키기 위한 개선된 방법.
  2. 제1항에 있어서, 상기 타겟 물질 및 초전도성 박막이 각각 구리 산화물을 포함하는 방법.
  3. 제2항에 있어서, 상기 타겟 물질중 Y:Ba:Cu의 원자 비가 a:b:c(이때, a는 0.5 내지 1.5이고, b는 1.5 내지 2.5이며, c는 2.5 내지 3.5이다)인 방법.
  4. 제1항에 있어서, 상기 초전도성 박막이 YBaCuO7-x(이때, x는 0 내지 0.3이다)를 포함하는 방법.
  5. 제1항에 있어서, 상기 초전도성 박막이 TlePbaCabSrcCudOx(이때, a는 0.1 내지 1.5이고, b는 1 내지 4이며, c는 1 내지 3이고, d는 1 내지 5이며, e는 0.3내지 1이고, x는(a+b+c+d+e+y)이고, y는 0.5 내지 3이다)인 방법.
  6. 제2항에 있어서, 상기 타겟 물질이 TlePbaCabSrcCudOx(이때, a는 0.1 내지 1.5이고, b는 1 내지 4이며, c는 1 내지 3이고, d는 1 내지 5이며, e는 0.3내지 1이고, x는(a+b+c+d+e+y)이고, y는 0.5 내지 3이다)인 방법.
  7. 제1항에 있어서, 상기 초전도전성 물질을 융식시키기 전에 그의 융점 200℃ 이내로 가열하는 방법.
  8. 제1항에 있어서, 상기 타겟 물질이 그의 결정 비중이 60% 이상의 밀도 타겟을 가진 방법.
  9. 제1항에 있어서, 약 26Pa의 최대 압력에서 수행하는 방법.
  10. 제1항에 있어서, 상기 기재가 MgO, LaALO3, SrTIO3또는 이트리아-안정화된 지르코니아를 포함하는 방법.
  11. 제1항의 방법에 의한 생성물.
  12. 기재위에 부착된 최대치 1000㎛ 당 10개의 미립자를 가진 초전도성 박막.
  13. 제12항에 있어서, 약 0.1㎛ 내지 0.2㎛의 두께를 가진 박막.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950701476A 1992-10-19 1993-10-13 펄스식 엑시머 레이저 증발에 의한 박막의 제조방법(process for making thin films by pulsed excimer laser evaporation) KR950703799A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/963,156 US5290761A (en) 1992-10-19 1992-10-19 Process for making oxide superconducting films by pulsed excimer laser ablation
US07/963156 1992-10-19
PCT/US1993/009544 WO1994009518A1 (en) 1992-10-19 1993-10-13 Process for making thin films by pulsed excimer laser evaporation

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KR950703799A true KR950703799A (ko) 1995-09-20

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US (1) US5290761A (ko)
EP (1) EP0664927B1 (ko)
JP (1) JPH08502626A (ko)
KR (1) KR950703799A (ko)
AT (1) ATE155613T1 (ko)
CA (1) CA2146629A1 (ko)
DE (1) DE69312307T2 (ko)
DK (1) DK0664927T3 (ko)
ES (1) ES2104183T3 (ko)
GR (1) GR3024785T3 (ko)
TW (1) TW232098B (ko)
WO (1) WO1994009518A1 (ko)

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US5660746A (en) * 1994-10-24 1997-08-26 University Of South Florida Dual-laser process for film deposition
US5535128A (en) * 1995-02-09 1996-07-09 The United States Of America As Represented By The Secretary Of The Air Force Hierarchical feedback control of pulsed laser deposition
US6716795B2 (en) * 1999-09-27 2004-04-06 Ut-Battelle, Llc Buffer architecture for biaxially textured structures and method of fabricating same
US5741377A (en) * 1995-04-10 1998-04-21 Martin Marietta Energy Systems, Inc. Structures having enhanced biaxial texture and method of fabricating same
US5711810A (en) * 1996-12-04 1998-01-27 The United States Of America As Represented By The Secretary Of The Army Apparatus for variable optical focusing for processing chambers
US5964966A (en) * 1997-09-19 1999-10-12 Lockheed Martin Energy Research Corporation Method of forming biaxially textured alloy substrates and devices thereon
US6022832A (en) 1997-09-23 2000-02-08 American Superconductor Corporation Low vacuum vapor process for producing superconductor articles with epitaxial layers
US6027564A (en) * 1997-09-23 2000-02-22 American Superconductor Corporation Low vacuum vapor process for producing epitaxial layers
US6428635B1 (en) 1997-10-01 2002-08-06 American Superconductor Corporation Substrates for superconductors
US6458223B1 (en) 1997-10-01 2002-10-01 American Superconductor Corporation Alloy materials
US6137110A (en) * 1998-08-17 2000-10-24 The United States Of America As Represented By The United States Department Of Energy Focused ion beam source method and apparatus
US6296701B1 (en) 1998-09-30 2001-10-02 Ut-Battelle, Llc Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom
US6114287A (en) * 1998-09-30 2000-09-05 Ut-Battelle, Llc Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom
US6143366A (en) * 1998-12-24 2000-11-07 Lu; Chung Hsin High-pressure process for crystallization of ceramic films at low temperatures
US6475311B1 (en) 1999-03-31 2002-11-05 American Superconductor Corporation Alloy materials
KR100450749B1 (ko) * 2001-12-28 2004-10-01 한국전자통신연구원 어븀이 도핑된 실리콘 나노 점 어레이 제조 방법 및 이에이용되는 레이저 기화 증착 장비
US6825462B2 (en) * 2002-02-22 2004-11-30 Agilent Technologies, Inc. Apparatus and method for ion production enhancement
US6858841B2 (en) * 2002-02-22 2005-02-22 Agilent Technologies, Inc. Target support and method for ion production enhancement
JP2007063631A (ja) * 2005-08-31 2007-03-15 Dowa Holdings Co Ltd レーザーアブレージョン用ターゲットおよびその製造方法
JP6043487B2 (ja) * 2012-01-31 2016-12-14 株式会社フジクラ 超電導薄膜作製用ターゲットの製造方法と酸化物超電導線材の製造方法
WO2013180780A2 (en) 2012-03-08 2013-12-05 D-Wave Systems Inc. Systems and methods for fabrication of superconducting integrated circuits
JP7223711B2 (ja) 2017-02-01 2023-02-16 ディー－ウェイブ システムズ インコーポレイテッド 超伝導集積回路の製造のためのシステム及び方法
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US20200152851A1 (en) 2018-11-13 2020-05-14 D-Wave Systems Inc. Systems and methods for fabricating superconducting integrated circuits
WO2020168097A1 (en) 2019-02-15 2020-08-20 D-Wave Systems Inc. Kinetic inductance for couplers and compact qubits
US20230240154A1 (en) * 2020-06-23 2023-07-27 D-Wave Systems Inc. Methods for fabricating superconducting integrated circuits

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US5017554A (en) * 1988-08-24 1991-05-21 E. I. Du Pont De Nemours And Company Superconducting metal oxide Tl-Pb-Ca-Sr-Cu-O compositions and processes for manufacture and use
US5019552A (en) * 1990-02-20 1991-05-28 The United States Of America As Represented By The United States Department Of Energy Long-laser-pulse method of producing thin films
JPH0532493A (ja) * 1991-07-29 1993-02-09 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜の成膜方法

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Publication number Publication date
DK0664927T3 (da) 1997-09-01
EP0664927B1 (en) 1997-07-16
ATE155613T1 (de) 1997-08-15
DE69312307D1 (de) 1997-08-21
CA2146629A1 (en) 1994-04-28
DE69312307T2 (de) 1997-12-11
JPH08502626A (ja) 1996-03-19
ES2104183T3 (es) 1997-10-01
US5290761A (en) 1994-03-01
GR3024785T3 (en) 1998-01-30
TW232098B (ko) 1994-10-11
WO1994009518A1 (en) 1994-04-28
EP0664927A1 (en) 1995-08-02

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