ES2098658T3 - Dispositivo semiconductor con una capa intermedia intrinseca depositada por rf. - Google Patents
Dispositivo semiconductor con una capa intermedia intrinseca depositada por rf.Info
- Publication number
- ES2098658T3 ES2098658T3 ES93301048T ES93301048T ES2098658T3 ES 2098658 T3 ES2098658 T3 ES 2098658T3 ES 93301048 T ES93301048 T ES 93301048T ES 93301048 T ES93301048 T ES 93301048T ES 2098658 T3 ES2098658 T3 ES 2098658T3
- Authority
- ES
- Spain
- Prior art keywords
- intrinsic
- deposited
- layer
- intermediate layer
- layer deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
Abstract
SE PRESENTA UN METODO PARA MANUFACTURAR DISPOSITIVOS FOTOVOLTAICOS, DE PELICULA FINA DEL TIPO DE LOS QUE TIENEN UNA CAPA SEMICONDUCTORA INTRINSECA DISPUESTA ENTRE DOS CAPAS SEMICONDUCTORAS, CON CARGAS OPUESTAS. UNA CAPA SEPARADORA DE MATERIAL SEMICONDUCTOR INTRINSECO SE DEPOSITA MEDIANTE RF EN LA UNION ENTRE UNA CAPA INTRINSECA DE BASE, DEPOSITADA MEDIANTE MICROONDAS Y UNA CAPA DE MATERIAL DOPADO. LA PILA PRODUCIDA MEDIANTE EL METODO DE LA INVENCION TIENE UNAS CARACTERISTICAS MEJORADAS SOBRE LAS PILAS QUE TIENEN CAPAS INTRINSECAS DEPOSITADAS MEDIANTE MICROONDAS SIN NINGUNA CAPA DE BARRERA.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/836,225 US5256576A (en) | 1992-02-14 | 1992-02-14 | Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2098658T3 true ES2098658T3 (es) | 1997-05-01 |
Family
ID=25271482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES93301048T Expired - Lifetime ES2098658T3 (es) | 1992-02-14 | 1993-02-15 | Dispositivo semiconductor con una capa intermedia intrinseca depositada por rf. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5256576A (es) |
EP (1) | EP0561500B1 (es) |
AT (1) | ATE147546T1 (es) |
DE (1) | DE69307173D1 (es) |
ES (1) | ES2098658T3 (es) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163958A (ja) * | 1992-02-21 | 1994-06-10 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US5476798A (en) * | 1992-06-29 | 1995-12-19 | United Solar Systems Corporation | Plasma deposition process with substrate temperature control |
JP2761156B2 (ja) * | 1992-06-30 | 1998-06-04 | キヤノン株式会社 | 光起電力素子及びその製造方法、並びにそれを用いた発電装置 |
JP3073327B2 (ja) * | 1992-06-30 | 2000-08-07 | キヤノン株式会社 | 堆積膜形成方法 |
US5429685A (en) * | 1992-11-16 | 1995-07-04 | Canon Kabushiki Kaisha | Photoelectric conversion element and power generation system using the same |
DE69410301T2 (de) * | 1993-01-29 | 1998-09-24 | Canon Kk | Verfahren zur Herstellung funktioneller niedergeschlagener Schichten |
JP3659512B2 (ja) * | 1993-12-20 | 2005-06-15 | キヤノン株式会社 | 光起電力素子及びその形成方法及びその形成装置 |
JP2984537B2 (ja) * | 1994-03-25 | 1999-11-29 | キヤノン株式会社 | 光起電力素子 |
US6379994B1 (en) * | 1995-09-25 | 2002-04-30 | Canon Kabushiki Kaisha | Method for manufacturing photovoltaic element |
JP3025179B2 (ja) * | 1995-09-28 | 2000-03-27 | キヤノン株式会社 | 光電変換素子の形成方法 |
US5719076A (en) * | 1996-04-24 | 1998-02-17 | United Solar Systems Corporation | Method for the manufacture of semiconductor devices with optimized hydrogen content |
JPH11251612A (ja) * | 1998-03-03 | 1999-09-17 | Canon Inc | 光起電力素子の製造方法 |
US6468829B2 (en) | 2000-05-16 | 2002-10-22 | United Solar Systems Corporation | Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates |
DE102005019225B4 (de) * | 2005-04-20 | 2009-12-31 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie |
US8281917B1 (en) * | 2012-05-23 | 2012-10-09 | Paradigm Circuit Solutions Inc. | System and method to automate transport of electronic devices on an assembly line for testing |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
US4409605A (en) * | 1978-03-16 | 1983-10-11 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4517223A (en) * | 1982-09-24 | 1985-05-14 | Sovonics Solar Systems | Method of making amorphous semiconductor alloys and devices using microwave energy |
JPS6037129A (ja) * | 1983-08-10 | 1985-02-26 | Hitachi Ltd | 半導体製造装置 |
US4619729A (en) * | 1984-02-14 | 1986-10-28 | Energy Conversion Devices, Inc. | Microwave method of making semiconductor members |
DE151754T1 (de) * | 1984-02-14 | 1986-01-16 | Energy Conversion Devices, Inc., Troy, Mich. | Verfahren zur herstellung eines fotoleitfaehigen elementes und auf diese weise hergestellte fotoleitfaehige elemente. |
DE3572198D1 (en) * | 1984-02-14 | 1989-09-14 | Energy Conversion Devices Inc | Method and apparatus for making electrophotographic devices |
JPS62131513A (ja) * | 1985-12-04 | 1987-06-13 | Hitachi Ltd | 多室分離型プラズマcvd装置 |
JP2616929B2 (ja) * | 1987-08-22 | 1997-06-04 | 株式会社日本自動車部品総合研究所 | 微結晶炭化ケイ素半導体膜の製造方法 |
KR910007465B1 (ko) * | 1988-10-27 | 1991-09-26 | 삼성전관 주식회사 | 비정질 실리콘 태양전지의 제조방법 |
US5429685A (en) * | 1992-11-16 | 1995-07-04 | Canon Kabushiki Kaisha | Photoelectric conversion element and power generation system using the same |
-
1992
- 1992-02-14 US US07/836,225 patent/US5256576A/en not_active Expired - Lifetime
-
1993
- 1993-02-15 EP EP93301048A patent/EP0561500B1/en not_active Expired - Lifetime
- 1993-02-15 DE DE69307173T patent/DE69307173D1/de not_active Expired - Lifetime
- 1993-02-15 ES ES93301048T patent/ES2098658T3/es not_active Expired - Lifetime
- 1993-02-15 AT AT93301048T patent/ATE147546T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0561500A3 (en) | 1994-12-21 |
EP0561500A2 (en) | 1993-09-22 |
EP0561500B1 (en) | 1997-01-08 |
DE69307173D1 (de) | 1997-02-20 |
US5256576A (en) | 1993-10-26 |
ATE147546T1 (de) | 1997-01-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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