ES2074041T3 - Materiales de alimentacion de deposito y materiales de dopado utilizados en la fabricacion de las aleaciones de silicio amorfo hidrogenado para dispositivos fotovoltaicos y otros dispositivos semi-conductores. - Google Patents
Materiales de alimentacion de deposito y materiales de dopado utilizados en la fabricacion de las aleaciones de silicio amorfo hidrogenado para dispositivos fotovoltaicos y otros dispositivos semi-conductores.Info
- Publication number
- ES2074041T3 ES2074041T3 ES87102090T ES87102090T ES2074041T3 ES 2074041 T3 ES2074041 T3 ES 2074041T3 ES 87102090 T ES87102090 T ES 87102090T ES 87102090 T ES87102090 T ES 87102090T ES 2074041 T3 ES2074041 T3 ES 2074041T3
- Authority
- ES
- Spain
- Prior art keywords
- manufacture
- hydrogenated
- photovoltaic devices
- devices
- halogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 5
- 239000000463 material Substances 0.000 title abstract 3
- 229910000676 Si alloy Inorganic materials 0.000 title abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 4
- 150000002367 halogens Chemical group 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract 3
- 239000001257 hydrogen Substances 0.000 abstract 3
- 239000000203 mixture Chemical group 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical group [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 abstract 1
- 102100027345 Homeobox protein SIX3 Human genes 0.000 abstract 1
- 101000651928 Homo sapiens Homeobox protein SIX3 Proteins 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
- H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83007386A | 1986-02-18 | 1986-02-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2074041T3 true ES2074041T3 (es) | 1995-09-01 |
Family
ID=25256250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES87102090T Expired - Lifetime ES2074041T3 (es) | 1986-02-18 | 1987-02-13 | Materiales de alimentacion de deposito y materiales de dopado utilizados en la fabricacion de las aleaciones de silicio amorfo hidrogenado para dispositivos fotovoltaicos y otros dispositivos semi-conductores. |
Country Status (12)
| Country | Link |
|---|---|
| EP (1) | EP0233613B1 (OSRAM) |
| JP (1) | JPH06103667B2 (OSRAM) |
| KR (1) | KR910001876B1 (OSRAM) |
| CN (1) | CN1024929C (OSRAM) |
| AT (1) | ATE120884T1 (OSRAM) |
| AU (3) | AU604227B2 (OSRAM) |
| CA (1) | CA1332343C (OSRAM) |
| DE (1) | DE3751209T2 (OSRAM) |
| EG (1) | EG18056A (OSRAM) |
| ES (1) | ES2074041T3 (OSRAM) |
| IE (1) | IE870367L (OSRAM) |
| IN (1) | IN168381B (OSRAM) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EG18056A (en) * | 1986-02-18 | 1991-11-30 | Solarex Corp | Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices |
| EP0407088B1 (en) * | 1989-06-28 | 1998-05-06 | Mitsui Chemicals, Inc. | Method of forming an amorphous semiconductor film |
| DE3941997C1 (en) * | 1989-12-20 | 1991-01-24 | Phototronics Solartechnik Gmbh, 8011 Putzbrunn, De | Prepn. of di-, tri- or tetra-silyl-methane - by reacting aryl-halo-silane with di-, tri- or tetra -halo-methane in presence of reducing metal, and reacting prod. with hydrogen halide |
| DE3942058A1 (de) * | 1989-12-20 | 1991-06-27 | Phototronics Solartechnik Gmbh | Tetrasilylmethan und verfahren zu dessen herstellung |
| WO2000058409A1 (fr) * | 1999-03-30 | 2000-10-05 | Jsr Corporation | Composition pour revetement |
| KR101050377B1 (ko) | 2001-02-12 | 2011-07-20 | 에이에스엠 아메리카, 인코포레이티드 | 반도체 박막 증착을 위한 개선된 공정 |
| US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
| JP4970267B2 (ja) * | 2004-09-14 | 2012-07-04 | アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ | 珪素およびゲルマニウムの核原子付き水素化合物、および同化合物の合成法 |
| US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| EP1960310B1 (en) * | 2005-11-23 | 2013-08-21 | THE ARIZONA BOARD OF REGENTS, a body corporate acting on behalf of ARIZONA STATE UNIVERSITY | Silicon-germanium hydrides and methods for making and using same |
| EP1918414A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance |
| EP1918965A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method and apparatus for forming a film by deposition from a plasma |
| EP1918966A1 (en) * | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
| EP1919264A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Device for forming a film by deposition from a plasma |
| EP1923483A1 (en) | 2006-11-02 | 2008-05-21 | Dow Corning Corporation | Deposition of amorphous silicon films by electron cyclotron resonance |
| EP1918967B1 (en) | 2006-11-02 | 2013-12-25 | Dow Corning Corporation | Method of forming a film by deposition from a plasma |
| KR20100025507A (ko) | 2007-03-30 | 2010-03-09 | 레브 리뉴어블 에너지 벤쳐스 인코포레이티드 | 실리콘 테트라할라이드 또는 유기할로실란의 플라즈마를 이용한 유기작용화 |
| JP5638387B2 (ja) * | 2007-04-02 | 2014-12-10 | アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティＡＲＩＺＯＮＡ ＢＯＡＲＤ ＯＦ ＲＥＧＥＮＴＳ，ａ ｂｏｄｙ ｃｏｒｐｏｒａｔｅ ａｃｔｉｎｇ ｏｎ ｂｅｈａｌｆ ｏｆ ＡＲＩＺＯＮＡ ＳＴＡＴＥ ＵＮＩＶＥＲＳＩＴＹ | ハロシリルゲルマンの新規な製造方法および使用方法 |
| NO342873B1 (no) | 2008-02-11 | 2018-08-20 | Inst Energiteknik | Halvlederkomponent |
| CN103628044A (zh) * | 2013-11-07 | 2014-03-12 | 中山市创科科研技术服务有限公司 | 一种利用光化学气相沉积制备α_SiH膜的设备 |
| CN109686802A (zh) * | 2018-11-09 | 2019-04-26 | 惠州凯珑光电有限公司 | 一种电子元器件和模组的封装工艺 |
| TWI838011B (zh) * | 2021-12-23 | 2024-04-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | Ｖ族元素的新型無機矽基和聚矽基衍生物及其合成方法和使用其沈積之方法 |
| CN115117201B (zh) * | 2022-06-24 | 2024-03-12 | 英利能源发展有限公司 | 一种硅片磷或硼掺杂的方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
| FR2485810A1 (fr) * | 1980-06-24 | 1981-12-31 | Thomson Csf | Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede |
| JPS59182521A (ja) * | 1983-04-01 | 1984-10-17 | Mitsui Toatsu Chem Inc | 水素化シリコン薄膜の形成方法 |
| JPS59200248A (ja) * | 1983-04-28 | 1984-11-13 | Canon Inc | 像形成部材の製造法 |
| DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
| JPS60117712A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 薄膜形成方法 |
| JPS60154521A (ja) * | 1984-01-23 | 1985-08-14 | Semiconductor Energy Lab Co Ltd | 炭化珪素被膜作製方法 |
| JPH0669029B2 (ja) * | 1984-07-25 | 1994-08-31 | 工業技術院長 | Ｐ型半導体薄膜の形成方法 |
| US4695331A (en) * | 1985-05-06 | 1987-09-22 | Chronar Corporation | Hetero-augmentation of semiconductor materials |
| GB2177119B (en) * | 1985-06-26 | 1989-04-26 | Plessey Co Plc | Organometallic chemical vapour deposition |
| IL79612A0 (en) * | 1985-08-09 | 1986-11-30 | American Cyanamid Co | Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources |
| EG18056A (en) * | 1986-02-18 | 1991-11-30 | Solarex Corp | Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices |
| US4690830A (en) * | 1986-02-18 | 1987-09-01 | Solarex Corporation | Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
-
1987
- 1987-02-10 EG EG77/87A patent/EG18056A/xx active
- 1987-02-12 IE IE721419A patent/IE870367L/xx unknown
- 1987-02-13 ES ES87102090T patent/ES2074041T3/es not_active Expired - Lifetime
- 1987-02-13 EP EP87102090A patent/EP0233613B1/en not_active Expired - Lifetime
- 1987-02-13 AT AT87102090T patent/ATE120884T1/de active
- 1987-02-13 IN IN123/CAL/87A patent/IN168381B/en unknown
- 1987-02-13 DE DE3751209T patent/DE3751209T2/de not_active Expired - Fee Related
- 1987-02-16 CA CA000529799A patent/CA1332343C/en not_active Expired - Fee Related
- 1987-02-16 AU AU68839/87A patent/AU604227B2/en not_active Ceased
- 1987-02-17 JP JP62034388A patent/JPH06103667B2/ja not_active Expired - Lifetime
- 1987-02-18 CN CN87100729A patent/CN1024929C/zh not_active Expired - Fee Related
- 1987-02-18 KR KR1019870001347A patent/KR910001876B1/ko not_active Expired
-
1990
- 1990-09-24 AU AU63080/90A patent/AU640408B2/en not_active Ceased
- 1990-11-30 AU AU67671/90A patent/AU637852B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP0233613A2 (en) | 1987-08-26 |
| DE3751209T2 (de) | 1995-08-10 |
| AU6883987A (en) | 1987-08-20 |
| CN87100729A (zh) | 1987-11-25 |
| DE3751209D1 (de) | 1995-05-11 |
| EG18056A (en) | 1991-11-30 |
| JPH06103667B2 (ja) | 1994-12-14 |
| AU6308090A (en) | 1990-12-13 |
| KR910001876B1 (ko) | 1991-03-28 |
| JPS6351680A (ja) | 1988-03-04 |
| AU6767190A (en) | 1991-03-14 |
| EP0233613A3 (en) | 1990-11-28 |
| CA1332343C (en) | 1994-10-11 |
| AU637852B2 (en) | 1993-06-10 |
| IN168381B (OSRAM) | 1991-03-23 |
| AU640408B2 (en) | 1993-08-26 |
| AU604227B2 (en) | 1990-12-13 |
| EP0233613B1 (en) | 1995-04-05 |
| CN1024929C (zh) | 1994-06-08 |
| ATE120884T1 (de) | 1995-04-15 |
| IE870367L (en) | 1987-08-18 |
| KR870008376A (ko) | 1987-09-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG2A | Definitive protection |
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