SE9603608D0 - A method for producing a region doped with boron in a SiC-layer - Google Patents
A method for producing a region doped with boron in a SiC-layerInfo
- Publication number
- SE9603608D0 SE9603608D0 SE9603608A SE9603608A SE9603608D0 SE 9603608 D0 SE9603608 D0 SE 9603608D0 SE 9603608 A SE9603608 A SE 9603608A SE 9603608 A SE9603608 A SE 9603608A SE 9603608 D0 SE9603608 D0 SE 9603608D0
- Authority
- SE
- Sweden
- Prior art keywords
- boron
- layer
- sic
- producing
- sic layer
- Prior art date
Links
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052796 boron Inorganic materials 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 238000000137 annealing Methods 0.000 abstract 1
- 125000004432 carbon atom Chemical group C* 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9603608A SE9603608D0 (sv) | 1996-10-03 | 1996-10-03 | A method for producing a region doped with boron in a SiC-layer |
| US08/735,389 US6703294B1 (en) | 1996-10-03 | 1996-10-21 | Method for producing a region doped with boron in a SiC-layer |
| JP51643598A JP4141505B2 (ja) | 1996-10-03 | 1997-09-25 | ＳｉＣ層中にボロンをドープされた領域を生成する方法 |
| DE69719527T DE69719527T2 (de) | 1996-10-03 | 1997-09-25 | VERFAHREN ZUM DOTIEREN EINES BEREICHES MIT BOR IN EINER SiC-SCHICHT |
| PCT/SE1997/001615 WO1998014645A1 (en) | 1996-10-03 | 1997-09-25 | A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER |
| EP97944245A EP0931187B1 (en) | 1996-10-03 | 1997-09-25 | A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9603608A SE9603608D0 (sv) | 1996-10-03 | 1996-10-03 | A method for producing a region doped with boron in a SiC-layer |
| US08/735,389 US6703294B1 (en) | 1996-10-03 | 1996-10-21 | Method for producing a region doped with boron in a SiC-layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE9603608D0 true SE9603608D0 (sv) | 1996-10-03 |
Family
ID=32473861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9603608A SE9603608D0 (sv) | 1996-10-03 | 1996-10-03 | A method for producing a region doped with boron in a SiC-layer |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6703294B1 (sv) |
| EP (1) | EP0931187B1 (sv) |
| JP (1) | JP4141505B2 (sv) |
| DE (1) | DE69719527T2 (sv) |
| SE (1) | SE9603608D0 (sv) |
| WO (1) | WO1998014645A1 (sv) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7618880B1 (en) * | 2004-02-19 | 2009-11-17 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
| US8617965B1 (en) * | 2004-02-19 | 2013-12-31 | Partial Assignment to University of Central Florida | Apparatus and method of forming high crystalline quality layer |
| JP5155536B2 (ja) * | 2006-07-28 | 2013-03-06 | 一般財団法人電力中央研究所 | ＳｉＣ結晶の質を向上させる方法およびＳｉＣ半導体素子の製造方法 |
| JP5528515B2 (ja) * | 2006-07-28 | 2014-06-25 | 一般財団法人電力中央研究所 | ＳｉＣバイポーラ型半導体素子 |
| US8940598B2 (en) * | 2010-11-03 | 2015-01-27 | Texas Instruments Incorporated | Low temperature coefficient resistor in CMOS flow |
| JP6376729B2 (ja) * | 2013-05-21 | 2018-08-22 | ローム株式会社 | 半導体装置の製造方法 |
| US10304939B2 (en) * | 2013-11-13 | 2019-05-28 | Mitsubishi Electric Corporation | SiC semiconductor device having pn junction interface and method for manufacturing the SiC semiconductor device |
| JP6289952B2 (ja) * | 2014-03-19 | 2018-03-07 | 株式会社東芝 | ＳｉＣエピタキシャル基板の製造方法、半導体装置の製造方法 |
| US10403509B2 (en) * | 2014-04-04 | 2019-09-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing |
| US10020366B2 (en) * | 2015-09-25 | 2018-07-10 | The United States Of America, As Represented By The Secretary Of The Navy | Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphology |
| US11127817B2 (en) * | 2018-07-13 | 2021-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Formation of semiconductor device structure by implantation |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4209474A (en) | 1977-08-31 | 1980-06-24 | General Electric Company | Process for preparing semiconducting silicon carbide sintered body |
| ZA933939B (en) * | 1992-06-05 | 1993-12-30 | De Beers Ind Diamond | Diamond doping |
| US5323022A (en) * | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
| US5318915A (en) * | 1993-01-25 | 1994-06-07 | North Carolina State University At Raleigh | Method for forming a p-n junction in silicon carbide |
| US5543637A (en) * | 1994-11-14 | 1996-08-06 | North Carolina State University | Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein |
| US5964943A (en) | 1994-12-27 | 1999-10-12 | Siemens Aktiengesellschaft | Method of producing boron-doped monocrystalline silicon carbide |
-
1996
- 1996-10-03 SE SE9603608A patent/SE9603608D0/sv unknown
- 1996-10-21 US US08/735,389 patent/US6703294B1/en not_active Expired - Lifetime
-
1997
- 1997-09-25 JP JP51643598A patent/JP4141505B2/ja not_active Expired - Lifetime
- 1997-09-25 DE DE69719527T patent/DE69719527T2/de not_active Expired - Lifetime
- 1997-09-25 WO PCT/SE1997/001615 patent/WO1998014645A1/en active IP Right Grant
- 1997-09-25 EP EP97944245A patent/EP0931187B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0931187B1 (en) | 2003-03-05 |
| EP0931187A1 (en) | 1999-07-28 |
| US6703294B1 (en) | 2004-03-09 |
| DE69719527D1 (de) | 2003-04-10 |
| JP4141505B2 (ja) | 2008-08-27 |
| JP2001501162A (ja) | 2001-01-30 |
| DE69719527T2 (de) | 2003-12-24 |
| WO1998014645A1 (en) | 1998-04-09 |
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