Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
  • B23K26/03—Observing, e.g. monitoring, the workpiece
  • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
  • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
  • B23K26/046—Automatically focusing the laser beam
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
  • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
  • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
  • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
  • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
  • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
  • B23K26/0626—Energy control of the laser beam
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/08—Devices involving relative movement between laser beam and workpiece
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/08—Devices involving relative movement between laser beam and workpiece
  • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/08—Devices involving relative movement between laser beam and workpiece
  • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
  • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
  • B23K26/0861—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane in at least in three axial directions
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
  • B23K26/50—Working by transmitting the laser beam through or within the workpiece
  • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
  • B32B43/006—Delaminating
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K2101/00—Articles made by soldering, welding or cutting
  • B23K2101/36—Electric or electronic devices
  • B23K2101/40—Semiconductor devices
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B2310/00—Treatment by energy or chemical effects
  • B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
  • B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
  • B32B2310/0843—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using laser
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
  • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
  • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
  • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
  • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
  • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
  • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Definitions

• the present invention relates to a method for separating a temporarily bonded substrate stack according to claim 1 and a device according to claim 6.
• connection There are innumerable methods in the art for connecting substrates together.
• the purpose of the connection is either permanent or temporary substrate stacks. If the substrates are temporarily connected, in particular by means of a bonding layer, they are separated from each other again at a different time in the process chain. The separation process is called
• Focused laser beam with high power and defined wavelength from the substrate stack interface area of two substrates and leads by the high energy input into the bonding layer to a solution of both substrates from each other.
• a problem in the prior art is that destruction of the substrates, in particular of expensive functional components of the substrates, can take place by the application of laser beams. It is therefore the object of the present invention to eliminate the disadvantages of the prior art and in particular to ensure a non-destructive, but nevertheless effective separation of the substrate stack.
• the invention shows that by evaluating the correct
• the introduced energy of the laser beams for at least partial destruction of the temporary bonding layer (bonding layer) must be strong enough to cause an efficient separation.
• the introduced laser power must not exceed a power which would destroy the substrate surfaces, on which in particular functional components can be located.
• the introduced energy of the laser beams leads to at least partial weakening (preferably complete reduction) of the adhesion strength of the temporary bonding layer.
• Bonding layer is minimized, in particular thermal and / or photothermal load on the functional components.
• a central idea of the invention is, in particular, to disclose a device and a method with the aid of which monitoring and / or adaptation the laser parameter and / or a monitoring of the bonding layer during the application of the bonding layer of the substrate stack can take place.
• the two substrates of the substrate stack are connected to one another by at least one bonding layer, in particular a temporary bonding layer, preferably a bonding adhesive. It would also be conceivable to use a plurality of connection layers, in particular with different ones
• Connecting layer has a release layer.
• Loading the release layer is chemically and / or physically changed so that the adhesion between the substrates, in particular completely, is reduced.
• Another core idea of the invention is, in particular, a
• Substrate stack in high volume manufacturing (HVM) with high throughput and minimal control effort can be separated.
• the laser parameters are optimized as results of measurement series and / or as parameters of controlled variables.
• the measured values recorded such as laser beam intensity, profile shape, area uniformities of the separated stack, homogeneity of the laser beam are determined by, in particular, automatic return loops in control / or. Control units, especially computers merged and / or evaluated.
• the optimized controlled variables are then used for further debonding and / or measurement series.
• the minimum control effort remaining after the aforementioned determination of the optimum laser parameters relates in particular to the in-situ measurement of the laser beam properties, the radiation being directed at least partially and / or temporarily not at the substrate stack but directly at a laser beam sensor This allows the control of the respective state of the radiation source in particular to correct settings, aging phenomena.
• a raster movement of the laser beam in raster steps has one or more of the following trajectories and / or paths:
• Coordinate direction of the laser beam illuminates the substrate stack, wherein after completion of a line, the next line is illuminated in the same direction.
• X-y scan with back and forth movement the laser beam illuminates a line in one direction, the next line is illuminated, in particular seamless, in the opposite direction / scanned and so on.
• Circular scan in particular, closed, full-length
• Circular rings performed by the raster movement.
• Random spot scan with location limit The grid movement is with
• Random processes such as a random number generator coupled, wherein after a laser pulse, the subsequent laser pulse at a distance of greater than 5 microns, preferably greater than 50 microns, more preferably greater than 500 microns, more preferably greater than 5 mm at a random calculated spot takes place.
• the areas treated with laser pulse as well as non-treated surfaces are continuously updated, so that the device selects the next spot, in particular automatically randomly from the set of untreated areas.
• a raster step corresponds in particular to the illumination of a
• a minimum distance between two successive grid steps is adjustable in all the aforementioned grid movements.
• Minimum distance is in particular greater than the diameter of the
• Irradiation area preferably at least twice as large as the
• the minimum control effort can be minimized by the laser beam during
• the device according to the invention is preferably designed so that not only the monitoring and / or adjustment of the laser parameters take place, but at the same time a laser bond with the laser beams can be performed.
• existing laser bonding systems can advantageously be expanded to a device according to the invention by installing detection means according to the invention.
• existing debonding devices can be retrofitted with the measuring device according to the invention as well as control device and method.
• control device and method As an independent invention we hereby discloses a retrofit kit to equip existing devices of the prior art with the functionality of the invention.
• the invention particularly describes an apparatus and a method by means of which an in-situ measurement of a debonding process, in particular of a Laserdebondvorganges, is possible.
• the invention is based in particular on the idea of measuring the transmitted and / or reflected intensity of the laser beam coupled into the substrate stack by at least one sensor, preferably a sensor field, and in particular by the sensor
• the device and the method are preferably in one
• Transmission mode used because the positioning of the detectors on the side opposite to the optical system, technically easier to implement.
• the transmitted and / or reflected laser power can be determined in-situ, in particular spatially resolved.
• the recorded data provide conclusions about the effect of the laser on the bonding layer.
• the thickness of a release layer according to the invention is preferably between 0.0001 ⁇ and 1000 ⁇ , preferably between 0.005 ⁇ and 500 ⁇ , more preferably between 0.001 ⁇ and 400 ⁇ , most preferably between 0.05 ⁇ and 300 ⁇ , most preferably between 0.01 ⁇ and 200 ⁇ .
• the thickness of the, in particular the release layer having, Temporärbond harsh is preferably between 0.001 ⁇ and 1000 ⁇ , more preferably between 0.005 ⁇ and 500 ⁇ , more preferably between 0.01 ⁇ and 400 ⁇ , am
• the laser dissolves the release layer of the temporary boundary layer and thus carries out the separation, that is to say the debonding process.
• the laser beams dissociate chemical compounds that result in a reduction in adhesion.
• adjustable, laser beam dissolves in a preferred embodiment of the debonders a direct photochemical reaction in the Temporärbond Anlagen which directly changes the bonds of the temporary color layer, in particular the release layer of the temporary color layer, in a particularly irreversible manner, so that the adhesive strength of the layer is reduced, in particular eliminated.
• the direct photochemical reaction in particular no heating of the substrate or of the substrate stack.
• the temperature increase compared to the starting temperature of the entire substrate stack is limited to less than 100 ° C, preferably less than 50 ° C, preferably less than 25 ° C, with particular preference less than 15 ° C.
• the local heating in the laser spot is in particular less than 2000 ° C, preferably less than 1500 ° C, more preferably less than 1000 ° C, most preferably less than 500 ° C, most preferably less than 250 ° C.
• the substrate stack is heated globally by less than 100 ° C, more preferably less than 50 ° C, more preferably less than 25 ° C.
• the reaction temperature measured globally on the substrate in the device, is in particular between 0 ° C. and 300 ° C., preferably between 10 ° C. and 200 ° C., more preferably between room temperature / atmospheric temperature and 40 ° C.
• Laser beam properties in particular wavelength, pulse duration, homogeneity, beam cross-section and / or light energy to be adjustable so that a
• photochemical or a photothermal reaction or a mixed form of both types of reactions takes place.
• photochemical and / or photothermal reactions in organic materials can lead to complete carbonization of the organic material. Including the chemical removal of all atoms with
• Reaction product of the carbonization is formed as a layer, has a high
• the device according to the invention comprises an optical system with the aid of which laser beams generated by a laser can be directed onto a substrate stack and whose parameters (in particular their power) are measured in the reflection and / or transmission mode.
• the optical system is preferably statically connected to a base by a frame.
• Substrate stacks are fixed on a substrate holder.
• the substrate holder preferably has fixations.
• the fixations serve to hold the substrates.
• the fixations are selected in particular from one or more of the following fixations:
• Vakuumfix in particular with individually controllable and / or interconnected vacuum paths, and / or
• Adhesive fixations in particular gel-Pak fixations and / or
• Fixations with adhesive in particular controllable, surfaces.
• the fixings are in particular electronically by a, preferably
• Vacuum fixation is the preferred fixation.
• the vacuum fixation preferably consists of a plurality of vacuum webs, which emerge on the surface of the sample holder.
• the vacuum paths are preferably individually controllable. In a technically easier to implement application, some vacuum paths are too
• Vacuum blade segments united which are individually controllable. They can be evacuated or flooded. Each vacuum segment is preferably independent of the other vacuum segments. The vacuum segments are preferably designed annular. As a result, a targeted, radially symmetric, in particular from inside to outside or vice versa running fixation or detachment of a substrate from the sample holder allows.
• the debonding device can contain at least one control and / or regulating unit, in particular a computer, which contains the
• a relative movement can take place between the optical system and the substrate holder.
• the substrate holder moves while the optical system, frame, and base are statically arranged.
• Substrate stack or the separate substrates are known in the art Lade regarding. Entladesequenzen provided.
• the device is
• a raster device is a device according to the invention in which a relative movement takes place in an X-Y plane formed by the substrate stack to the optical system, in particular the laser beams aligned normal to the substrate stack in a Z direction.
• the laser can in this case by a continuous, in particular full-surface, scanning the entire bonding layer of the
• At least one detector is fixed statically to the optical system.
• laser beams are emitted by the device, which irradiate the substrate stack over its entire surface
• the measurement of the laser beams is preferably carried out by means of a field of detectors, which measure the transmitted and / or reflected load radiation position-dependent.
• a relative movement of at least one detector takes place relative to the static substrate stack, to the transmitted and / or reflected laser radiation
• the power of the laser measured as light output, in particular
• Radiation power which can be emitted continuously on the substrate, is in particular at least 5 W, preferably more than 10 W, still
• the preferred wavelength range of the laser is between 100 nm -
• the wavelength of the laser is adjustable and / or filterable in a particularly preferred embodiment by means of frequency converters, in particular acousto-optic modulators, in particular Bragg cells.
• the laser beam includes at least one wavelength of the total of 1064 nm, 420 nm, 380 nm, 343 nm, 318 nm, 308 nm, 280 nm.
• laser beams having at least two wavelengths are particularly advantageous, in particular to be able to effect photochemical and photothermal processes combined in the bonding layer.
• Beam source is a diode laser.
• the total energy of the laser radiation per substrate is set in particular between 0.01 mJ and 5000 kJ, preferably between 0.1 mJ and 4000 kJ, more preferably between 1 00 mJ and 2000 kJ.
• the laser beam can be operated in continuous mode or pulsed.
• the pulse frequency is in particular between 0.1 Hz and 300 MHz, preferably between 100 Hz and 500 kHz, more preferably between 10 kHz and
• 400 kHz most preferably between 1 00 kHz to 300 kHz set.
• the number of pulses per substrate stack is preferably more than 1 million pulses, preferably more than 3 million pulses, more preferably more than 5 million pulses, very particularly preferably 6 million pulses.
• the energy which strikes the substrate stack per pulse irradiation is set in particular between 0.1 nJ and 1 J, preferably between 1 nJ and 900 ⁇ , particularly preferably between 10 nJ and 500 ⁇ 5.
• the irradiation area per pulse is in particular between 1 ⁇ 2 and
• 100,000 ⁇ 2 preferably 10000 ⁇ 2 and 50,000 ⁇ 2 , more preferably 1000 ⁇ 2 and 40000 ⁇ 2 , most preferably between 2500 ⁇ 2 and 26000 ⁇ 2 .
• Synonyms for the irradiation area are known to the person skilled in the art as spot size, laser spot size.
• the shape of the irradiation surface is in particular circular, in other preferred embodiments elliptical, in particularly preferred
• Embodiments rectangular.
• optical elements in particular one or more of the following are selected according to the invention:
• Mirror in particular plane mirror, convex mirror or concave mirror
• o convex lenses in particular biconvex, plankton convex or
• Diffraction elements in particular diffraction gratings
• the optical components can consist of simple lenses and / or corrected lenses, such as achromats and / or apochromats, and lens groups composed of a plurality of lenses, in particular adjustable in relation to one another.
• the substrates may have any shape, but are preferably circular.
• the diameter of the substrates is in particular industrially standardized. For wafers, industry standard diameters are 1 inch, 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, 12 inches, and 18 inches. However, the embodiment according to the invention can basically handle any substrate, regardless of its diameter.
• the substrates are designed to be transparent, in particular for the laser.
• At least one, more preferably both, substrates are a glass substrate.
• the substrate stack consists of a carrier substrate which is transparent to the laser radiation, of a non-transparent, in particular partially metallised, reflective product substrate and of the
• the carrier substrate is first removed from the
• the substrate stack can be fixed to the substrate holder such that not the carrier substrate but the product substrate is first irradiated by the laser beam.
• the transmittance in the optical path at least through the carrier substrate to the connecting layer with respect to the laser used is preferably greater than 5%, more preferably greater than 25%, more preferably greater than 50%, even more preferably greater for a substrate or a substrate stack according to the invention than 75%, most preferably greater than 90%.
• the telescopes are in particular telescopes that can be switched very quickly, in particular, the focal point can be changed very quickly.
• Focus points is in particular greater than 1 Hz, preferably greater than 10 Hz, even more preferably greater than 100 Hz, most preferably greater than 1000 Hz, most preferably greater than 10000 Hz.
• the length within which the focus point can be changed is
• 0.1 mm in particular greater than 0.1 mm, preferably greater than 1 mm, more preferably greater than 5 mm, most preferably greater than 10 mm, most preferably greater than 20 mm.
• the embodiment according to the invention may have several telescopes, in particular more than 1 telescope, preferably more than 2 telescopes, more preferably more than 3 telescopes, most preferably more than 4 telescopes, most preferably more than 5 telescopes.
• the telescopes are used in particular for the dynamic enlargement / reduction of the beam shape and thus the
• the adjustment of the focus allows the correct positioning of the
• the beam can be formed by any number and combination of optical elements.
• the beam shape is the geometrical cut figure that arises when you cut the laser beam with a plane.
• the geometric sectional figure of the beam with the bonding layer is identical to the ablation surface / irradiation surface.
• Conceivable beam forms are:
• the intensity profiles that is to say the course of the intensity along a direction through the beam shape, can be set as desired.
• Preferred intensity profiles are
• the adjustment possibilities of the beam shapes and the intensity profiles are used in particular to optimize homogeneity.
• the following is an ideal example.
• a laser beam with a square beam shape of 1 ⁇ side length and a perfect rectangular intensity profile would generate at a pitch of 1 ⁇ in the x and y directions with complete scanning of the surface a completely homogeneous irradiation. Since the generation of a laser beam with a perfect square beam shape and a perfect rectangular radiation profile is not possible, the homogeneity of the irradiated surface is approximated by superposing other beam shapes and / or other intensity profiles.
• the beam shape defines the ablation area / irradiation area.
• the ablation surface also referred to as the ablation point in the limit of a small area, is the intersection of the laser beam with that part of the bonding layer which is destroyed by the laser beam and / or in particular irreversibly changed.
• the shape and / or size of the ablation surface has a direct influence on the power density of the laser in that area and thus can be used to selectively control the ablation.
• the size of the ablation surface can be adjusted in particular by optical elements, preferably by telescopes. It is also conceivable one Relative displacement between the substrate stack and the optical system, as long as the laser directed at the substrate stack is not parallel i siert ie
• a second telescope can be used for an affine transformation, in particular scaling, of the ablation surface.
• the debonding process can be applied in particular to the materials of the substrate stack, in particular the material of the interface layer.
• the beam shape and / or the intensity profile can be controlled remotely, in particular automatically, adjusted and controlled, regulated in another embodiment, in particular during the Debondvorgangs.
• the change of the beam shape and / or the intensity profile can be controlled remotely, in particular automatically, adjusted and controlled, regulated in another embodiment, in particular during the Debondvorgangs.
• the device according to the invention preferably has a
• Laser beam shape sensor laser beam shape sensor, laser beam profiler
• laser beam shape sensor laser beam shape sensor, laser beam profiler
• Laser beam can be measured quantitatively.
• the laser beam shape sensor is positioned outside of the sample holder. Part of the laser beam is extracted by optical elements and redirected to the laser beam shaping sensor.
• a laser beam shape sensor is installed in the sample holder, in particular embedded in the holding surface of the sample holder, preferably flush.
• the device according to the invention preferably has a
• Laser beam energy sensor laser beam energy sensor with the aid of which the energy of the laser beam, in particular in-situ, i. during the
• Laser beam energy sensors can be embodied as laser power sensors.
• the first embodiment of the invention the
• Laser beam energy sensor positioned outside the sample holder. Part of the laser beam is coupled out by optical elements and into the
• a laser beam energy sensor is incorporated in the sample holder, in particular in the holding surface of the sample holder, preferably flush embedded.
• a laser beam shape sensor and / or a laser beam energy sensor is positioned so that a portion of the
• Laser beam is coupled out by optical elements and redirected before it can penetrate into the substrate stack.
• Substrate stack penetrates or applied.
• the measurements serve in particular as reference or reference values.
• Laser beam energy sensor below the substrate stack in particular in
• Substrate stack positioned to measure the reflected from the substrate stack, in particular from the bonding layer and / or metallization of the product substrate radiation. In this case, reflected signals are analyzed.
• laser beam shape sensor and laser beam energy sensor are installed in one device.
• Laser beam shape sensors and laser beam energy sensors are further referred to by the generic term laser beam sensors.
• each laser beam sensor can forward its data to a control system, so that an in-situ analysis of the laser beam properties takes place.
• the Results of the analysis of the laser beam properties can then be used to adjust the laser beam.
• a control loop is formed. The analysis and control takes place in particular by means of hardware and / or firmware and / or
• the substrate holder is one or more
• Photosensitive devices are selected according to the invention from one or more of the following devices:
• Photosensitive sensors in particular photodiodes
• thermocouple in particular thermocouple or thermopile
• Camera especially CCD camera or CMOS camera.
• the devices according to the invention allow in particular the determination of one or more of the following points:
• T transmittance
• o is preferably over 99.9% of the laser radiation in the
• Temporary BOND layer to be measured on the dose From the temporal behavior, at least in analogy to the Williams-Landel-Ferry equation or with another time-temperature superposition approach to the thermal behavior of the
• Temporäreond Anlagen be closed. o Furthermore, from the number of repeated pulses on a spot, the necessary dose for an optimized dose which protects the product substrate is determined with the aid of known statistical algorithms.
• the device has an edge cleaning module.
• the edge cleaning module serves to remove the excess material (eg, adhesive) used to temporarily bond the substrates.
• the excess material of the bonding layer can be pressed, in particular by the bonding process, very close to the substrate edge or beyond and thus contaminate the outer edge regions.
• the material is removed before starting to separate the substrates.
• the laser radiation is used exclusively at an edge zone of the substrate stack in order to be able to separate special ZoneBond substrate stacks, as are mentioned in particular in the publication US2009 / 0218560A1.
• the embodiment according to the invention can also be used in such a way that a complete debond is not carried out, but at some points the adhesion property is retained. This prevents the substrates from immediately falling apart completely and being removed from each other. The substrate stack is thus still transportable, however, the substrates are separated by minimal application of force.
• Debondvoriques can temporarily weaken the Temporärbond für that the adhesive properties remain so far in particular in the edge region so far that the substrate stack at a later date, in particular mechanically, is separable from each other.
• the transmission properties in the edge region are measured if a corresponding edge layer removal is to take place.
• temporarily bonded substrates have a temporary boundary layer, which is found in the
• edge bead (English: edge bead). This edge bead is thicker according to experience, in particular also denser.
• Measuring process in particular a raster measurement process, in which a laser debonding process can be performed in particular at the same time.
• the irradiation of the interface or bonding layer can take place several times. For this, the raster process becomes multiple
• the number of irradiations of the ablation area is therefore in particular greater than 1, preferably greater than 2, more preferably greater than 5, most preferably greater than 10, most preferably greater than 15.
• the substrate stack can be loaded with up to 10 million pulses for debonding.
• the value of the pulses of an ablation surface can be determined from the substrate surface, the laser spot size and the number of pulses relative to the entire substrate.
• the multiple irradiation can in particular be done several times with different laser parameters. As a result, according to the invention a better
• a lower radiation load protects the components, which can be on the product substrate. These are then subject to a lower thermal load.
• a further possibility for improving the homogeneity can be achieved by a shifted origin of the laser beam by a fraction of a size parameter of the ablation surface.
• the displacement is in particular less than 10 times the size parameter of the ablation area, preferably less than 5 times the size parameter of the ablation area, more preferably less than 1 times the size parameter of the ablation area, most preferably less than 0.05 times the size parameter of the ablation area, most preferably, less than 0.01 times the size parameter of the ablation surface. If the laser beam has a round ablation surface, then the size parameter corresponds, for example, to the diameter.
• the multiple irradiation can be understood as integration or addition of the absorbed dose on the ablation surface.
• a first method according to the invention comprises determining the optimum laser parameters for optimum debonding of at least two substrates from a substrate stack.
• determining the optimum laser parameters for optimum debonding of at least two substrates from a substrate stack comprises determining the optimum laser parameters for optimum debonding of at least two substrates from a substrate stack.
• only the laser parameters of a Examined substrate In this case, only a substrate instead of a substrate stack is fixed to the substrate holder.
• two substrates are investigated without an intervening temporary boundary layer and / or an intermediate release layer. Thus, in particular, the transmittance of the substrate stack can be determined.
• Substrate stack properties the properties of the temporary boundary layer can be calculated from identical measurements.
• An optimal debond is understood to mean a separation process in which a complete separation of the substrates occurs in minimal time, without the
• a set of a i laser parameters in particular in the form of a list or a matrix, are created and stored in a computer, preferably in a software. It would be conceivable to store a laser parameter, for example the laser power in 10 steps from 10 watts to 1000 watts in a list. According to the invention ten positions are then approached with the scanner and the interface with a
• Another, second method of the invention allows in situ
• Homogeneity quantification This is the process of obtaining information about the quality of the debond during the debonding process, especially at different points in the interface between the substrates. While the laser is focused on the interface to perform the debonding, especially locally, the reflected and / or transmitted radiation is measured simultaneously. From this the quality of the Debonds is determined at the appropriate place. If the debond has not been completed, the site may be exposed again or at a later time to complete the debond. According to the invention, the quality and / or homogeneity of the debond (separation process) will not take place, in particular, after the laser application, but during the laser application.
• UV active layer (Release Layer)
• a first method according to the invention includes one or more of the following steps:
• Atmosphere is detected at the sensors.
• the self-calibration serves to record a current actual status of all process-relevant parameters including laboratory conditions such as temperature, relative humidity, suspended particle number.
• the measured values are processed and stored.
• an unbonded, stacked substrate stack and the film used for film fixation may be loaded into the device.
• glass substrates in particular transparent glass substrates stacked on one another, can be loaded into the device as a substrate stack with or without film fixing.
• a glass substrate which forms a substrate stack, can be loaded into the apparatus without film fixation and measured. Thereafter, a further, in particular identical, glass substrate with film fixing can be loaded into the device and measured.
• Absorbance or transmittance of the glass substrates of a substrate stack are determined for a reference measurement without contacting the substrates.
• the knives are processed and stored.
• the absorbance of the substrate stack can be calculated.
• the unbonded substrate stack is discharged from the device.
• the laser parameters are optionally adjusted.
• the adaptation is based on empirical values and / or calculated parameters, which are called
• Parameter sets are stored in the control in a knowledge store.
• A, in particular temporarily, bonded substrate stack is in the
• a temporarily bonded substrate stack consisting of a glass substrate with known and measured transmittance, a
• an in situ measurement for the determination of the transmittance of Temporärbondadnosiv take place, which is used for the determination, preferably for optimization, the parameters.
• the separated substrate stack is discharged.
• the knives are processed and stored.
• the laser parameters are optimized again.
• Measurement series can be carried out for the formation of the knowledge store of the variations of parameters. These include, in particular, variations in: the carrier substrate material,
• the carrier substrate pretreatment in particular plasma treatment, the carrier substrate thickness
• a dose can be determined by a series of measurements which hits the product substrate during the debonding process.
• Laser beam can be adjusted to prevent damage to the product substrate.
• the individual measurements for a dose determination of the product substrate include:
• Glass substrate preferably a carrier substrate made of glass, from which the transmittance and / or the absorbance of the carrier substrate is determined.
• the absorbance and / or transmittance of the temporary adhesion adhesive can be determined.
• the other substrates and parameters preferably remaining very similar, preferably identical, the dose which would hit the product substrate can be calculated. If the resulting dose is less than the dose damaging the product substrate, the
• optimal debond parameters can be adjusted using the knowledge store if the input variables are scattered and / or changed.
• Temporary adhesive or the aging of the Temporärbondadnosiv can be recognized and compensated with appropriately issued and returned information and / or altered characteristics.
• the determination of the transmittance of the substrate stack to be separated on the fixing film assumes that the laser radiation is more than 50%, preferably more than 75%, more preferably more than 95%, most preferably more than 99%, ideally over 99.9%, ideally over 99.99% is absorbed in the Temporondondadphasesiv.
• FIG. 1a shows a first embodiment of a device according to the invention
• FIG. 1b shows the first embodiment according to FIG. 1a in a second embodiment
• FIG. 1c shows the first embodiment according to FIG. 1a in a third embodiment
• Figure 2 shows a second embodiment of the invention
• Figure 3 is an enlarged partial view of the invention
• FIG. 1a shows a device 1 according to the invention for separating a temporarily bonded substrate stack 23 by acting on it
• the device 1 consists of a base 2, with a frame 3 and the optical system 26.
• Das Optical system 26 consists of several components, in particular optical elements.
• the base 2 and the frame 3 can be immovably connected to each other and stationary.
• the connection layer 25 is also referred to as a bonding layer 25 and is designed in particular as a temporary boundary layer.
• the optical elements are preferably housed in a housing 4.
• the device 1 has a laser 5. One generated by the laser 5
• Laser beam 16 (or a plurality of laser beams 16) is decoupled via a Brewster window 20 and coupled via optical elements, in particular mirror 7, in the optical system 26.
• optical elements in particular mirror 7, in the optical system 26.
• Deflection unit 29 symbolizes.
• the measuring and control instruments are connected to a control computer, not shown.
• Laser beam 16 at least a portion of the laser beam 1 6 deflected by a mirror 7 in a decoupled laser beam 16r and thus decoupled from the remaining in the direction of the substrate stack beam path 16 '.
• decoupled laser beam 16r is transmitted to a laser beam shape sensor 1 1 and / or a laser beam energy sensor 1 7
• the decoupled laser beam 1 6r is thus measured before the remaining, not decoupled part of the
• Laser beam 16 reaches the substrate stack 23.
• the decoupled laser beam 16r is used to determine a reference or reference values.
• the remaining part of the laser beam 16 can reach the bonding layer 25 and at least partially separate the substrate stack 23.
• the substrate surface 24o and / or the bonding layer 25 can be examined and measured in each device 1, 1 'according to the invention by a camera 6 having a viewing region 12.
• the camera 6 is in particular a
• Infrared camera S ind the substrates 24 transparent to visible light, it is preferably a camera that is sensitive in the visible wavelength range.
• the substrate holder 22 is movable in particular in the x and / or y and / or z direction.
• the movement in the z-direction may in particular serve to change the position of the depth of field and / or be used for a loading and / or unloading sequence of the device.
• the depth of field is changed by adjusting the focusing of the laser beam.
• the loading and / or unloading can in particular also with the help of charging pins, which in the
• Substrate holder are installed, done.
• the substrate stack 23 is transported in a focal plane of the laser beam 1 6 'and for the
• the substrate stack 23 is preferably mounted on a support in the
• the substrate stack 23 is fixed on a film, which is stretched over a frame. The substrate stack 23 is thereby over the product substrate with the film
• the substrate stack 23 can thereby be easily transported.
• the generally relatively thin product substrate remains after removal of the carrier substrate on the film and can be easily removed from the plant according to the invention.
• inventive device is treated.
• that should be Product substrate however, have a sufficient thickness (rigidity) to be dimensionally stable enough.
• Substrate holder in particular designed so that it can fix the product substrate sufficiently enough and stabilize after removal of the carrier substrate from the substrate stack.
• the rolling of the product substrate after debonding is prevented in particular with adapted fixations for product substrates.
• the application of the substrate stack 23 to the laser beam 1 6 ' is effected by scanning, in particular a predominant part, preferably the entire bonding layer 25, by means of raster movements.
• the raster movements are carried out in particular by means of the deflection unit 29 as a relative movement between the laser beam 16 'and the substrate stack 23.
• the position of the depth of field can be changed by a telescope 9.
• the scanning can be performed by a
• Relative movement in particular an active movement of the substrate holder 22 to the optical system 26, take place.
• the raster movement of the laser beam 16 'can contain various trajectories and / or webs described above with the aim of at least predominantly, preferably completely, impinging on the substrate stack 23, in particular the connecting layer 25, but at the same time damaging it as little as possible.
• a stationary laser beam 16 '(or stationary group of laser beams) and a stationary substrate stack is disclosed as a one-off, ie full-surface screening without movement during the application also as invented.
• the laser beam sensor 30 can not in one embodiment of the device 1, 1 'according to the invention in the plane of the Temporondondadphinsivs of
• Embodiment is not shown.
• the laser beam sensor 30 can be designed as a partial area of the substrate holder 22, as shown schematically, wherein the positioning can be either (preferably) centric or non-centric.
• sensor surface of the laser beam sensor 30 may be more than 0.001%, preferably more than 0.005%, more preferably more than 0.01%, still
• more than 1, preferably more than 2, particularly preferably more than 5 laser beam sensors 30 can be installed in the substrate holder 22, in particular distributed on the substrate surface 23o. It can the
• At least one laser beam sensor 30 may be formed as an area sensor, so that more than 50% of the substrate stack area, preferably more than 60% of the substrate stack area, more preferably more than 80% of the Substrate stacking area, most preferably more than 99% of
• Substrate stack surface during debonding, especially in situ can be measured.
• FIG. 1 b shows a detail of a device 1 according to the invention according to the embodiment of FIG. 1 a.
• the deflection unit 29 has deflected the laser beam 16 'into a further beam position.
• the laser beam 16 'strikes the laser beam sensor 30 through the substrate stack 23 in this beam position
• Laser beam energy sensor 17 and a laser beam shape sensor 1 1 as well as an integrated sensor for measuring the energy of the laser beam and the shape of the laser beam is suitable.
• this device 1 according to the invention is therefore a device 1 for transmission measurement.
• FIG. 1c shows a part of a device 1 according to the invention, as described in FIG. 1a.
• the deflection unit 29 has deflected the laser beam 16 'into a further illustrated beam position.
• the laser beam 16 'strikes the substrate holder 22 through the substrate stack 23.
• a full-surface scanning of the bonding layer 25 is possible.
• FIG. 2 shows a device according to the invention ⁇ in the reflection mode, that is to say with a reflection measurement instead of or in addition to a transmission measurement.
• the substrate surface 24o and / or the bonding layer 25 may be in each
• Inventive device 1 are examined and measured by a camera 6 with a viewing area 12.
• the camera 6 is in particular a
• Infrared camera with preference a camera that can capture both IR and visible light at the same time.
• the camera 6 is both on the transparency of the substrate stack 23rd and tuned to the laser radiation used so that the
• Stripping process can be observed by optical means.
• the substrate holder 22 is movable in particular in the x and / or y and / or z direction.
• the movement in the z-direction may in particular serve to change the position of the depth of field and / or be used for the loading and / or unloading sequence of the device.
• the substrate stack 23 is transported into a focal plane of the laser beam 16 'and clamped for the debonding process so that the substrate stack 23 assumes a position on the substrate holder 22 and does not change it.
• the raster movements are carried out in particular by means of deflection unit 29 as a relative movement between laser beam 16 and substrate stack.
• the position of the depth of field can be changed by a telescope 9.
• the relative movement, in particular the active movement of the substrate holder 22 to the optical system 26 allows a
• the position of the depth of field can be changed by a telescope 9.
• a relative movement in particular the active movement of the substrate holder 22 to the optical system 26 a
• Device 1, 1 ' possible that the device 1, 1' includes a laser beam sensor 30 for reflective measurements, but no laser beam sensor 30 for
• This device 1, 1 ' can be used when using a non-transparent product substrate.
• FIG. 3 shows an enlarged cross-sectional view of a substrate stack 23, consisting of two substrates 24 and a bonding layer 25.
• the focused laser beam 16 has a finite at the respective x-y position
• the substrate stack 23 has a slight curvature with a radius of curvature 27.
• the z-position of the depth-of-field region 28 is preferably adjustable. The adjustment is effected by at least one of the optical elements, preferably by at least one of the telescopes 9, which are located in the beam path of the laser beam 16.
• FIG. 3 shows one of the telescopes 9 by way of example as an upstream optical element.
• the depth-of-field region 28 is in particular thinner in the z-direction than the substrate stack 23.
• the depth of field is preferably lower than the layer thickness of the adhesive, with particular preference ⁇ 0.5 times the thickness of the adhesive.
• PSD position sensitive device

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• 2017
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