EP3551788A1 - Verfahren zur integration von zweidimensionalen materialien auf einem nanostrukturierten substrat, suspendierte dünnschicht von zweidimensionalen materialien und verwendungen davon - Google Patents
Verfahren zur integration von zweidimensionalen materialien auf einem nanostrukturierten substrat, suspendierte dünnschicht von zweidimensionalen materialien und verwendungen davonInfo
- Publication number
- EP3551788A1 EP3551788A1 EP17832986.8A EP17832986A EP3551788A1 EP 3551788 A1 EP3551788 A1 EP 3551788A1 EP 17832986 A EP17832986 A EP 17832986A EP 3551788 A1 EP3551788 A1 EP 3551788A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- dimensional materials
- materials
- substrate
- dimensional
- integrating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 title claims abstract description 147
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 238000004299 exfoliation Methods 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 230000005693 optoelectronics Effects 0.000 claims abstract description 6
- 238000006555 catalytic reaction Methods 0.000 claims abstract description 4
- 230000008021 deposition Effects 0.000 claims abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 77
- 239000002070 nanowire Substances 0.000 claims description 46
- 239000011787 zinc oxide Substances 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 18
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 16
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 16
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052961 molybdenite Inorganic materials 0.000 claims description 14
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 14
- 238000012546 transfer Methods 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 229910003090 WSe2 Inorganic materials 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 230000010354 integration Effects 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000000859 sublimation Methods 0.000 claims description 4
- 230000008022 sublimation Effects 0.000 claims description 4
- 238000013459 approach Methods 0.000 claims description 3
- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 claims description 3
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 23
- 101100069231 Caenorhabditis elegans gkow-1 gene Proteins 0.000 description 13
- 239000000243 solution Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 238000000103 photoluminescence spectrum Methods 0.000 description 3
- XCUPBHGRVHYPQC-UHFFFAOYSA-N sulfanylidenetungsten Chemical compound [W]=S XCUPBHGRVHYPQC-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005274 electronic transitions Effects 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PTISTKLWEJDJID-UHFFFAOYSA-N sulfanylidenemolybdenum Chemical compound [Mo]=S PTISTKLWEJDJID-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical group 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
Definitions
- the invention relates to the field of integration of 2D materials. More particularly, the invention relates to a method for integrating 2D materials onto a nanostructured substrate to obtain a monolayer of 2D materials entirely suspended. The invention also relates to fully suspended films and the use of said suspended films in different technologies.
- a two-dimensional material sometimes called a monolayer material or 2D material, is a material consisting of a single (or some) layer of atoms or molecules. Due to their unusual characteristics and for potential use in applications such as semiconductors, photovoltaics, ...
- the 2D materials of atomic thickness have unique properties (absorption, electrical conduction and thermal) and allow to consider a set of ultrafine devices, ultralight flexible etc .. however the thickness of these materials give them a very large sensitivity to the environment.
- the simple fact of depositing these materials on a substrate modifies their intrinsic properties (ex: exchange of charges). This is related to the contact surface that makes each atom of the 2D material in contact with the substrate.
- the new two-dimensional materials dichalcogenides of transition metals are the subject of important studies. The spectacular progress in controlling the electronic properties of graphene has indeed powerfully stimulated the search for new two-dimensional (2D) materials.
- the object of the present invention is to obtain a monolayer of 2D material completely suspended, without stress, that is to say the layer does not interact with the substrate.
- the present invention provides a solution to this problem by minimizing the contact areas of the 2D materials by transferring them to a nanostructured substrate.
- the present invention relates to a method of integrating two-dimensional materials on a nanostructured substrate characterized in that it comprises the following steps:
- the manufacture of two-dimensional materials by the vapor deposition method consists of:
- the transfer of said PMMA-coated materials obtained in a previous step onto a nanostructured substrate further comprises the following steps:
- the two-dimensional materials are manufactured by the exfoliation method in an inert environment and the transfer of said two-dimensional materials obtained by exfoliation on a synthesized nanostructured substrate consists of a single step of depositing said two-dimensional materials. on said synthesized nanostructured substrate.
- the nanostructured substrate is ZnO nanowires, zinc oxide, said nanostructured substrate is synthesized by a liquid phase chemical deposition method, CBD, on an SiO 2 substrate or by all other growth technologies of ZnO nanowires.
- the synthesized ZnO nanowires are disordered and of variable sizes so as to minimize the contact area with the two-dimensional materials obtained.
- the ZnO nanowires have a diameter of less than 100 nm.
- the two-dimensional materials are either molybdenum sulphide MoS 2, or tungsten sulphide WS 2 or diselenide Tungsten WSe 2.
- two-dimensional materials are any two-dimensional rigid materials.
- the invention also relates to a suspended thin film obtained by the transfer of the 2D materials onto a ZnO nanowire substrate according to the above method.
- ZnO nanowires are disordered and of varying sizes.
- the thin film suspended obtained by the above method is characterized in that the two-dimensional materials are either molybdenum sulphide MoS2, or tungsten sulphide WS2 or diselenide tungsten WSe2.
- said two-dimensional materials are Rigid and are obtained by chemical vapor deposition on SiO 2 substrate or by exfoliation deposit on an SiO 2 substrate.
- the invention also relates to the use of thin films suspended from 2D materials in the fields of electronics and / or optoelectronics and / or thermal and / or photonic.
- the invention also relates to the use of thin films suspended from 2D materials in catalysis domains and / or in ultrasensitive surfaces.
- FIG. 1 illustrates the concept and manufacture of 2D materials suspended according to the method object of the present invention
- FIG. 2 illustrates the exalted optical properties and associated band structures
- FIG. 3 illustrates the image obtained by SEM of the suspended integrated layers
- FIGS 4A and 4B illustrate the concept of active substrate.
- identical or similar elements are identified by identical reference signs throughout the figures.
- the two-dimensional materials (2D) are atomically thin semiconductors made of transition metals m- (Mo, W, Sn, etc.) covalently bound to chalcogen X- (S, Se, Te). .
- the optical and crystalline properties of these 2D materials integrated on flat substrates are still not satisfactory for an application
- the simple fact of depositing these materials on a substrate modifies their intrinsic properties (ex: exchange of loads). This is related to the contact surface that makes each atom of the 2D material in contact with the substrate.
- the present invention aims to circumvent this problem of modifying intrinsic characteristics of said 2D materials when they are transferred to a substrate, by proposing to minimize the contact surface using nanostructured substrates (carpet fakir).
- a method for integrating 2D materials onto a nanostuctured substrate is proposed.
- the first step of the process involves the development or growth of 2D materials by chemical vapor deposition on SiO 2 / Si substrates.
- the 2D materials can also be obtained by simple exfoliation and in this case simply deposited on a SiO 2 / Si substrate.
- the 2D materials are either molybdenum sulfide, MoS2, or tungsten sulfide, WS2 or tungsten diselenide, WSe2.
- the next step is to deposit a layer of PMMA on said two-dimensional raw materials in the previous step.
- the PMMA layer is used to support the single layer during chemical etching of SiO2.
- the SiO 2 substrate is etched in a hydrofluoric acid (HF) solution, diluted.
- the next step consists in transferring said 2D materials, covered with PMMA, onto nanowires of ZnO synthesized on a substrate (Si, SiO2, etc.).
- an acetone solution was used.
- the 2D materials were dried at 80 ° C to remove the residual layer of PMMA.
- the sublimation technique can be used to avoid the mechanical stresses associated with drying.
- ZnO nanowires on the silicon substrate was carried out by adopting a chemical deposition technique in liquid phase, CBD.
- 0.025 M zinc acetate was dissolved in 250 ml of water; Then 0.3 ml of ammonium hydroxide was added to the solution and stirred at room temperature. The synthesis was carried out in the absence of catalysts or metal additives. The mixture was heated to 87 ° C.
- the sample consisting of a ZnO layer previously deposited on a silicon substrate was immersed in the solution for 30 min. Then the sample was washed with water and air dried for 1 hour.
- Figure 1 shows the three-dimensional schemas of the process of simplified transfer of two-dimensional materials on ZnO nanowires.
- Fig. 1a, 1b and 1c illustrate MoS2, WS2 and WSe2 on ZnO nanowires respectively.
- the two-dimensional materials were transferred to the ZnO nanowires by a method of vapor transfer.
- Fig.ld, fig. 1 (e) and fig. 1 f are the 3D enlarged diagrams of materials, MoS2, WS2 and WSe2 on the ZnO nanowires respectively.
- Fig.1 j shows the contact between 2D materials and nanowires. Note that the contact occurs only at the edge of the ZnO nanowires.
- Fig 1k shows the spectrum of the photoluminescence intensity of said 2D materials on ZnO nanowires at room temperature.
- Raman analysis shows that the layer of 2D material is free of stress and is fully relaxed. This is due to the limited number of contact points, which is partly explained by the fact that the nanowires are not all exactly the same length and slightly disoriented with respect to the vertical axis ( Figure 1).
- the goal is to integrate the 2D material thin layer without changing its electronic structure.
- the emission factor observed in emission is explained by the direct nature of the electronic transition.
- the same 2D material deposited on a SiO 2 plane substrate becomes optically inefficient and this is explained by the indirect nature of the electronic transitions. We are talking here about the emission but the absorption is also modified.
- the final material integrated on the ZnO nanowire substrate has preserved optical properties as shown in FIG. 2.
- Figure 2 shows the optical properties and structures of the associated bands.
- the photoluminescence intensities were measured at room temperature.
- the position of the PL signal (photoluminescence) is closely related to the nature of the forbidden band, ie, it reveals a direct or indirect transition.
- the PL spectra of MoS2, WS2 and WSe2 on the ZnO nanowires are shown in Figures 2a, 2b and 2c, respectively, together with the PL spectra of the same 2D materials deposited on them.
- SiO2 substrates Said PL spectra of the 2D materials on the ZnO nanowires are represented by the gray color and on the SiO 2 substrate it is represented by the black color.
- FIG. 2d, 2e and 2f The energy spectra of the MoS2, WS2 and WSe2 materials on the ZnO nanowires and SiO2 substrate are shown in Figures 2d, 2e and 2f.
- Figures 2g, 2h and 2i show the energy band diagrams showing the optical transitions of the 2D materials on the nanowires and on the SiO2 substrate. Solid and dotted lines indicate 2D material on both nanowires and SiO2, respectively.
- the maximum of the valence band for MoS2 and WS2 on the Nanowires is the minimum of the conduction band, which results in a higher PL intensity at an increase in the bandwidth when the layer is relaxed, as shown in FIG. 2g and 2h.
- PL intensities of 2D materials can be affected by several factors such as doping and crystalline quality.
- the influence of crystalline quality can be excluded because we have deposited identical 2D materials on SiO2 substrate and on ZnO nanowires.
- the work function of ZnO is greater than the electronic affinity of all 2D materials. Therefore, the photoexcited electrons of 2D materials could be transferred to ZnO at the point of contact.
- the PL intensities of 2D materials such as MoS2 and WS2 are not more than 3 times increased charge transfer. On the other hand, the intensity PL of WSe2 is decreased by photoexcited electron transfer.
- FIGS. 4A and 4B illustrate the doping type being connected to the difference in energy level between the 2D material and that of the nanowires.
- FIG. 4A illustrates the doping n: electron injection of the nanowire to the 2D material.
- FIG. 4B illustrates the p-doping: electron transfer from the 2D material to the nanowire.
- the solution proposed by the present invention is simply limited by the size of the 2D material layer. Indeed, the ZnO nanowire substrates can be obtained on centimeter or metric surfaces (chemical growth in solution).
- ZnO zinc oxide
- the invention thus relates to a thin film suspended obtained by the transfer of 2D materials on Zno nanowires.
- the suspended thin film is obtained by the method object of the present invention described above.
- the 2D materials used for the transfer on the ZnO nanowires are of the molybdenum sulfide type, MoS2, or tungsten sulphide, WS2 or tungsten diselenide, WSe2.
- Said 2D materials are obtained by chemical vapor deposition on an SiO 2 substrate or simply exfoliated.
- Another problem that can be solved by the present invention is the control of the contact surface so as to locally be able to inject carriers (contact engineering). This is particularly interesting in that we have shown that self-supporting layers can be obtained.
- the only technique proposed today is to deposit the 2D material on a micro-perforated substrate obtained by lithography. In this case, suspended and unsprung areas are obtained. We can not speak of fully suspended layers.
- the invention furthermore relates to the use of thin films suspended from 2D materials in electronic and / or optoelectronic and / or thermal and / or photonic domains.
- the invention also relates to the use of thin films suspended from 2D materials in catalysis fields and / or in ultrasensitive surfaces.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1670741A FR3060023A1 (fr) | 2016-12-09 | 2016-12-09 | Procede d'integration de materiaux 2d sur un substrat nanostructure, filme mince suspendu de materiaux 2d et utilisations associes. |
| PCT/IB2017/057764 WO2018116048A1 (fr) | 2016-12-09 | 2017-12-09 | Procédé d'intégration de matériaux 2d sur un substrat nanostructure, film mince suspendu de matériaux 2d et utilisations associes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP3551788A1 true EP3551788A1 (de) | 2019-10-16 |
Family
ID=58992949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP17832986.8A Withdrawn EP3551788A1 (de) | 2016-12-09 | 2017-12-09 | Verfahren zur integration von zweidimensionalen materialien auf einem nanostrukturierten substrat, suspendierte dünnschicht von zweidimensionalen materialien und verwendungen davon |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP3551788A1 (de) |
| FR (1) | FR3060023A1 (de) |
| WO (1) | WO2018116048A1 (de) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473490A (zh) * | 2018-11-08 | 2019-03-15 | 天津理工大学 | 一种垂直多结结构二硫化钼太阳能电池及其制备方法 |
| CN110203879B (zh) * | 2019-05-10 | 2021-12-31 | 中国科学院上海微系统与信息技术研究所 | 一种硅纳米线的制备方法 |
| CN110344022B (zh) * | 2019-07-19 | 2021-07-30 | 河南师范大学 | p型戴维南星形MoS2单层二维材料、制备方法及电子器件 |
| CN110564417B (zh) * | 2019-09-04 | 2022-06-07 | 暨南大学 | 悬浮二维材料光致发光的光电调控器及制备、调控方法 |
| CN111312593B (zh) * | 2019-11-15 | 2023-08-22 | 杭州电子科技大学 | 一种二维过渡金属硫族化合物明、暗激子的调控方法 |
| CN112608736B (zh) * | 2020-12-30 | 2023-07-25 | 东北师范大学 | 一种提升二维碘化铅光稳定性和荧光强度的方法 |
| CN113200523B (zh) * | 2021-03-25 | 2022-11-22 | 华南师范大学 | 一种大面积层状二维材料的剥离及其转移方法 |
| CN113206005B (zh) * | 2021-04-21 | 2024-12-24 | 武汉大学 | 二维材料拉应变工程的激光制造方法 |
| CN113264557A (zh) * | 2021-06-01 | 2021-08-17 | 南开大学 | 一种利用流体边界层效应自组装同质/异质结纳米膜的方法 |
| CN113666418A (zh) * | 2021-06-09 | 2021-11-19 | 湖南大学 | 一种二维原子晶体多层转角ws2纳米材料及其制备方法 |
| CN114018297A (zh) * | 2021-11-04 | 2022-02-08 | 电子科技大学 | 一种基于磁场调控二维铁磁CrI3荧光手性的多波长磁编码器 |
| CN113851371A (zh) * | 2021-11-05 | 2021-12-28 | 厦门大学 | 一种二维材料转移至孔洞衬底上的方法 |
| CN114265258A (zh) * | 2021-12-06 | 2022-04-01 | 中国科学院上海光学精密机械研究所 | 一种调控二维材料光学非线性效应的方法 |
| CN114657534B (zh) * | 2022-02-18 | 2023-06-16 | 华南理工大学 | 一种基于MoS2上的InN纳米柱及其制备方法与应用 |
| CN115595551A (zh) * | 2022-09-20 | 2023-01-13 | 西北工业大学（Cn） | 一种高保真度2D TMDs的转移方法 |
| CN116247495A (zh) * | 2023-03-13 | 2023-06-09 | 常州工学院 | 一种基于非平面衬底上的二维材料的转移方法及应用 |
| CN116732141B (zh) * | 2023-07-10 | 2024-04-02 | 海南大学 | 一种快速检测生物dna特异性的方法 |
| CN119480759B (zh) * | 2024-11-12 | 2026-03-10 | 电子科技大学 | 一种基于范德华辅助层的二维异质结洁净转移技术 |
-
2016
- 2016-12-09 FR FR1670741A patent/FR3060023A1/fr not_active Withdrawn
-
2017
- 2017-12-09 WO PCT/IB2017/057764 patent/WO2018116048A1/fr not_active Ceased
- 2017-12-09 EP EP17832986.8A patent/EP3551788A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018116048A1 (fr) | 2018-06-28 |
| FR3060023A1 (fr) | 2018-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3551788A1 (de) | Verfahren zur integration von zweidimensionalen materialien auf einem nanostrukturierten substrat, suspendierte dünnschicht von zweidimensionalen materialien und verwendungen davon | |
| Erkılıç et al. | Vapor phase selective growth of two-dimensional perovskite/WS2 heterostructures for optoelectronic applications | |
| Yang et al. | Ultra‐broadband flexible photodetector based on topological crystalline insulator SnTe with high responsivity | |
| An et al. | Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials | |
| Sheng et al. | Hydrogen addition for centimeter-sized monolayer tungsten disulfide continuous films by ambient pressure chemical vapor deposition | |
| Gao et al. | Large-area nanosphere self-assembly by a micro-propulsive injection method for high throughput periodic surface nanotexturing | |
| Seo et al. | Low dimensional freestanding semiconductors for flexible optoelectronics: materials, synthesis, process, and applications | |
| Petoukhoff et al. | Ultrafast charge transfer and enhanced absorption in MoS2–organic van der Waals heterojunctions using plasmonic metasurfaces | |
| Yan et al. | Nanowire photonics | |
| Zhang et al. | Self-catalyzed ternary core–shell GaAsP nanowire arrays grown on patterned Si substrates by molecular beam epitaxy | |
| Chen et al. | Hydrogen-assisted growth of large-area continuous films of MoS2 on monolayer graphene | |
| Chen et al. | Rational design of nanowire solar cells: from single nanowire to nanowire arrays | |
| Cong et al. | Multilayer graphene–GeSn quantum well heterostructure SWIR light source | |
| Rahman et al. | Nano-engineering and nano-manufacturing in 2D materials: marvels of nanotechnology | |
| Shi et al. | Finely interpenetrating bulk heterojunction structure for lead sulfide colloidal quantum dot solar cells by convective assembly | |
| EP2769405A1 (de) | Verfahren zur verstärkung der dicke von kolloidalen nanosheets und materialien aus diesen nanosheets | |
| Nalamati et al. | Hybrid GaAsSb/GaAs heterostructure core–shell nanowire/graphene and photodetector applications | |
| Nalamati et al. | A study of GaAs1–x Sb x axial nanowires grown on monolayer graphene by Ga-assisted molecular beam epitaxy for flexible near-infrared photodetectors | |
| Terada et al. | Orange–red Si quantum dot LEDs from recycled rice husks | |
| Hwang et al. | Flexible vertical p–n diode photodetectors with thin N-type MoSe2 films solution-processed on water surfaces | |
| Skinner et al. | Electrospinning for nano-to mesoscale photonic structures | |
| Zhao et al. | Solvent-free preparation of closely packed MoS2 nanoscrolls for improved photosensitivity | |
| EP2769404A1 (de) | Verfahren zum dickenwachstum von kolloidalen nanosheets und materialien aus diesem nanosheets | |
| Abrand et al. | Localized self-assembly of InAs nanowire arrays on reusable Si substrates for substrate-free optoelectronics | |
| Ghosh et al. | Heavy mediator at quantum dot/graphene heterojunction for efficient charge carrier transfer: Alternative approach for high-performance optoelectronic devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| 17P | Request for examination filed |
Effective date: 20190709 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
| AX | Request for extension of the european patent |
Extension state: BA ME |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN |
|
| DAV | Request for validation of the european patent (deleted) | ||
| DAX | Request for extension of the european patent (deleted) | ||
| 18W | Application withdrawn |
Effective date: 20200217 |