EP3535779A1 - Module semi-conducteur muni d'un premier et d'un second élément de connexion pour la connexion d'une puce semi-conductrice et procédé de fabrication - Google Patents

Module semi-conducteur muni d'un premier et d'un second élément de connexion pour la connexion d'une puce semi-conductrice et procédé de fabrication

Info

Publication number
EP3535779A1
EP3535779A1 EP17822151.1A EP17822151A EP3535779A1 EP 3535779 A1 EP3535779 A1 EP 3535779A1 EP 17822151 A EP17822151 A EP 17822151A EP 3535779 A1 EP3535779 A1 EP 3535779A1
Authority
EP
European Patent Office
Prior art keywords
semiconductor chip
connecting element
semiconductor
semiconductor module
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP17822151.1A
Other languages
German (de)
English (en)
Inventor
Georg Zaiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP3535779A1 publication Critical patent/EP3535779A1/fr
Withdrawn legal-status Critical Current

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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Definitions

  • Semiconductor module having a first and a second connecting element for connecting a semiconductor chip and Her ⁇ approval procedure
  • the invention relates to a semiconductor module with a sub ⁇ strat, with a semiconductor chip which is rated as arrival on the substrate, and a first connecting member for electrically connecting the semiconductor chips to a conductor track and / or a further component of the semiconductor module, wherein the first connecting element at least partially flat against the semiconductor chip and the substrate and the conductor track and / or the further component.
  • the present invention relates to a method for manufacturing a semiconductor module.
  • semiconductor modules which can be for example part of an electronic or Leis ⁇ consumer electronics.
  • Such semiconductor modules comprise at least one semiconductor chip, which is arranged on a substrate.
  • This semiconductor chip is electrically connected to other components of the semiconductor module. Examples game, the semiconductor chip may be with one or more conductive traces disposed on the substrate, ver ⁇ prevented. Further, the semiconductor chip may be electrically connected to other components or semiconductor chips in the Halbleitermo ⁇ duls. Different methods for electrical contacting of the semiconductor chip are known from the prior art.
  • a frequently used form for contacting semiconductor chips are bonding wires. But here is the point of contact of the bonding wire on the semiconductor chip as a vulnerability be ⁇ known. This is due to the fact that the contact area is relatively small.
  • bond wires bring the disadvantage that electromagnetic interference can occur in ⁇ nerrenz the semiconductor module thus the electromagnetic compatibility (EMC) is not sufficiently guaranteed.
  • EMC electromagnetic compatibility
  • the temperature can be increased by the stress in bond ⁇ wire. This can cause a thermal expansion and thus a mechanical stress. This can then lead to damage.
  • the contacting of semiconductor chips with a band which can also be referred to as a ribbon, is known from the prior art. Since the individual bands have a larger cross-section than bonding wires, a smaller number of bands is needed for the realization of the same conductor cross-section compared to bonding wires.
  • the contacting of the bands on the surface of the semicon ⁇ terchips but requires a larger area. Thus, it is no longer possible, a better current carrying capacity to reali ⁇ Sieren. The irradiation of electromagnetic interference is still not excluded and it has been found that the semiconductor modules tend to oscillate in certain operating conditions.
  • the use of flexible plates for contacting semiconductor chips is known from the prior art.
  • the semiconductor chip is contacted over a large area by a prefabricated connecting element, which may be formed, for example, as a flexible plate.
  • a prefabricated connecting element which may be formed, for example, as a flexible plate.
  • the effective cross section of the connecting element is clotting ⁇ ger than with bond wires.
  • improvement of the effective cross section is possible only by increasing the layer thickness of the connecting element or the flexible plate.
  • the connecting member is thin and flexible keptstal ⁇ tet, then the elasticity and the extension of the Ver ⁇ binding member well and the connection member may be together to-deform elastically with the semiconductor chip, so that no permanent deformation of the connection element is caused.
  • the current carrying capacity of the connecting element is not sufficient because of the small layer thickness. It can also be the case that the temperature increase increases within the connecting element, so that the performance of the semiconductor chip can not be exploited.
  • a semiconductor module according to the invention comprises a substrate. Furthermore, the semiconductor module comprises a semiconductor chip, which is arranged on the substrate. In addition, the semiconductor module comprises a first connection element for electrically connecting the semiconductor chip to a conductor track and / or another component of the semiconductor module, wherein the first connection element at least partially rests flat against the semiconductor chip and the substrate and the conductor track and / or the further component. Finally, the semiconductor module comprises a second connecting element for electrically connecting the semiconductor chip to the conductor track and / or the further component, wherein the second connecting element is designed as a wire or as a band.
  • the semiconductor module can be used for example for a power ⁇ electronics.
  • the semiconductor module includes the substrate, which may be formed of an electrically insulating material.
  • the substrate is preferably composed of a made of ramik.
  • the semiconductor chip is arranged.
  • the semiconductor chip which can also be referred to as the, is in particular an unhoused semiconductor ⁇ component.
  • the semiconductor chip may be formed, for example, as a diode, as transistors or the like.
  • the semiconductor module can have traces wel ⁇ surface are arranged on the substrate or which are applied to the sub ⁇ strat.
  • the semiconductor module can have further components or electronic components.
  • the further components may be further semiconductor chips.
  • the semiconductor module comprises the first electrical connection element.
  • This first elekt ⁇ generic connecting element serves to connect the semiconductor chip to a conductor track and / or with a further component electrically.
  • the first dacasele ⁇ element is formed so that it lies flat in a region of the semiconductor chips and also at a portion of the substrate at ⁇ .
  • the first connecting member can gen surface investor to ei ⁇ nem region of the conductor track or of the other component.
  • the first connecting element may in particular be formed as a lami ⁇ -defined structure, or a flexible disk.
  • the semiconductor module to have a second connection element in addition to the first connection element .
  • This second connection element is used to elekt ⁇ step connecting the semiconductor chip to the conductor path and / or the further component.
  • the second connecting element is designed as a wire or as a band. It can also be provided that the second connecting element meh ⁇ rere wires and / or bands.
  • the second connecting element may be formed as a bonding wire.
  • the second connecting element may be formed as a band (ribbon). Ment by the second kausele- the current carrying capacity of the first kausele ⁇ ment is significantly improved.
  • the first connection element ⁇ serves in particular to provide a low-inductance commutation path, whereby the switching losses in the Semiconductor chip can be minimized.
  • the first connecting element brings the advantage of low electromagnetic interference during the switching operations with it.
  • the second connection element the current carrying capacity of the electrical connection between the semiconductor chip and the conductor track and / or the further component is increased.
  • the second connection element is on a
  • the first connecting member comprises an electrically insulating film and one on the foil placed on ⁇ metal layer.
  • the first Ver ⁇ connecting element can be provided using the so-called SiPLIT® method (SiPLIT - Siemens Planar Interconnect Technology).
  • SiPLIT® method SiPLIT - Siemens Planar Interconnect Technology
  • first of all the electrically insulating film can be applied to the semiconductor chip, the substrate as well as the conductor track and / or the further component in such a way that it bears against these components. Subsequently, the film can be structured accordingly. The metal layer can then be applied to this film.
  • the first connecting element is provided with ⁇ help of so-called Skin ® technology. In this case, the metal layer sintering process on a Fo- be applied.
  • known methods for producing the first connecting element can be used.
  • the first connecting element can be flexible.
  • the first connection element can be provided by applying a flexible, electrically conductive plate to the components of the semiconductor module to be connected.
  • the contact surface can be significantly increased in the electrical connection.
  • expansion can be reliably compensated depending on temperature fluctuations.
  • the second connecting element has a predetermined curvature at least in regions.
  • the wire or the band can be partially curved.
  • This configuration of the second connecting element can be achieved, that exhibits this ei ⁇ ne certain elasticity.
  • the semiconductor module has at least one insulation element, which is arranged between the semiconductor chip and the first connection element.
  • This insulation element is preferably made of a elekt ⁇ driven insulating material.
  • the insulating element may be arranged at the edge regions of the semiconductor chip. At the edge regions of the semiconductor chip are corresponding structures of the semiconductor chip, which are responsible for the blocking capability. By the insulating element can be prevented that the ⁇ se structures are electrically connected. Thus, a reliable edge insulation can be provided by means of the insulation element.
  • the semiconductor module has a bottom plate which is deposited on a semiconductor chip. facing side of the substrate is connected to the substrate.
  • the bottom plate may be formed of a metal.
  • the bottom plate may also be formed of a material comprising silicon carbide and / or aluminum. With the help of the bottom plate, the heat generated during operation of the Halbleitermo ⁇ module or the semiconductor chip can be reliably dissipated.
  • the semiconductor module has control circuits. Only the first connecting member for electrically Ver ⁇ bond can then be used in these control circuits. These control circuits usually have a lower current load. Thus, electromagnetic interference or interference are excluded or minimized.
  • the semiconductor module can be used in power electronics or other electronic components. It can also be provided that the power electronics or the electronic component comprises a plurality of semiconductor modules.
  • the semiconductor chip can be designed, in particular, as a transistor, for example as a MOSFET or as an IGBT.
  • the semiconductor chip can also be designed as a power semiconductor component.
  • An inventive method is used to produce a semiconductor module.
  • a substrate is provided.
  • a semiconductor chip is arranged on the substrate.
  • a first connecting member for elec- step connecting the semiconductor chip is provided with a conductor track and / or a further component of the semiconductor module of the ⁇ art, that the first connecting element has at ⁇ least partially flat against the semiconductor chip and the substrate and the conductor track and / or abuts another component.
  • a second connecting element for electrically connecting the semiconductor chip to the conductor track and / or the further component is provided, where ⁇ the second connecting element as a wire or as a band is trained.
  • the first connecting member is at least partially applied to the semiconducting ⁇ terchip and the substrate and to the conductor track and / or the further component and then the second connection element is at least partially applied to the first connecting element.
  • the first connecting element can be formed in comparison to known first connecting elements or flexible plates with a smaller layer thickness. This simplifies the manufacturing process.
  • the first connecting element as compared with known elements Ltd., a reliable connection between the first connection element and the semiconductor chip can be guaranteed even with different thermal expansion coefficients. Thus, overall, a robust and reliable connection can be provided.
  • a metal layer is provided for providing the first connecting element
  • the first dacarsele ⁇ ment may be formed as lamented structure or as a flexible plate ⁇ .
  • the first connection element may comprise the electrically insulating film on which the metal layer is applied.
  • the metal layer may be made of copper, aluminum, gold or the like, for example.
  • the first connection element can be produced in a simple and reliable manner.
  • FIG. 2 shows a semiconductor module according to the prior art in a further embodiment
  • FIG. 3 shows a semiconductor module according to an embodiment of the present invention.
  • the semiconductor module 1 shows a semiconductor module 1 according to the prior art in a first embodiment.
  • the semiconductor module 1 is shown in a sectional side view.
  • the semi ⁇ conductor module 1 comprises a substrate 2 which is formed of an electrically insulating material.
  • the substrate 2 may be formed of a ceramic.
  • the semiconductor module 1 comprises a bottom plate 3, which is connected to an underside 4 of the substrate 2.
  • the bottom plate 3 may be formed of a metal.
  • the semiconductor chip 6 can also be referred to as the die.
  • located on the upper side 5 of the substrate 2 is a conductor 7.
  • the semiconductor chip 6 is electrically connected to the conductor by means of a bonding wire 8.
  • the bonding wire 8 is arranged on an upper side 9 of the semiconductor chip 6.
  • the semiconductor chip 6 may also be electrically connected on its underside with a conductive layer. Via this conductive layer, the semiconductor chip 6 can be connected to a further component or drive this.
  • FIG. 2 shows a semiconductor module 1 according to the prior art in a further embodiment.
  • This flexible connection element 10 lies flat on areas of the semiconductor chip 6, the substrate 2 and the conductor track 7.
  • the connecting element 10 can be provided, for example, by applying a film to the conductor track 7, the substrate 2 and the semiconductor chip 6. Subsequently, this film can be structured accordingly. On the structured film then a metal layer can be applied. It may be also provided for hen, which is applied to the conductor track ⁇ 7, the substrate 2 and the semiconductor chip 6 that the connecting member 10 as a flexible, elekt ⁇ driven conductive plate formed.
  • insulation elements 11 are provided, which are arranged between the semiconductor chip 6 and the connecting element 10. These insulation elements 11 serve for edge isolation.
  • the semiconductor module comprises a first connecting element 12, which is formed on the type of kausele ⁇ ment 11 which is shown in FIG. 2 Since ⁇ in, the first connecting element 12 in comparison to the connecting element 11 has a smaller layer thickness.
  • the semiconductor module 1 a second connecting element 13 which is presently formed as a bonding wire 8 from ⁇ . It can also be provided that the second connecting element 13 is formed as a band. In this case, the second connecting element is applied to an upper side 14 of the first connecting element 12.
  • the second connection element 13 and the bonding ⁇ wire 8 illustrates a parallel current path above the flexible plate or the first connecting member 12th
  • bil ⁇ det the first connecting member 12 includes a low-inductance commutation path, which ensures a smooth commutation in the semiconductor chip 6
  • the second connection ⁇ element 13 and the bonding wire 6 the current carrying capacity can be increased.
  • This connection can also be used to connect the semiconductor chip 6 to further components of the semiconductor module 1.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

L'invention concerne un module semi-conducteur (1) comportant un substrat (2), une puce semi-conductrice (6) qui est agencée sur le substrat (2), et un premier élément de connexion (12) pour la connexion électrique de la puce semi-conductrice (6) à un tracé conducteur (7) et/ou à un autre composant du module semi-conducteur (1), le premier élément de connexion (12) portant au moins sur une partie à plat sur la puce semi-conductrice (6) et le substrat (2) ainsi que sur le tracé conducteur (7) et/ou l'autre composant. Le module semi-conducteur (1) présente un second élément de connexion (13) pour la connexion électrique de la puce semi-conductrice (6) au tracé conducteur (7) et/ou à l'autre composant, le second élément de connexion (13) étant réalisé sous la forme d'un fil ou d'une bande.
EP17822151.1A 2016-12-28 2017-11-28 Module semi-conducteur muni d'un premier et d'un second élément de connexion pour la connexion d'une puce semi-conductrice et procédé de fabrication Withdrawn EP3535779A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16207050.2A EP3343600A1 (fr) 2016-12-28 2016-12-28 Module à semi-conducteurs comprenant un premier et un second élément de liaison pour relier une puce semi-conductrice et procédé de production
PCT/EP2017/080640 WO2018121949A1 (fr) 2016-12-28 2017-11-28 Module semi-conducteur muni d'un premier et d'un second élément de connexion pour la connexion d'une puce semi-conductrice et procédé de fabrication

Publications (1)

Publication Number Publication Date
EP3535779A1 true EP3535779A1 (fr) 2019-09-11

Family

ID=57749749

Family Applications (2)

Application Number Title Priority Date Filing Date
EP16207050.2A Withdrawn EP3343600A1 (fr) 2016-12-28 2016-12-28 Module à semi-conducteurs comprenant un premier et un second élément de liaison pour relier une puce semi-conductrice et procédé de production
EP17822151.1A Withdrawn EP3535779A1 (fr) 2016-12-28 2017-11-28 Module semi-conducteur muni d'un premier et d'un second élément de connexion pour la connexion d'une puce semi-conductrice et procédé de fabrication

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP16207050.2A Withdrawn EP3343600A1 (fr) 2016-12-28 2016-12-28 Module à semi-conducteurs comprenant un premier et un second élément de liaison pour relier une puce semi-conductrice et procédé de production

Country Status (5)

Country Link
US (1) US11837571B2 (fr)
EP (2) EP3343600A1 (fr)
JP (1) JP7026688B2 (fr)
CN (1) CN110168709B (fr)
WO (1) WO2018121949A1 (fr)

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Also Published As

Publication number Publication date
JP2020503688A (ja) 2020-01-30
CN110168709B (zh) 2023-10-20
JP7026688B2 (ja) 2022-02-28
CN110168709A (zh) 2019-08-23
US11837571B2 (en) 2023-12-05
WO2018121949A1 (fr) 2018-07-05
EP3343600A1 (fr) 2018-07-04
US20190348390A1 (en) 2019-11-14

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