EP3499550A4 - Dispositif vdmos et son procédé de fabrication - Google Patents
Dispositif vdmos et son procédé de fabrication Download PDFInfo
- Publication number
- EP3499550A4 EP3499550A4 EP17845167.0A EP17845167A EP3499550A4 EP 3499550 A4 EP3499550 A4 EP 3499550A4 EP 17845167 A EP17845167 A EP 17845167A EP 3499550 A4 EP3499550 A4 EP 3499550A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- manufacturing
- method therefor
- vdmos device
- vdmos
- therefor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610798447.7A CN107785273B (zh) | 2016-08-31 | 2016-08-31 | 半导体器件及其制造方法 |
PCT/CN2017/096595 WO2018040865A1 (fr) | 2016-08-31 | 2017-08-09 | Dispositif vdmos et son procédé de fabrication |
Publications (3)
Publication Number | Publication Date |
---|---|
EP3499550A1 EP3499550A1 (fr) | 2019-06-19 |
EP3499550A4 true EP3499550A4 (fr) | 2020-04-01 |
EP3499550B1 EP3499550B1 (fr) | 2021-09-29 |
Family
ID=61301330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP17845167.0A Active EP3499550B1 (fr) | 2016-08-31 | 2017-08-09 | Dispositif vdmos et son procédé de fabrication |
Country Status (5)
Country | Link |
---|---|
US (2) | US10868145B2 (fr) |
EP (1) | EP3499550B1 (fr) |
JP (1) | JP6761900B2 (fr) |
CN (1) | CN107785273B (fr) |
WO (1) | WO2018040865A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109461767B (zh) * | 2018-10-25 | 2022-03-29 | 深圳市金鑫城纸品有限公司 | 一种超结结构的制作方法 |
CN111370404A (zh) * | 2020-04-16 | 2020-07-03 | 上海华虹宏力半导体制造有限公司 | 一种功率半导体器件及其制作方法、沟槽版图结构 |
CN111613617A (zh) * | 2020-06-28 | 2020-09-01 | 上海华虹宏力半导体制造有限公司 | 一种功率半导体器件及其制作方法、沟槽版图结构 |
CN112310069A (zh) * | 2020-09-18 | 2021-02-02 | 上海华虹宏力半导体制造有限公司 | 屏蔽栅沟槽型器件的版图结构及制造方法 |
CN112490140B (zh) * | 2020-11-18 | 2023-08-01 | 长江存储科技有限责任公司 | 一种监测沟道通孔的开封方法 |
CN112133759B (zh) * | 2020-11-25 | 2021-02-05 | 中芯集成电路制造(绍兴)有限公司 | 具有屏蔽栅沟槽结构的半导体器件及其制造方法 |
US11948965B2 (en) * | 2021-04-01 | 2024-04-02 | Omnivision Technologies, Inc. | Uneven-trench pixel cell and fabrication method |
CN113809009A (zh) * | 2021-09-18 | 2021-12-17 | 长江存储科技有限责任公司 | 形成多晶硅栅的方法以及包括该多晶硅栅的半导体器件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006026943A1 (de) * | 2006-06-09 | 2007-12-13 | Infineon Technologies Austria Ag | Mittels Feldeffekt steuerbarer Trench-Transistor mit zwei Steuerelektroden |
US20100123188A1 (en) * | 2008-11-14 | 2010-05-20 | Prasad Venkatraman | Semiconductor device having trench shield electrode structure |
EP2339636A1 (fr) * | 2009-12-28 | 2011-06-29 | STMicroelectronics Srl | Dispositif semi-conducteur de puissance et méthode de fabrication |
US20140027845A1 (en) * | 2012-07-27 | 2014-01-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20140167145A1 (en) * | 2012-12-18 | 2014-06-19 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20160064556A1 (en) * | 2014-08-29 | 2016-03-03 | Freescale Semiconductor, Inc. | Trench gate fet with self-aligned source contact |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4903055B2 (ja) * | 2003-12-30 | 2012-03-21 | フェアチャイルド・セミコンダクター・コーポレーション | パワー半導体デバイスおよびその製造方法 |
DE102005041108B3 (de) * | 2005-08-30 | 2007-05-31 | Infineon Technologies Ag | Verfahren zur Herstellung eines Trench-Transistors und Trench-Transistor |
CN102097378B (zh) * | 2009-12-10 | 2013-12-04 | 力士科技股份有限公司 | 一种沟槽金属氧化物半导体场效应管的制造方法 |
TWI426568B (zh) * | 2010-03-29 | 2014-02-11 | Sinopower Semiconductor Inc | 半導體功率元件與其製作方法 |
US8143126B2 (en) * | 2010-05-10 | 2012-03-27 | Freescale Semiconductor, Inc. | Method for forming a vertical MOS transistor |
CN101866923B (zh) | 2010-05-18 | 2011-12-07 | 苏州硅能半导体科技股份有限公司 | 三层光罩沟槽mos器件及制造方法 |
CN103632963A (zh) * | 2012-08-21 | 2014-03-12 | 深圳市力振半导体有限公司 | 一种制备沟槽栅控半导体功率器件的方法 |
CN103928513B (zh) * | 2013-01-15 | 2017-03-29 | 无锡华润上华半导体有限公司 | 一种沟槽dmos器件及其制作方法 |
CN103236439B (zh) | 2013-04-22 | 2015-06-17 | 无锡新洁能股份有限公司 | 一种新型结构的vdmos器件及其制造方法 |
US9136368B2 (en) * | 2013-10-03 | 2015-09-15 | Texas Instruments Incorporated | Trench gate trench field plate semi-vertical semi-lateral MOSFET |
JP6271440B2 (ja) * | 2014-01-31 | 2018-01-31 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2016
- 2016-08-31 CN CN201610798447.7A patent/CN107785273B/zh active Active
-
2017
- 2017-08-09 EP EP17845167.0A patent/EP3499550B1/fr active Active
- 2017-08-09 JP JP2019511971A patent/JP6761900B2/ja active Active
- 2017-08-09 US US16/329,656 patent/US10868145B2/en active Active
- 2017-08-09 WO PCT/CN2017/096595 patent/WO2018040865A1/fr unknown
-
2020
- 2020-12-14 US US17/121,360 patent/US11532726B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006026943A1 (de) * | 2006-06-09 | 2007-12-13 | Infineon Technologies Austria Ag | Mittels Feldeffekt steuerbarer Trench-Transistor mit zwei Steuerelektroden |
US20100123188A1 (en) * | 2008-11-14 | 2010-05-20 | Prasad Venkatraman | Semiconductor device having trench shield electrode structure |
EP2339636A1 (fr) * | 2009-12-28 | 2011-06-29 | STMicroelectronics Srl | Dispositif semi-conducteur de puissance et méthode de fabrication |
US20140027845A1 (en) * | 2012-07-27 | 2014-01-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20140167145A1 (en) * | 2012-12-18 | 2014-06-19 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20160064556A1 (en) * | 2014-08-29 | 2016-03-03 | Freescale Semiconductor, Inc. | Trench gate fet with self-aligned source contact |
Non-Patent Citations (1)
Title |
---|
See also references of WO2018040865A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN107785273A (zh) | 2018-03-09 |
EP3499550B1 (fr) | 2021-09-29 |
JP6761900B2 (ja) | 2020-09-30 |
JP2019526936A (ja) | 2019-09-19 |
US20210098606A1 (en) | 2021-04-01 |
CN107785273B (zh) | 2020-03-13 |
US11532726B2 (en) | 2022-12-20 |
US20190198644A1 (en) | 2019-06-27 |
EP3499550A1 (fr) | 2019-06-19 |
WO2018040865A1 (fr) | 2018-03-08 |
US10868145B2 (en) | 2020-12-15 |
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