EP3458415A4 - PREPARATION OF IODOSILANES CONTAINING SI-H VIA A HALOGENURE EXCHANGE REACTION - Google Patents

PREPARATION OF IODOSILANES CONTAINING SI-H VIA A HALOGENURE EXCHANGE REACTION Download PDF

Info

Publication number
EP3458415A4
EP3458415A4 EP17800276.2A EP17800276A EP3458415A4 EP 3458415 A4 EP3458415 A4 EP 3458415A4 EP 17800276 A EP17800276 A EP 17800276A EP 3458415 A4 EP3458415 A4 EP 3458415A4
Authority
EP
European Patent Office
Prior art keywords
preparation
exchange reaction
halide exchange
containing iodosilanes
via halide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17800276.2A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3458415A1 (en
Inventor
Cole RITTER
Gennadiy Itov
Manish Khandelwal
Jean-Marc Girard
Glenn KUCHENBEISER
Sean KERRIGAN
Peng Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide SA, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical Air Liquide SA
Publication of EP3458415A1 publication Critical patent/EP3458415A1/en
Publication of EP3458415A4 publication Critical patent/EP3458415A4/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C07F7/121—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20
    • C07F7/123—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20 by reactions involving the formation of Si-halogen linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
EP17800276.2A 2016-05-19 2017-05-19 PREPARATION OF IODOSILANES CONTAINING SI-H VIA A HALOGENURE EXCHANGE REACTION Pending EP3458415A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662338882P 2016-05-19 2016-05-19
PCT/US2017/033620 WO2017201456A1 (en) 2016-05-19 2017-05-19 Preparation of si-h containing iodosilanes via halide exchange reaction

Publications (2)

Publication Number Publication Date
EP3458415A1 EP3458415A1 (en) 2019-03-27
EP3458415A4 true EP3458415A4 (en) 2019-11-27

Family

ID=60326369

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17800276.2A Pending EP3458415A4 (en) 2016-05-19 2017-05-19 PREPARATION OF IODOSILANES CONTAINING SI-H VIA A HALOGENURE EXCHANGE REACTION

Country Status (7)

Country Link
EP (1) EP3458415A4 (zh)
JP (2) JP6543354B2 (zh)
KR (1) KR102038215B1 (zh)
CN (1) CN107864649B (zh)
SG (1) SG11201709441TA (zh)
TW (1) TWI805561B (zh)
WO (1) WO2017201456A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10384944B2 (en) 2016-05-19 2019-08-20 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Preparation of Si—H containing iodosilanes via halide exchange reaction
WO2019212808A1 (en) * 2018-05-01 2019-11-07 Milliken & Company Method for producing halosilane compounds
JP6688513B2 (ja) 2018-10-18 2020-04-28 ヤマナカヒューテック株式会社 ジヨードシランの製造方法
EP3894418B1 (en) * 2018-12-10 2023-09-27 Entegris, Inc. Preparation of triiodosilanes
CN115605432A (zh) * 2020-04-24 2023-01-13 恩特格里斯公司（Us） 制备碘硅烷的方法及由其所得的组合物
US11905174B2 (en) * 2020-10-23 2024-02-20 Entegris, Inc. Method for preparing iodosilanes
KR102331310B1 (ko) * 2020-11-12 2021-12-01 (주)엘케이켐 디아이오도실란의 제조 방법 및 이에 의해 제조된 조성물
CN113548669B (zh) * 2021-09-01 2022-11-11 福建福豆新材料有限公司 一种高纯电子级二碘硅烷的制备装置及其制备方法
JP2023157339A (ja) * 2022-04-14 2023-10-26 ヤマナカヒューテック株式会社 化合物の製造方法
CN116375038A (zh) * 2023-02-23 2023-07-04 安徽博泰电子材料有限公司 一种二碘硅烷的制备方法
CN116081626B (zh) * 2023-03-30 2023-06-27 研峰科技(北京)有限公司 一种二碘硅烷的制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3047995C2 (de) * 1980-12-19 1984-05-10 Degussa Ag, 6000 Frankfurt Verfahren zur Herstellung von (Jodorganyl)-alkoxysilanen
US5997637A (en) * 1993-06-18 1999-12-07 Nippon Oil Co., Ltd. Method of producing a semiconducting material
JPH07252271A (ja) * 1994-03-14 1995-10-03 Shin Etsu Chem Co Ltd ヨードシランの製造方法
JP3895053B2 (ja) * 1998-07-30 2007-03-22 独立行政法人科学技術振興機構 ジハロメチルシラン類の製法
US20060084283A1 (en) * 2004-10-20 2006-04-20 Paranjpe Ajit P Low temperature sin deposition methods
US20060121192A1 (en) 2004-12-02 2006-06-08 Jurcik Benjamin J Liquid precursor refill system
US9034105B2 (en) 2008-01-10 2015-05-19 American Air Liquide, Inc. Solid precursor sublimator
US20160046408A1 (en) 2015-10-27 2016-02-18 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Internally coated vessel for housing a metal halide
US9777373B2 (en) * 2015-12-30 2017-10-03 American Air Liquide, Inc. Amino(iodo)silane precursors for ALD/CVD silicon-containing film applications and methods of using the same
US10106425B2 (en) 2016-05-19 2018-10-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Synthesis methods for halosilanes

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
HASSLER K ET AL: "Synthese und Eigenschaften chlorierter und bromierter Aryltrisilane und Aryltetrasilane", JOURNAL OF ORGANOMETALLIC CHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 538, no. 1-2, 20 June 1997 (1997-06-20), pages 135 - 143, XP004082229, ISSN: 0022-328X, DOI: 10.1016/S0022-328X(96)06893-3 *
KIM SOO ET AL: "Fourier-transform infrared spectroscopic studies of pristine polysilanes as precursor molecules for the solution deposition of amorphous silicon thin-films", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 100, 2012, pages 61 - 64, XP028902547, ISSN: 0927-0248, DOI: 10.1016/J.SOLMAT.2011.04.023 *
LISSEL MANFRED ET AL: "Ein einfaches Verfahren zur Herstellung von Iodotrimethylsilan", SYNTHESIS, vol. 1983, no. 6, 1 January 1983 (1983-01-01), pages 459, XP055595770 *
WANG Z ET AL: "Synthesis of monolithic 3D ordered macroporous carbon/nano-silicon composites by diiodosilane decomposition", CARBON, ELSEVIER, OXFORD, GB, vol. 46, no. 13, 1 November 2008 (2008-11-01), pages 1702 - 1710, XP025469434, ISSN: 0008-6223, [retrieved on 20080724], DOI: 10.1016/J.CARBON.2008.07.015 *

Also Published As

Publication number Publication date
EP3458415A1 (en) 2019-03-27
JP2019189523A (ja) 2019-10-31
TWI805561B (zh) 2023-06-21
WO2017201456A1 (en) 2017-11-23
JP2018519233A (ja) 2018-07-19
WO2017201456A8 (en) 2017-12-28
JP6543354B2 (ja) 2019-07-10
JP7014753B2 (ja) 2022-02-01
KR102038215B1 (ko) 2019-10-29
TW201900659A (zh) 2019-01-01
KR20170141261A (ko) 2017-12-22
CN107864649A (zh) 2018-03-30
SG11201709441TA (en) 2018-05-30
CN107864649B (zh) 2021-07-20

Similar Documents

Publication Publication Date Title
EP3458415A4 (en) PREPARATION OF IODOSILANES CONTAINING SI-H VIA A HALOGENURE EXCHANGE REACTION
EP3491480A4 (en) SECURE EXCHANGE OF CRYPTOGRAPHICALLY SIGNED RECORDS
EP3383447A4 (en) PHOTOACTIVATED PREPARATION OF HYDROGELS
EP3295648A4 (en) SECURE PRIMING TECHNOLOGIES OF VIRTUAL NETWORK FUNCTIONS
EP3389668A4 (en) MIX OF HMO
EP3509581A4 (en) FORMULATIONS OF (R
EP3332774A4 (en) COMPOSITION FOR SOFT CAPSULE COATING
EP3387809A4 (en) SCHEMATA FOR HOMOMORPHE RE-ENLARGEMENT
EP3262029A4 (en) Method for the preparation of metal-organic compounds
EP3494121A4 (en) CONTINUOUS CONNECTIONS
EP3157929A4 (en) Pyrazole compounds as modulators of fshr and uses thereof
EP3691664A4 (en) MANIPULATION OF TRYPTAMINE METABOLISM
EP3500286A4 (en) N-CARBOXYANHYDRIDE-BASED ELAMIPRETIDE SCALE SYNTHESIS
EP3533839A4 (en) HEAT-CONDUCTIVE SILICONE COMPOSITION
EP3280408A4 (en) Process for the preparation of dicycloplatin
EP3711323A4 (en) AUTHORIZATION OF APPLICATIONS FOR DIRECT DISCOVERY
EP3490553A4 (en) USE OF INDOLINON COMPOUNDS
EP3341359A4 (en) PROCESS FOR PREPARING APREMILAST
EP3272346A4 (en) Solid preparation containing colorant
EP3437623A4 (en) GLASS POWDER FOR DENTAL USE
EP3402771A4 (en) METHOD FOR PRODUCING AN OLEF-CONTAINING FLUOR
EP3149011A4 (en) Process of synthesizing diisopropylaminw-disilanes
EP3277701A4 (en) SYNTHESIS OF DESOSAMINES
EP3606966A4 (en) IMPROVED PROCESS FOR THE PREPARATION OF SUGAMMADEX SODIUM
EP3146957A4 (en) Novel use of rose dye compound

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20181219

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RIN1 Information on inventor provided before grant (corrected)

Inventor name: ZHANG, PENG

Inventor name: RITTER, COLE

Inventor name: ITOV, GENNADIY

Inventor name: GIRARD, JEAN-MARC

Inventor name: KUCHENBEISER, GLENN

Inventor name: KERRIGAN, SEAN

Inventor name: KHANDELWAL, MANISH

A4 Supplementary search report drawn up and despatched

Effective date: 20191024

RIC1 Information provided on ipc code assigned before grant

Ipc: C01B 33/107 20060101AFI20191018BHEP

Ipc: C07F 7/12 20060101ALI20191018BHEP

Ipc: C23C 16/455 20060101ALI20191018BHEP

Ipc: C23C 16/40 20060101ALI20191018BHEP

Ipc: C23C 16/30 20060101ALI20191018BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20200609

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

RAP3 Party data changed (applicant data changed or rights of an application transferred)

Owner name: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE