EP3458415A4 - Herstellung von si-h-haltigen iodosilanen über halidaustauschreaktion - Google Patents

Herstellung von si-h-haltigen iodosilanen über halidaustauschreaktion Download PDF

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Publication number
EP3458415A4
EP3458415A4 EP17800276.2A EP17800276A EP3458415A4 EP 3458415 A4 EP3458415 A4 EP 3458415A4 EP 17800276 A EP17800276 A EP 17800276A EP 3458415 A4 EP3458415 A4 EP 3458415A4
Authority
EP
European Patent Office
Prior art keywords
preparation
exchange reaction
halide exchange
containing iodosilanes
via halide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17800276.2A
Other languages
English (en)
French (fr)
Other versions
EP3458415A1 (de
Inventor
Cole RITTER
Gennadiy Itov
Manish Khandelwal
Jean-Marc Girard
Glenn KUCHENBEISER
Sean KERRIGAN
Peng Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide SA, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical Air Liquide SA
Publication of EP3458415A1 publication Critical patent/EP3458415A1/de
Publication of EP3458415A4 publication Critical patent/EP3458415A4/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C07F7/121—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20
    • C07F7/123—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20 by reactions involving the formation of Si-halogen linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
EP17800276.2A 2016-05-19 2017-05-19 Herstellung von si-h-haltigen iodosilanen über halidaustauschreaktion Pending EP3458415A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662338882P 2016-05-19 2016-05-19
PCT/US2017/033620 WO2017201456A1 (en) 2016-05-19 2017-05-19 Preparation of si-h containing iodosilanes via halide exchange reaction

Publications (2)

Publication Number Publication Date
EP3458415A1 EP3458415A1 (de) 2019-03-27
EP3458415A4 true EP3458415A4 (de) 2019-11-27

Family

ID=60326369

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17800276.2A Pending EP3458415A4 (de) 2016-05-19 2017-05-19 Herstellung von si-h-haltigen iodosilanen über halidaustauschreaktion

Country Status (7)

Country Link
EP (1) EP3458415A4 (de)
JP (2) JP6543354B2 (de)
KR (1) KR102038215B1 (de)
CN (1) CN107864649B (de)
SG (1) SG11201709441TA (de)
TW (1) TWI805561B (de)
WO (1) WO2017201456A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10384944B2 (en) 2016-05-19 2019-08-20 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Preparation of Si—H containing iodosilanes via halide exchange reaction
JP7237988B2 (ja) * 2018-05-01 2023-03-13 ミリケン・アンド・カンパニー ハロシラン化合物を生成するための方法
JP6688513B2 (ja) 2018-10-18 2020-04-28 ヤマナカヒューテック株式会社 ジヨードシランの製造方法
CN113195506B (zh) * 2018-12-10 2024-07-30 恩特格里斯公司 三碘硅烷的制备
WO2021217048A1 (en) * 2020-04-24 2021-10-28 Entegris, Inc. Method of preparing iodosilanes and compositions therefrom
WO2022087036A1 (en) * 2020-10-23 2022-04-28 Entegris, Inc. Method for preparing iodosilanes
KR102331310B1 (ko) * 2020-11-12 2021-12-01 (주)엘케이켐 디아이오도실란의 제조 방법 및 이에 의해 제조된 조성물
CN113548669B (zh) * 2021-09-01 2022-11-11 福建福豆新材料有限公司 一种高纯电子级二碘硅烷的制备装置及其制备方法
JP2023157339A (ja) * 2022-04-14 2023-10-26 ヤマナカヒューテック株式会社 化合物の製造方法
CN116375038A (zh) * 2023-02-23 2023-07-04 安徽博泰电子材料有限公司 一种二碘硅烷的制备方法
CN116081626B (zh) * 2023-03-30 2023-06-27 研峰科技(北京)有限公司 一种二碘硅烷的制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
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DE3047995C2 (de) * 1980-12-19 1984-05-10 Degussa Ag, 6000 Frankfurt Verfahren zur Herstellung von (Jodorganyl)-alkoxysilanen
US5997637A (en) * 1993-06-18 1999-12-07 Nippon Oil Co., Ltd. Method of producing a semiconducting material
JPH07252271A (ja) * 1994-03-14 1995-10-03 Shin Etsu Chem Co Ltd ヨードシランの製造方法
JP3895053B2 (ja) * 1998-07-30 2007-03-22 独立行政法人科学技術振興機構 ジハロメチルシラン類の製法
US20060084283A1 (en) * 2004-10-20 2006-04-20 Paranjpe Ajit P Low temperature sin deposition methods
US20060121192A1 (en) 2004-12-02 2006-06-08 Jurcik Benjamin J Liquid precursor refill system
US9034105B2 (en) 2008-01-10 2015-05-19 American Air Liquide, Inc. Solid precursor sublimator
US20160046408A1 (en) 2015-10-27 2016-02-18 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Internally coated vessel for housing a metal halide
US9777373B2 (en) * 2015-12-30 2017-10-03 American Air Liquide, Inc. Amino(iodo)silane precursors for ALD/CVD silicon-containing film applications and methods of using the same
US10106425B2 (en) 2016-05-19 2018-10-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Synthesis methods for halosilanes

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
HASSLER K ET AL: "Synthese und Eigenschaften chlorierter und bromierter Aryltrisilane und Aryltetrasilane", JOURNAL OF ORGANOMETALLIC CHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 538, no. 1-2, 20 June 1997 (1997-06-20), pages 135 - 143, XP004082229, ISSN: 0022-328X, DOI: 10.1016/S0022-328X(96)06893-3 *
KIM SOO ET AL: "Fourier-transform infrared spectroscopic studies of pristine polysilanes as precursor molecules for the solution deposition of amorphous silicon thin-films", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 100, 2012, pages 61 - 64, XP028902547, ISSN: 0927-0248, DOI: 10.1016/J.SOLMAT.2011.04.023 *
LISSEL MANFRED ET AL: "Ein einfaches Verfahren zur Herstellung von Iodotrimethylsilan", SYNTHESIS, vol. 1983, no. 6, 1 January 1983 (1983-01-01), pages 459, XP055595770 *
See also references of WO2017201456A1 *
WANG Z ET AL: "Synthesis of monolithic 3D ordered macroporous carbon/nano-silicon composites by diiodosilane decomposition", CARBON, ELSEVIER, OXFORD, GB, vol. 46, no. 13, 1 November 2008 (2008-11-01), pages 1702 - 1710, XP025469434, ISSN: 0008-6223, [retrieved on 20080724], DOI: 10.1016/J.CARBON.2008.07.015 *

Also Published As

Publication number Publication date
EP3458415A1 (de) 2019-03-27
KR102038215B1 (ko) 2019-10-29
TWI805561B (zh) 2023-06-21
CN107864649A (zh) 2018-03-30
CN107864649B (zh) 2021-07-20
KR20170141261A (ko) 2017-12-22
SG11201709441TA (en) 2018-05-30
JP6543354B2 (ja) 2019-07-10
JP2019189523A (ja) 2019-10-31
WO2017201456A1 (en) 2017-11-23
JP7014753B2 (ja) 2022-02-01
TW201900659A (zh) 2019-01-01
WO2017201456A8 (en) 2017-12-28
JP2018519233A (ja) 2018-07-19

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Inventor name: ZHANG, PENG

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Owner name: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE