SG11201709441TA - Preparation of si-h containing iodosilanes via halide exchange reaction - Google Patents
Preparation of si-h containing iodosilanes via halide exchange reactionInfo
- Publication number
- SG11201709441TA SG11201709441TA SG11201709441TA SG11201709441TA SG11201709441TA SG 11201709441T A SG11201709441T A SG 11201709441TA SG 11201709441T A SG11201709441T A SG 11201709441TA SG 11201709441T A SG11201709441T A SG 11201709441TA SG 11201709441T A SG11201709441T A SG 11201709441TA
- Authority
- SG
- Singapore
- Prior art keywords
- preparation
- exchange reaction
- halide exchange
- containing iodosilanes
- via halide
- Prior art date
Links
- 125000005843 halogen group Chemical group 0.000 title 1
- IDIOJRGTRFRIJL-UHFFFAOYSA-N iodosilane Chemical class I[SiH3] IDIOJRGTRFRIJL-UHFFFAOYSA-N 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
- C07F7/121—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20
- C07F7/123—Preparation or treatment not provided for in C07F7/14, C07F7/16 or C07F7/20 by reactions involving the formation of Si-halogen linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662338882P | 2016-05-19 | 2016-05-19 | |
| PCT/US2017/033620 WO2017201456A1 (en) | 2016-05-19 | 2017-05-19 | Preparation of si-h containing iodosilanes via halide exchange reaction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201709441TA true SG11201709441TA (en) | 2018-05-30 |
Family
ID=60326369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201709441TA SG11201709441TA (en) | 2016-05-19 | 2017-05-19 | Preparation of si-h containing iodosilanes via halide exchange reaction |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP3458415A4 (en) |
| JP (2) | JP6543354B2 (en) |
| KR (1) | KR102038215B1 (en) |
| CN (1) | CN107864649B (en) |
| SG (1) | SG11201709441TA (en) |
| TW (1) | TWI805561B (en) |
| WO (1) | WO2017201456A1 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10384944B2 (en) | 2016-05-19 | 2019-08-20 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Preparation of Si—H containing iodosilanes via halide exchange reaction |
| KR102577557B1 (en) * | 2018-05-01 | 2023-09-11 | 밀리켄 앤드 캄파니 | Method for producing halosilane compounds |
| JP6688513B2 (en) * | 2018-10-18 | 2020-04-28 | ヤマナカヒューテック株式会社 | Method for producing diiodosilane |
| US11203604B2 (en) | 2018-12-10 | 2021-12-21 | Entegris, Inc. | Preparation of triiodosilanes |
| US20210331930A1 (en) * | 2020-04-24 | 2021-10-28 | Entegris, Inc. | Method of preparing iodosilanes and compositions therefrom |
| CN116457310A (en) * | 2020-10-23 | 2023-07-18 | 恩特格里斯公司 | Method for preparing iodosilane |
| KR102331310B1 (en) * | 2020-11-12 | 2021-12-01 | (주)엘케이켐 | Method for preparing diiodosilane and composition prepared thereby |
| CN113548669B (en) * | 2021-09-01 | 2022-11-11 | 福建福豆新材料有限公司 | Preparation device and preparation method of high-purity electronic-grade diiodosilane |
| JP2023157339A (en) * | 2022-04-14 | 2023-10-26 | ヤマナカヒューテック株式会社 | Method for producing compound |
| CN116375038A (en) * | 2023-02-23 | 2023-07-04 | 安徽博泰电子材料有限公司 | Preparation method of diiodosilane |
| CN116081626B (en) * | 2023-03-30 | 2023-06-27 | 研峰科技(北京)有限公司 | Preparation method of diiodosilane |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3047995C2 (en) * | 1980-12-19 | 1984-05-10 | Degussa Ag, 6000 Frankfurt | Process for the preparation of (iodoorganyl) alkoxysilanes |
| US5997637A (en) * | 1993-06-18 | 1999-12-07 | Nippon Oil Co., Ltd. | Method of producing a semiconducting material |
| JPH07252271A (en) * | 1994-03-14 | 1995-10-03 | Shin Etsu Chem Co Ltd | Production of iodosilane |
| JP3895053B2 (en) * | 1998-07-30 | 2007-03-22 | 独立行政法人科学技術振興機構 | Production method of dihalomethylsilanes |
| US20060084283A1 (en) * | 2004-10-20 | 2006-04-20 | Paranjpe Ajit P | Low temperature sin deposition methods |
| US20060121192A1 (en) | 2004-12-02 | 2006-06-08 | Jurcik Benjamin J | Liquid precursor refill system |
| US9034105B2 (en) | 2008-01-10 | 2015-05-19 | American Air Liquide, Inc. | Solid precursor sublimator |
| US20160046408A1 (en) | 2015-10-27 | 2016-02-18 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Internally coated vessel for housing a metal halide |
| US9777373B2 (en) * | 2015-12-30 | 2017-10-03 | American Air Liquide, Inc. | Amino(iodo)silane precursors for ALD/CVD silicon-containing film applications and methods of using the same |
| US10106425B2 (en) | 2016-05-19 | 2018-10-23 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Synthesis methods for halosilanes |
-
2017
- 2017-05-19 EP EP17800276.2A patent/EP3458415A4/en active Pending
- 2017-05-19 KR KR1020177035366A patent/KR102038215B1/en active IP Right Grant
- 2017-05-19 SG SG11201709441TA patent/SG11201709441TA/en unknown
- 2017-05-19 WO PCT/US2017/033620 patent/WO2017201456A1/en active Application Filing
- 2017-05-19 JP JP2017563971A patent/JP6543354B2/en active Active
- 2017-05-19 CN CN201780001969.2A patent/CN107864649B/en active Active
- 2017-11-17 TW TW106139942A patent/TWI805561B/en active
-
2019
- 2019-06-14 JP JP2019110969A patent/JP7014753B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3458415A4 (en) | 2019-11-27 |
| WO2017201456A8 (en) | 2017-12-28 |
| WO2017201456A1 (en) | 2017-11-23 |
| EP3458415A1 (en) | 2019-03-27 |
| JP2018519233A (en) | 2018-07-19 |
| KR102038215B1 (en) | 2019-10-29 |
| TW201900659A (en) | 2019-01-01 |
| JP7014753B2 (en) | 2022-02-01 |
| JP6543354B2 (en) | 2019-07-10 |
| TWI805561B (en) | 2023-06-21 |
| KR20170141261A (en) | 2017-12-22 |
| JP2019189523A (en) | 2019-10-31 |
| CN107864649A (en) | 2018-03-30 |
| CN107864649B (en) | 2021-07-20 |
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