EP3376825B1 - Dispositif de chauffage - Google Patents
Dispositif de chauffage Download PDFInfo
- Publication number
- EP3376825B1 EP3376825B1 EP17190983.1A EP17190983A EP3376825B1 EP 3376825 B1 EP3376825 B1 EP 3376825B1 EP 17190983 A EP17190983 A EP 17190983A EP 3376825 B1 EP3376825 B1 EP 3376825B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- refractive index
- film
- low
- light
- emitting tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 description 18
- 238000007789 sealing Methods 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 description 5
- 239000011888 foil Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/40—Heating elements having the shape of rods or tubes
- H05B3/42—Heating elements having the shape of rods or tubes non-flexible
- H05B3/44—Heating elements having the shape of rods or tubes non-flexible heating conductor arranged within rods or tubes of insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01K—ELECTRIC INCANDESCENT LAMPS
- H01K1/00—Details
- H01K1/28—Envelopes; Vessels
- H01K1/32—Envelopes; Vessels provided with coatings on the walls; Vessels or coatings thereon characterised by the material thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/032—Heaters specially adapted for heating by radiation heating
Definitions
- Embodiments described herein relate to a heater.
- a heater which is used for the purpose of heating an irradiation target object by radiant heat is known.
- the heater is required to have an anti-glare property for use in space heating, cooking, etc., and therefore, a multilayer film having a high visible light blocking effect is formed on an outer surface of a light-emitting tube.
- the multilayer film is composed of a material formed by alternately stacking a high-refractive index film and a low-refractive index film in order to transmit infrared light and block visible light.
- the multilayer film is known to be formed such that the film thickness of the low-refractive index film farthest from the light-emitting tube is made thicker than the film thicknesses of the other low-refractive index films and the film thickness of the high-refractive index film closest to the light-emitting tube is made thinner than the film thicknesses of the other high-refractive index films in order to increase the infrared emission efficiency.
- the film thickness of the high-refractive index film closest to the light-emitting tube is made thin, the anti-glare property is decreased.
- An object of the exemplary embodiments is to provide a heater capable of improving the infrared emission efficiency while improving the anti-glare property.
- a heater according to an embodiment described below includes a light-emitting tube and a multilayer film.
- the multilayer film is formed on an outer surface of the light-emitting tube. Further, the multilayer film is formed by alternately stacking a low-refractive index film and a high-refractive index film, and the film thickness of the low-refractive index film farthest from the light-emitting tube is 2.0 times or more the film thicknesses of the other low-refractive index films, and the film thickness of the high-refractive index film closest to the light-emitting tube is equal to or larger than the film thicknesses of the other high-refractive index films.
- the film thickness of the low-refractive index film farthest from the light-emitting tube is 4.0 times or less the film thicknesses of the other low-refractive index films.
- the film thickness of the low-refractive index film farthest from the light-emitting tube is 2.2 times or more and 3.0 times or less the film thicknesses of the other low-refractive index films.
- the low-refractive index film contains silicon oxide as a main component
- the high-refractive index film contains iron oxide as a main component
- the film thicknesses of the low-refractive index films and the high-refractive index films formed between the high-refractive index film closest to the light-emitting tube and the low-refractive index film farthest from the light-emitting tube are substantially the same among the low-refractive index films and are substantially the same among the high-refractive index films.
- the film thickness of each of the high-refractive index films is thinner than the film thickness of each of the low-refractive index films.
- FIG. 1 is a view showing an outline of the heater according to the embodiment.
- a heater 10 includes a light-emitting tube 2, a first clasp 11, a second clasp 12, a first wiring 14, and a second wiring 15.
- the light-emitting tube 2 is formed of a transparent and colorless material, and is formed in a cylindrical shape.
- the material of the light-emitting tube 2 for example, quartz glass having a high softening point is exemplified. Further, on an outer surface of the light-emitting tube 2, a multilayer film 1 which will be described later with reference to FIG. 2 is formed.
- the heater 10 includes a filament (not shown).
- the filament is disposed inside the light-emitting tube 2.
- One end of the filament is formed extending to a sealing portion (not shown) provided inside the first clasp 11, and is electrically connected to the first wiring 14.
- the other end of the filament is formed extending to a sealing portion (not shown) provided inside the second clasp 12, and is electrically connected to the second wiring 15.
- the filament emits heat and light by applying a voltage thereto from a power supply (not shown) through the first wiring 14, and the second wiring 15.
- the sealing portion provided inside the first clasp 11 and the sealing portion provided inside the second clasp 12 seal both ends of the light-emitting tube 2, respectively, and hermetically seal the inside of the light-emitting tube 2.
- a part of one end of the filament (not shown), a metal foil (not shown) connected to one end of the filament, and a part of an outer lead (not shown) connected to an opposite side to the side where one end of the filament is connected of the metal foil are buried.
- One end of the first wiring 14 is connected to the outer lead buried in the sealing portion provided inside the first clasp 11, and the other end thereof is exposed outside the first clasp 11.
- FIG. 2 is a schematic view of the multilayer film 1 according to the embodiment.
- the light-emitting tube 2 is also shown.
- the multilayer film 1 according to the embodiment is formed on the outer surface of the light-emitting tube 2, and includes a plurality of low-refractive index films 3 and a plurality of high-refractive index films 4.
- the low-refractive index film 3 contains silicon oxide as a main component
- the high-refractive index film 4 contains iron oxide as a main component.
- the multilayer film 1 is formed by a dipping method, a vacuum deposition method, a sputtering method, or the like, and about 10 layers of the low-refractive index film 3 and the high-refractive index film 4 are alternately stacked.
- odd numbered layers starting from the first layer which is directly formed on the surface of the light-emitting tube 2 are formed by the low-refractive index film 3, and even numbered layers starting from the second layer are formed by the high-refractive index film 4.
- Iron oxide which is the main component of the high-refractive index film 4 has a higher anti-glare property than silicon oxide. Therefore, by using iron oxide in the high-refractive index film 4, the anti-glare property of the heater 10 can be improved.
- iron oxide is different from the component of the light-emitting tube 2 as compared with silicon oxide, and therefore, the high-refractive index film 4 is desirably provided on the outer side of the light-emitting tube 2 through the low-refractive index film 3.
- the low-refractive index film 3 is not limited to silicon dioxide, and may have any form as long as the low-refractive index film 3 is silicon oxide such as silicon monoxide (SiO). Further, the low-refractive index film 3 is not limited to silicon oxide, and another metal oxide other than silicon oxide such as magnesium fluoride (MgF 2 ) may be used. Further, the high-refractive index film 4 is not limited to iron oxide, and a metal oxide other than iron oxide such as titanium oxide (TiO 2 ), niobium oxide (Nb 2 O 5 ), or tantalum oxide (Ta 2 O 5 ) may be used.
- the film thicknesses of the low-refractive index films 3 excluding the low-refractive index film 3' farthest from the light-emitting tube 2 are substantially the same as one another
- the film thicknesses of the high-refractive index films 4 excluding the high-refractive index film 4' closest to the light-emitting tube 2 are substantially the same as one another.
- the film thickness of the low-refractive index film 3 is, for example, 1.4 times the film thickness of the high-refractive index film 4. That is, the film thickness of the low-refractive index film 3 is formed thicker than the film thickness of the high-refractive index film 4.
- the film thickness of the low-refractive index film 3 is 80 nm
- the film thickness of the high-refractive index film 4 is 57 nm.
- the film thicknesses are not limited thereto.
- the film thickness of the low-refractive index film 3' farthest from the light-emitting tube 2 is formed thicker than the film thicknesses of the other low-refractive index films 3.
- the high-refractive index film 4' closest to the light-emitting tube 2 is formed to a thickness which is equal to or larger than the film thicknesses of the other high-refractive index films 4.
- the transmittance of infrared light can be improved without decreasing the anti-glare property.
- the film thickness of each layer of the multilayer film 1 can be measured by an SEM (Scanning Electron Microscope) analysis after polishing a cross section of the multilayer film 1.
- SEM Sccanning Electron Microscope
- FIG. 3 is a graph showing an illuminance when using the multilayer film 1 according to the embodiment.
- the horizontal axis represents the ratio of the film thickness of the lowermost high-refractive index film 4' with respect to the high-refractive index film 4 (hereinafter referred to as "the film thickness ratio of the high-refractive index film 4"), and the vertical axis represents the illuminance.
- the illuminance is measured at a position 50 cm away from the heater 10 using a color illuminometer CL-200A manufactured by KONICA MINOLTA, INC.
- an illuminance curve a1 when setting the ratio of the film thickness of the uppermost low-refractive index film 3' with respect to the low-refractive index film 3 (hereinafter referred to as "the film thickness ratio of the low-refractive index film 3") to 2.4 times, an illuminance curve a2 when setting such a film thickness ratio to 3.0 times, an illuminance curve a3 when setting such a film thickness ratio to 1.0 times, and an illuminance curve a4 when setting such a film thickness ratio to 1.5 times are shown.
- the illuminance is most decreased. That is, by setting the film thickness ratio of the high-refractive index film 4 to substantially 1.0 times, the anti-glare property can be most improved.
- the illuminance is gradually increased.
- the illuminance is smaller than when setting such a film thickness ratio smaller than 1.0 times as in the case of 0.5 times, and therefore, a sufficient anti-glare property can be obtained.
- the film thickness of the high-refractive index film 4' closest to the light-emitting tube 2 is equal to or larger than the film thicknesses of the other high-refractive index films 4, a sufficient anti-glare property can be obtained.
- FIG. 4 is a graph showing a transmittance when using the multilayer film 1 according to the embodiment.
- a transmittance curve b1 when setting the film thickness ratio of the low-refractive index film 3 to 2.4 times and setting the film thickness ratio of the high-refractive index film 4 to 1.0 times is shown.
- a transmittance curve b2 when setting the film thickness ratio of the low-refractive index film 3 to 2.4 times and setting the film thickness ratio of the high-refractive index film 4 to 0.5 times and a transmittance curve b3 when setting each of the film thickness ratio of the low-refractive index film 3 and the film thickness ratio of the high-refractive index film 4 to 1.0 times are also shown in FIG. 4 .
- the transmittance curve b1 and the transmittance curve b2 have a similar optical characteristic with respect to the incident light in an infrared region (a wavelength of 780 nm or more).
- the infrared emission efficiency is equal in the case where the film thickness ratio of the high-refractive index film 4 is set to 1.0 times and in the case where such a film thickness ratio is set to 0.5 times.
- the transmittance curve b1 has a higher transmittance with respect to the incident light in an infrared region than the transmittance curve b3. That is, it is found that when the film thickness ratio of the high-refractive index film 4 is fixed to 1.0 times, the infrared emission efficiency is higher in the case where the film thickness ratio of the low-refractive index film 3 is set to 2.4 times than in the case where such a film thickness ratio is set to 1.0 times.
- the infrared irradiation intensity can be improved while improving the anti-glare property.
- FIG. 4 the case where the film thickness ratio of the low-refractive index film 3 is set to 2.4 times is shown, however, even if such a film thickness ratio is set to 2.0 times or more and 4.0 times or less, the same effect can be expected.
- the film thickness of the uppermost low-refractive index film 3' is thicker, it takes longer time to form the multilayer film 1, and therefore, there is a concern that the production efficiency is decreased.
- the film thickness ratio of the low-refractive index film 3 is preferably 2.2 times or more and 3.0 times or less.
- the heater 10 includes the light-emitting tube 2 and the multilayer film 1.
- the multilayer film 1 is formed on the outer surface of the light-emitting tube 2. Further, the multilayer film 1 is formed by alternately stacking the low-refractive index film 3 and the high-refractive index film 4, and the film thickness of the low-refractive index film 3' farthest from the light-emitting tube 2 is 2.0 times or more the film thicknesses of the other low-refractive index films 3, and the film thickness of the high-refractive index film 4' closest to the light-emitting tube 2 is equal to or larger than the film thicknesses of the other high-refractive index films 4. Therefore, in the heater 10 according to the embodiment, the infrared emission efficiency can be improved while improving the anti-glare property.
- the low-refractive index film 3' which is silicon dioxide is formed, however, the configuration is not limited thereto. That is, as such an uppermost layer, zirconium oxide (ZrO 2 ) may be formed. By forming zirconium oxide as such an uppermost layer, ions such as sodium ions (Na + ) can be hardly transmitted therethrough to the light-emitting tube 2 side. That is, by using zirconium oxide as the uppermost layer of the multilayer film 1, the resistance of the heater 10 to an alkaline component such as a salt can be improved.
- zirconium oxide is not limited to the uppermost layer of the multilayer film 1, and may be used in a layer other than the uppermost layer.
Landscapes
- Resistance Heating (AREA)
- Laminated Bodies (AREA)
Claims (5)
- Dispositif de chauffage (10), comprenant :un tube électroluminescent (2) ; etun film multicouche (1) formé sur une surface extérieure du tube électroluminescent, dans lequelle film multicouche est formé en empilant en alternance un film à faible indice de réfraction (3) et un film à haut indice de réfraction (4), etl'épaisseur de film du film à faible indice de réfraction (3') le plus éloigné du tube électroluminescent est de 2,0 fois ou plus l'épaisseur de film des autres films à faible indice de réfraction (3) et l'épaisseur de film du film à haut indice de réfraction (4') le plus proche du tube électroluminescent est égal ou supérieur aux épaisseurs de film des autres films à haut indice de réfraction (4), et caractérisé par l'épaisseur de film du film à faible indice de réfraction (3') le plus éloigné du tube électroluminescent est de 4,0 fois ou moins les épaisseurs de film des autres films à faible indice de réfraction (3).
- Dispositif de chauffage (10) selon la revendication 1, dans lequel
l'épaisseur de film du film à faible indice de réfraction (3') le plus éloigné du tube électroluminescent est de 2,2 fois ou plus et 3,0 fois ou moins les épaisseurs de film des autres films à faible indice de réfraction (3). - Dispositif de chauffage (10) selon la revendication 1 ou 2, dans lequel
le film à haut indice de réfraction (4) contient de l'oxyde de fer en tant que composant principal, et le film à faible indice de réfraction (3) contient de l'oxyde de silicium en tant que composant principal. - Dispositif de chauffage (10) selon une quelconque des revendications 1 à 3, dans lequel
les épaisseurs de film des films à haut indice de réfraction (4) et des films à faible indice de réfraction (3) formés entre le film à haut indice de réfraction (4') le plus proche du tube électroluminescent et le film à faible indice de réfraction (3') le plus éloigné du tube électroluminescent sont substantiellement les mêmes parmi les films à haut indice de réfraction (4) et sont substantiellement les mêmes parmi les films à faible indice de réfraction (3). - Dispositif de chauffage (10) selon la revendication 4, dans lequel
l'épaisseur de film de chacun des films à haut indice de réfraction (4) est plus mince que l'épaisseur de film de chacun des films à faible indice de réfraction (3).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017053076A JP6816587B2 (ja) | 2017-03-17 | 2017-03-17 | ヒータ |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3376825A1 EP3376825A1 (fr) | 2018-09-19 |
EP3376825B1 true EP3376825B1 (fr) | 2020-10-21 |
Family
ID=59955350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP17190983.1A Active EP3376825B1 (fr) | 2017-03-17 | 2017-09-14 | Dispositif de chauffage |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP3376825B1 (fr) |
JP (1) | JP6816587B2 (fr) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5627426A (en) * | 1993-03-22 | 1997-05-06 | General Electric Company | Lamp with IR reflecting film and light-scattering coating |
US5923471A (en) * | 1996-11-26 | 1999-07-13 | Deposition Sciences, Inc. | Optical interference coating capable of withstanding severe temperature environments |
JP2006523366A (ja) * | 2003-03-24 | 2006-10-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ランプ |
JP4678268B2 (ja) * | 2004-09-22 | 2011-04-27 | 岩崎電気株式会社 | 赤外線透過フィルター及びその製造方法 |
JP2010061876A (ja) * | 2008-09-01 | 2010-03-18 | Harison Toshiba Lighting Corp | 管形ヒータ |
JP2010243689A (ja) * | 2009-04-03 | 2010-10-28 | Seiko Epson Corp | 光吸収膜、光学素子および光ピックアップ装置 |
JP2015076334A (ja) * | 2013-10-10 | 2015-04-20 | 東芝ライテック株式会社 | ランプ |
JP2015185442A (ja) * | 2014-03-25 | 2015-10-22 | 東芝ライテック株式会社 | ヒーター |
JP2015222309A (ja) * | 2014-05-22 | 2015-12-10 | スタンレー電気株式会社 | 加熱定着装置 |
JP6287626B2 (ja) * | 2014-06-25 | 2018-03-07 | 東芝ライテック株式会社 | ヒーター |
-
2017
- 2017-03-17 JP JP2017053076A patent/JP6816587B2/ja active Active
- 2017-09-14 EP EP17190983.1A patent/EP3376825B1/fr active Active
Non-Patent Citations (1)
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Also Published As
Publication number | Publication date |
---|---|
JP2018156852A (ja) | 2018-10-04 |
EP3376825A1 (fr) | 2018-09-19 |
JP6816587B2 (ja) | 2021-01-20 |
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