EP3261197B1 - Semiconductor laser light source device, semiconductor laser light source system, and image display device - Google Patents

Semiconductor laser light source device, semiconductor laser light source system, and image display device Download PDF

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Publication number
EP3261197B1
EP3261197B1 EP15882723.8A EP15882723A EP3261197B1 EP 3261197 B1 EP3261197 B1 EP 3261197B1 EP 15882723 A EP15882723 A EP 15882723A EP 3261197 B1 EP3261197 B1 EP 3261197B1
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EP
European Patent Office
Prior art keywords
semiconductor laser
light source
laser light
cooler
semiconductor
Prior art date
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EP15882723.8A
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German (de)
English (en)
French (fr)
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EP3261197A1 (en
EP3261197A4 (en
Inventor
Hideyuki Murai
Tatsuro Hirose
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of EP3261197A4 publication Critical patent/EP3261197A4/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/12—Picture reproducers
    • H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3141—Constructional details thereof
    • H04N9/3144—Cooling systems
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/12—Picture reproducers
    • H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3141—Constructional details thereof
    • H04N9/315—Modulator illumination systems
    • H04N9/3161—Modulator illumination systems using laser light sources
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/12—Picture reproducers
    • H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3141—Constructional details thereof
    • H04N9/315—Modulator illumination systems
    • H04N9/3164—Modulator illumination systems using multiple light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Definitions

  • the present invention relates to a semiconductor laser light source device and a semiconductor laser light source system each including a cooler that cools a semiconductor laser, and to an image display apparatus including the semiconductor laser light source device or the semiconductor laser light source system.
  • solid-state light sources such as LEDs or semiconductor lasers have been widely commercially available or suggested as light sources for large high-brightness projectors intended for large halls or digital cinemas, for small to medium sized projectors intended mainly for a small number conference or presentation, and for projection monitors including, in its casing, a projection optical system and a large screen.
  • the conventional lamps used as the light sources for many projectors and projection monitors are replaced by the solid-state light sources. Accordingly, these devices have advantages of, for example, wider color gamut, instant light capability, low power consumption, and long life.
  • the semiconductor lasers have additional advantages of higher brightness and higher output through superposition of light.
  • high-output semiconductor laser light source devices using a larger number of semiconductor lasers are being developed for use in large high-brightness projectors that project large screens.
  • the semiconductor lasers are more heat-sensitive than the other solid-state light sources such as LEDs, and the electrical-to-optical efficiency thereof is prone to extremely decrease according to increase in temperature of the elements. Furthermore, the continued emission of high-output light at high temperatures expedites degradation of the elements and tends to shorten the life thereof.
  • the semiconductor lasers require a heat dissipation structure with cooling capability higher than those of the other solid-state light sources to obtain a desired amount of light even when the ambient temperature is high.
  • Patent Document 1 discloses a structure including rectangular tine shaped radiating fins placed on a base equipped with a semiconductor laser, and a cooling fan fixed to the radiating fins with a driving substrate having holes interposed therebetween.
  • Patent Document 2 discloses a structure in which a flexible substrate for electrically connecting semiconductor lasers is embedded in a heat transfer component or in a base of a heat sink to dissipate heat from the semiconductor lasers.
  • WO 2010/090766 A1 discloses a laser device comprising a cooler which includes a hollow in which fins are arranged.
  • the radiating fins formed to cool the semiconductor lasers are cooled by the cooling fan through the driving substrate having the holes. Since the driving substrate blocks winds blown by the cooling fan, there have been problems with inefficient cooling of the radiating fins, decrease in the cooling capability, and inefficient cooling of the semiconductor lasers.
  • Patent Document 2 when the flexible substrate that electrically connects the semiconductor laser and the heat sink is placed therebetween, the contact area between the heat sink and the semiconductor laser that is a heat generating source is reduced. Accordingly, increase in thermal resistance reduces the cooling capability, thus posing a problem with inefficient cooling of the semiconductor laser.
  • the present invention has an object of providing a technique that allows a semiconductor laser to be efficiently cooled.
  • a semiconductor laser light source device includes: a semiconductor laser; a cooler that cools the semiconductor laser; and a driving substrate that drives the semiconductor laser, wherein the cooler is placed in contact with a surface of the semiconductor laser, the surface being opposite to a light emitting surface of the semiconductor laser, the driving substrate is placed in contact with a surface of the cooler, the surface being opposite to a surface of the cooler on which the semiconductor laser is placed, and the cooler includes a hollow in which a plurality of fins are arranged.
  • a semiconductor laser light source system includes a plurality of the semiconductor laser light source devices.
  • An image display apparatus includes the semiconductor laser light source device or the semiconductor laser light source system.
  • the thermal resistance between the semiconductor laser and the cooler can be reduced, and the semiconductor laser can be efficiently cooled.
  • Embodiment 1 according to the present invention will be hereinafter described with reference to the drawings.
  • Semiconductor laser light source devices 100, a semiconductor laser light source system 200, and an image display apparatus 300 according to Embodiment 1 will be described in detail.
  • the image display apparatus 300 will be described.
  • FIG. 1 illustrates a structure of the image display apparatus 300 according to Embodiment 1.
  • the image display apparatus 300 includes the semiconductor laser light source devices 100 of three types that are red, blue, and green, an illumination optical system 101, an image display system 102, and a projection optical system 103.
  • the semiconductor laser light source devices 100 are high-output semiconductor laser light source devices each including semiconductor lasers.
  • the illumination optical system 101 combines and converts the red, blue, and green lights emitted by the semiconductor laser light source devices 100 into white light, and emits the white light to the image display system 102.
  • DLP digital light processing
  • LCOS liquid crystal on silicon
  • the image produced by the image display system 102 is enlarged by the projection optical system 103, and displayed on a screen 104.
  • the image display apparatus 300 in FIG. 1 is intended to represent a projector that displays white light by combination with the semiconductor laser light source devices 100 of three types that are red, blue, and green, it may be an image display apparatus that displays white light by combination with a semiconductor laser and a phosphor or by combination with a semiconductor laser and an LED.
  • FIGS. 2A to 2C illustrate an outline structure of the semiconductor laser light source device 100.
  • FIG. 2A is a plan view of the semiconductor laser light source device 100
  • FIG. 2B is a cross-sectional view taken along A-A of FIG. 2A
  • FIG. 2C is a side view of the semiconductor laser light source device 100.
  • FIGS. 3A to 3C illustrate a structure of a semiconductor laser 1.
  • FIG. 3A is a plan view of the semiconductor laser 1
  • FIG. 3B is a cross-sectional view taken along the line B-B of FIG. 3A
  • FIG. 3C is a cross-sectional view taken along the line C-C of FIG. 3A .
  • the semiconductor laser light source device 100 includes the (for example, eight) semiconductor lasers 1, a cooler 2, and a driving substrate 3. First, the semiconductor laser 1 will be described.
  • the semiconductor laser 1 includes a chip 11, a light emitting layer 12, a heat dissipation block 13, a plate 14, terminal pins 15, a package 16, and a glass window 17.
  • the light emitting layer 12 is a layer that emits light, and is formed in the chip 11. Since the chip 11 generates heat, it is placed on the side surface of the heat dissipation block 13 and above the plate 14, and dissipates heat into the heat dissipation block 13.
  • the terminal pins 15 are components that are supplied with power from outside and bring the chip 11 into conduction to allow the chip 11 to emit light.
  • the terminal pins 15 are connected to the chip 11 through a wire 18.
  • the chip 11 Since the performance of the chip 11 is degraded by influence of, for example, dust, the chip 11 is sealed by the package 16 while it is placed above the plate 14 through the heat dissipation block 13. Accordingly, the influence of, for example, dust is eliminated.
  • the glass window 17 is placed on the upper surface of the package 16, and transmits the light emitted from the light emitting layer 12. The emitted light is illustrated by arrows in FIGS. 3A to 3C . The same holds true for the other drawings.
  • the cooler 2 is a component for cooling the semiconductor lasers 1.
  • the semiconductor lasers 1 are arranged in two lines on the upper surface of the cooler 2 so that the heat dissipation blocks 13 on each of which the chip 11 is placed are facing to each other.
  • the cooler 2 is placed in contact with the lower surfaces of the semiconductor lasers 1 (surfaces of the semiconductor lasers 1 that are opposite to light emitting surfaces thereof), and is placed directly below the heat dissipation blocks 13.
  • the driving substrate 3 is a substrate equipped with a driving circuit for driving the semiconductor lasers 1.
  • the driving substrate 3 is placed in contact with the lower surface of the cooler 2 (surface opposite to a surface on which the semiconductor lasers 1 are arranged).
  • the cooler 2 includes a hollow 2a in which fins 7 are arranged, and through holes 2b into which the terminal pins 15 are inserted.
  • the hollow 2a is formed at the center of the cooler 2 in its width direction along the longitudinal direction and placed below the heat dissipation blocks 13, and the fins 7 are arranged below the heat dissipation blocks 13.
  • the cooler 2 functions as a liquid cooling device, by causing, for example, water to flow through the cooler 2 using the fins 7 as a channel.
  • the channel is illustrated by open arrows in FIGS. 2A to 2C . The same holds true for the other drawings.
  • the through holes 2b are formed in respective positions of the terminal pins 15 of the semiconductor lasers 1. Although not illustrated, through holes into which the terminal pins 15 are inserted are also formed in the driving substrate 3.
  • FIG. 4 illustrates an outline structure of the semiconductor laser light source system 200.
  • the semiconductor laser light source system 200 includes the (for example, three) semiconductor laser light source devices 100 horizontally arranged.
  • FIG. 4 illustrates the structure in which each of the semiconductor laser light source devices 100 includes the cooler 2, the semiconductor lasers 1 of the three semiconductor laser light source devices 100 may be placed on the one cooler 2.
  • the image display apparatus 300 in FIG. 1 includes the three semiconductor laser light source devices 100, it may include the three semiconductor laser light source systems 200 instead.
  • the cooler 2 is placed in contact with the surfaces of the semiconductor lasers 1 that are opposite to the light emitting surfaces thereof, and the driving substrate 3 is placed in contact with the surface of the cooler 2 that is opposite to the surface on which the semiconductor lasers 1 are arranged.
  • the semiconductor lasers 1 and the cooler 2 are in direct contact with each other, the thermal resistance between the semiconductor lasers 1 and the cooler 2 can be reduced, and the semiconductor lasers 1 can be efficiently cooled. With efficient cooling of the semiconductor lasers 1, not only the semiconductor lasers 1 but also the semiconductor laser light source devices 100 can be used for a longer period of time.
  • the semiconductor laser light source system 200 includes the semiconductor laser light source devices 100, it can produce higher output than that by the semiconductor laser light source device 100 alone.
  • the image display apparatus 300 since the image display apparatus 300 includes the semiconductor laser light source devices 100, it can efficiently cool the semiconductor lasers 1. Alternatively, when the image display apparatus 300 includes the semiconductor laser light source system 200, besides the advantage above, it can produce an advantage of higher output than that when it includes the semiconductor laser light source devices 100.
  • FIGS. 5A to 5C illustrate an outline structure of the semiconductor laser light source device 110 according to Embodiment 2.
  • FIG. 5A is a plan view of the semiconductor laser light source device 110
  • FIG. 5B is a cross-sectional view taken along E-E of FIG. 5A
  • FIG. 5C is a cross-sectional view taken along F-F of the semiconductor laser light source device 110.
  • FIGS. 6A to 6C illustrate a structure of a semiconductor element 4.
  • FIG. 6A is a plan view of the semiconductor element 4
  • FIG. 6B is a cross-sectional view taken along G-G of FIG. 6A
  • FIG. 6C is a cross-sectional view taken along H-H of FIG. 6A .
  • the same reference numerals as those according to Embodiment 1 will be assigned to the same constituent elements and the description thereof will be omitted in Embodiment 2.
  • the semiconductor laser light source device 110 includes the semiconductor elements 4, the cooler 2, and the driving substrate 3.
  • the semiconductor element 4 is a large semiconductor element in which the (for example, two) chips 11 are placed on the respective heat dissipation blocks 13.
  • the semiconductor element 4 includes the (for example, two) chips 11, the (for example, fourteen) light emitting layers 12, the (for example, two) heat dissipation blocks 13, the plate 14, the terminal pins 15, the package 16, and the glass window 17.
  • the semiconductor elements 4 are arranged on the upper surface of the cooler 2, and the two heat dissipation blocks 13 in each of the semiconductor elements 4 are arranged to face to each other.
  • the seven light emitting layers 12 are arranged per the chip 11.
  • the two heat dissipation blocks 13 in each of the semiconductor elements 4 are arranged so that the seven light emitting layers 12 arranged in one of the two heat dissipation blocks 13 face to the seven light emitting layers 12 arranged in the other of the heat dissipation blocks 13.
  • the arrangement direction of the light emitting layers 12 is parallel to the width direction of the cooler 2.
  • the arrangement direction of the two semiconductor elements 4 is vertical to the arrangement direction of the light emitting layers 12.
  • the channel of the fins 7 is parallel to the longitudinal direction of the cooler 2, that is, the arrangement direction of the two semiconductor elements 4.
  • the chips 11 of each of the semiconductor elements 4 include the light emitting layers 12, they are larger than those of the semiconductor lasers 1 according to Embodiment 1. Furthermore, the heat dissipation blocks 13 for cooling the chips 11 and the plates 14 are similarly larger. The cooler 2 is placed directly below the heat dissipation blocks 13 to be in contact with the semiconductor elements 4.
  • the terminal pins 15 are arranged outside of the heat dissipation blocks 13. As a result, the two heat dissipation blocks 13 can be closely placed. Furthermore, with the terminal pins 15 placed outside of the heat dissipation blocks 13, the cooler 2 can be placed directly below the heat dissipation blocks 13 to be in contact with the semiconductor elements 4 similarly as in the Embodiment 1. As a result, since the thermal resistance between the heat dissipation blocks 13 and the cooler 2 can be reduced, the semiconductor elements 4 can be efficiently cooled.
  • the number of the terminal pins 15 in the semiconductor laser light source device 110 can be reduced more than that of the semiconductor laser 1 according to Embodiment 1 by including the semiconductor elements 4 in each of which the chips 11 including the light emitting layers 12 are placed, a heat dissipation area of the semiconductor laser light source device 110 can be relatively increased. Accordingly, the semiconductor elements 4 can be efficiently cooled.
  • FIGS. 7A to 7C illustrate another outline structure of the semiconductor laser light source device according to Embodiment 2.
  • FIG. 7A is a plan view of a semiconductor laser light source device 120
  • FIG. 7B is a cross-sectional view taken along the line I-I of FIG. 7A
  • FIG. 7C is a cross-sectional view taken along the line J-J of FIG. 7A .
  • the arrangement direction of the two semiconductor elements 4 is vertical to the arrangement direction of the light emitting layers 12 in the structure of FIGS. 5A to 5C .
  • one channel can be formed per the semiconductor element 4.
  • the arrangement direction of the two semiconductor elements 4 is parallel to the arrangement direction of the light emitting layers 12 in the structure of FIGS. 7A to 7C .
  • the semiconductor elements 4 are arranged so that the arrangement direction of the seven light emitting layers 12 is parallel to the longitudinal direction of the cooler 2.
  • the channel of the fins 7 is formed in parallel with the width direction of the cooler 2 and does not pass through the semiconductor elements 4, an advantage that each temperature of the semiconductor elements 4 can be controlled is obtained.
  • FIG. 8 illustrates an outline structure of the semiconductor laser light source system 201.
  • the semiconductor laser light source system 201 includes the (for example, three) semiconductor laser light source devices 110 horizontally arranged.
  • FIG. 8 illustrates the structure in which each of the semiconductor laser light source devices 110 includes the cooler 2, the semiconductor elements 4 of the three semiconductor laser light source devices 110 may be placed on the one cooler 2.
  • the semiconductor laser light source system 201 may include the semiconductor laser light source devices 120 horizontally arranged instead of the semiconductor laser light source devices 110. Furthermore, although the image display apparatus 300 in FIG. 1 includes the three semiconductor laser light source devices 100, it may include the three semiconductor laser light source systems 201 instead.
  • the semiconductor laser is the semiconductor element 4 in which the chips 11 are arranged on the respective heat dissipation blocks 13, and the cooler 2 is placed directly below the heat dissipation blocks 13 to be in contact with the semiconductor elements 4.
  • the contact area between the cooler 2 and the semiconductor elements 4 can be increased, and the semiconductor elements 4 can be more efficiently cooled.
  • the semiconductor laser light source devices 110 and 120 can be downsized.
  • the semiconductor laser light source system 201 includes the semiconductor laser light source devices 110 or 120, it can produce higher output than that by the semiconductor laser light source device 110 or 120 alone.
  • the image display apparatus 300 that is higher in reliability and smaller can be obtained.
  • FIGS. 9A to 9C illustrate an outline structure of the semiconductor laser light source device 130 according to Example Embodiment 3.
  • FIG. 9A is a plan view of the semiconductor laser light source device 130
  • FIG. 9B is a cross-sectional view taken along the line K-K of FIG. 9A
  • FIG. 9C is a side view of the semiconductor laser light source device 130.
  • the same reference numerals as those according to Embodiments 1 and 2 will be assigned to the same constituent elements and the description thereof will be omitted in Example 3.
  • each of the cooler 2 and the driving substrate 3 is placed in contact with the surface of the semiconductor laser 1 that is opposite to the light emitting surface thereof in Example 3.
  • the semiconductor lasers 1 are arranged in two lines so that the heat dissipation blocks 13 are facing to each other.
  • the cooler 2 is formed in a protruding shape so that its center in the width direction is higher than the ends and that the upper surface at the center in the width direction is placed in contact with inner portions of the lower surfaces of the plates 14 of the semiconductor lasers 1.
  • the driving substrate 3 is divided into two which are placed in contact with respective outside portions of the lower surfaces of the plates 14.
  • the pair of the driving substrates 3 is placed above both ends of the cooler 2 in the width direction, and is not in contact with the cooler 2.
  • the terminal pins 15 are arranged to protrude downward from pairs of the driving substrates 3. In other words, the terminal pins 15 are arranged at both ends of the semiconductor laser light source device 130 in the width direction, and the cooler 2 is arranged between the terminal pins 15 arranged at both ends of the semiconductor laser light source device 130 in the width direction.
  • the cooler 2 in Example 3 differs from that in Embodiment 1 in that it include neither the hollow 2a nor the through holes 2b and the fins 7 are arranged on the lower surface of the cooler 2. Furthermore, a fan 8 is placed on the back of the fins 7.
  • FIGS. 10A to 10C illustrate another outline structure of the semiconductor laser light source device according to Example 3.
  • FIG. 10A is a plan view of a semiconductor laser light source device 140
  • FIG. 10B is a cross-sectional view taken along L-L of FIG. 10A
  • FIG. 10C is a side view of the semiconductor laser light source device 140.
  • the semiconductor lasers 1 are arranged in two lines so that the chips 11 including the light emitting layer 12 are facing to each other.
  • the terminal pins 15 are arranged at the center of the semiconductor laser light source device 140 in the width direction.
  • the driving substrate 3 is placed at the center of the semiconductor laser light source device 140 in the width direction, and both ends of the upper surface of the driving substrate 3 in the width direction are placed in contact with inner portions of the lower surfaces of the plates 14 of the semiconductor lasers 1.
  • the cooler 2 is formed in a depressed shape so that its center in the width direction is lower than the ends and that both ends of the upper surface in the width direction are placed in contact with respective outside portions of the lower surfaces of the plates 14 of the semiconductor lasers 1.
  • FIGS. 11A to 11C illustrate another outline structure of the semiconductor laser light source device according to Example 3.
  • FIG. 11A is a plan view of a semiconductor laser light source device 150
  • FIG. 11B is a cross-sectional view taken along M-M of FIG. 11A
  • FIG. 11C is a cross-sectional view taken along N-N of FIG. 11A .
  • the semiconductor laser light source device 150 includes the semiconductor elements 4 each including the terminal pins 15 placed outside of the heat dissipation block 13, and the cooler 2 between the terminal pins 15.
  • the semiconductor laser light source device 150 is an example obtained by arranging the semiconductor elements 4 instead of the semiconductor lasers 1 in the semiconductor laser light source device 130 illustrated in FIGS. 9A to 9C .
  • the cooler 2 is formed in a protruding shape so that its center in the width direction is higher than the ends and that the upper surface at the center in the width direction is placed in contact with the center portions of the lower surfaces of the plates 14 of the semiconductor elements 4.
  • the driving substrate 3 is divided into two which are placed in contact with respective ends of the lower surfaces of the plates 14. The pair of the driving substrates 3 is placed above both ends of the cooler 2 in the width direction, and is not in contact with the cooler 2.
  • FIGS. 12A to 12C illustrate the other outline structure of the semiconductor laser light source device according to Example 3.
  • FIG. 12A is a plan view of a semiconductor laser light source device 160
  • FIG. 12B is a cross-sectional view taken along O-O of FIG. 12A
  • FIG. 12C is a cross-sectional view taken along P-P of FIG. 12A .
  • the semiconductor laser light source device 160 includes the semiconductor elements 4 each including the terminal pin 15 placed at one of the outside portions of the heat dissipation block 13, the cooler 2 directly below the heat dissipation block 13, and the driving substrate 3 outside of the terminal pin 15.
  • the cooler 2 is formed in a shape such that its center in the width direction and one of the ends are higher than the other end and that the upper surface of the center portion in the width direction and the one end is placed in contact with the lower surface of the center portion and one of the ends of each of the plates 14 of the semiconductor elements 4.
  • the driving substrate 3 is placed in contact with the lower surface of the other end of each of the plates 14.
  • the driving substrate 3 is placed above the other end of the cooler 2 in the width direction, and is not in contact with the cooler 2.
  • each of the cooler 2 and the driving substrate 3 is placed in contact with the surfaces opposite to the light emitting surfaces of the semiconductor lasers 1 or the semiconductor elements 4.
  • the cooler 2 since the cooler 2 is in direct contact with the semiconductor lasers 1 or the semiconductor elements 4, the thermal resistance between the cooler 2 and the semiconductor lasers 1 or the semiconductor elements 4 can be reduced, and the semiconductor lasers 1 or the semiconductor elements 4 can be efficiently cooled.
  • Example 3 describes the forced-air cooler 2 including the fan 8, the liquid cooling device as according to Embodiments 1 and 2 can be placed instead of the forced-air cooler 2.
  • the semiconductor laser light source devices according to Example 3 can be used in a semiconductor laser light source system and an image display apparatus, similarly as Embodiments 1 and 2.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Projection Apparatus (AREA)
  • Semiconductor Lasers (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
EP15882723.8A 2015-02-16 2015-11-27 Semiconductor laser light source device, semiconductor laser light source system, and image display device Active EP3261197B1 (en)

Applications Claiming Priority (2)

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JP2015027218 2015-02-16
PCT/JP2015/083458 WO2016132622A1 (ja) 2015-02-16 2015-11-27 半導体レーザ光源装置、半導体レーザ光源システムおよび映像表示装置

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CN110637362B (zh) * 2017-05-24 2023-06-02 三菱电机株式会社 半导体封装件
JP7014645B2 (ja) * 2018-03-06 2022-02-01 シャープ株式会社 半導体発光装置
JP6667149B1 (ja) * 2019-02-06 2020-03-18 ウシオ電機株式会社 半導体レーザ光源装置

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
US5900967A (en) * 1996-12-12 1999-05-04 Trw Inc. Laser diode mounting technique to evenly deposit energy
JP2001326411A (ja) 2000-05-12 2001-11-22 Hitachi Koki Co Ltd 半導体レーザ装置
JP2003188456A (ja) * 2001-12-19 2003-07-04 Hitachi Ltd 光電子装置
JP2004128044A (ja) * 2002-09-30 2004-04-22 Toshiba Corp 半導体レーザ装置
JP4662526B2 (ja) 2003-07-29 2011-03-30 セイコーインスツル株式会社 レーザダイオードモジュール
US20060097385A1 (en) * 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
JP4929612B2 (ja) * 2005-04-12 2012-05-09 ソニー株式会社 半導体レーザ装置及びヒートシンク
JP2007127398A (ja) * 2005-10-05 2007-05-24 Seiko Epson Corp 熱交換器、熱交換器の製造方法、液冷システム、光源装置、プロジェクタ、電子デバイスユニット、電子機器
JP5435854B2 (ja) * 2007-10-13 2014-03-05 日亜化学工業株式会社 半導体発光装置
EP2256880B1 (en) * 2008-03-18 2014-05-14 Mitsubishi Electric Corporation Laser light source module
WO2010090766A1 (en) * 2009-02-09 2010-08-12 Jan Vetrovec Heat transfer device
JP5500339B2 (ja) 2009-09-29 2014-05-21 カシオ計算機株式会社 光源装置及びプロジェクタ
US8018980B2 (en) * 2010-01-25 2011-09-13 Lawrence Livermore National Security, Llc Laser diode package with enhanced cooling
CN102576977B (zh) * 2010-01-27 2014-06-18 三菱电机株式会社 半导体激光器模块
CN102237632A (zh) * 2010-04-26 2011-11-09 无锡亮源激光技术有限公司 户外用半导体激光模块
CN101854027A (zh) * 2010-04-30 2010-10-06 西安炬光科技有限公司 一种用于半导体激光器的液体制冷器
JP5910508B2 (ja) * 2011-01-07 2016-04-27 日本電気株式会社 レーザ光源モジュール
CA2855913C (en) * 2011-11-16 2016-11-29 Mitsubishi Electric Corporation Semiconductor laser excitation solid-state laser
JP2013149667A (ja) * 2012-01-17 2013-08-01 Sumitomo Electric Device Innovations Inc 光モジュールおよび光送信器
JP2014003062A (ja) * 2012-06-15 2014-01-09 Mitsubishi Electric Corp 光半導体装置
JP2014138148A (ja) * 2013-01-18 2014-07-28 Hitachi Media Electoronics Co Ltd 半導体レーザ、半導体レーザアレイおよび画像表示装置
US20140270731A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Thermal management apparatus for solid state light source arrays

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CN107210582A (zh) 2017-09-26
EP3261197A1 (en) 2017-12-27
JPWO2016132622A1 (ja) 2017-06-08
JP6246414B2 (ja) 2017-12-13
CN107210582B (zh) 2020-04-03
US20170353003A1 (en) 2017-12-07
US9899795B2 (en) 2018-02-20
CA2979520C (en) 2020-12-01
WO2016132622A1 (ja) 2016-08-25
CA2979520A1 (en) 2016-08-25
EP3261197A4 (en) 2018-11-21

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