EP3243217A4 - Halbleiterbgehäuse und verfahren zur herstellung davon - Google Patents

Halbleiterbgehäuse und verfahren zur herstellung davon Download PDF

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Publication number
EP3243217A4
EP3243217A4 EP16735133.7A EP16735133A EP3243217A4 EP 3243217 A4 EP3243217 A4 EP 3243217A4 EP 16735133 A EP16735133 A EP 16735133A EP 3243217 A4 EP3243217 A4 EP 3243217A4
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EP
European Patent Office
Prior art keywords
manufacturing
same
semiconductor package
package
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP16735133.7A
Other languages
English (en)
French (fr)
Other versions
EP3243217A1 (de
Inventor
O-Hyun Beak
Keon Kuk
Young-Chul Ko
Woon-Bae Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from PCT/KR2016/000013 external-priority patent/WO2016111512A1/en
Publication of EP3243217A1 publication Critical patent/EP3243217A1/de
Publication of EP3243217A4 publication Critical patent/EP3243217A4/de
Pending legal-status Critical Current

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    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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    • H01L23/293—Organic, e.g. plastic
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    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
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    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA

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EP16735133.7A 2015-01-09 2016-01-04 Halbleiterbgehäuse und verfahren zur herstellung davon Pending EP3243217A4 (de)

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KR102028027B1 (ko) * 2017-03-14 2019-10-04 (주)잉크테크 반도체 칩의 전자파 차폐막 형성 장치 및 방법
KR102609138B1 (ko) 2019-04-29 2023-12-05 삼성전기주식회사 인쇄회로기판 어셈블리
CN110267431B (zh) * 2019-06-18 2021-11-09 青岛歌尔微电子研究院有限公司 一种电路单元封装结构
TWI744869B (zh) * 2020-04-20 2021-11-01 力成科技股份有限公司 封裝結構及其製造方法

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